SSM452 [SECOS]
P-Channel Enhancement Mode Power MOSFET; P沟道增强型功率MOSFET
| 型号： | SSM452 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM452 provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
FEATURES
SOT-223
Simple Drive Requirement
Lower On-resistance
Fast Switching
A
M
4
Top View
C B
1
2
3
K
F
L
E
MARKING
D
G
H
J
Drain
Millimeter
Millimeter
REF.
REF.
Gate
Min.
6.20
6.70
3.30
1.42
4.50
0.60
Max.
6.70
7.30
3.70
1.90
4.70
0.82
Min.
-
-
0.25
-
Max.
0.10
-
0.35
-
A
B
C
D
E
F
G
H
J
K
L
Source
2.30 REF.
M
2.90
3.10
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
Gate – Source Voltage
SYMBOL
VDS
RATING
UNIT
-30
±20
-6.0
-4.8
-20
V
VGS
V
TA = 25°C
TA = 70°C
A
A
Continuous Drain Current 3
ID
Pulsed Drain Current 1
Total Power Dissipation
Linear Derating Factor
IDM
PD
A
2.7
W
0.02
W / °C
Operating Junction & Storage Temperature
Range
TJ, TSTG
-55 ~ 150
°C
THERMAL DATA
Maximum Junction–Ambient 3
RθJA
45
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A
Page 1 of 4
SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN
TYP MAX UNIT TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage
BVDSS
-30
-
-
V
VGS= 0V, ID = -250uA
Reference to 25°C,
ID= -1mA
△BVDSS / △TJ
-
-0.02
-
V / °C
Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
(TJ= 25°C)
VGS(TH)
gFS
-1.0
-
10
-
-3.0
-
V
S
VDS= VGS, ID = -250uA
VDS= -10V, ID= -5.3A
VGS= ±20V
-
-
IGSS
±100
nA
-
-
-
-
-1
VDS= -30V, VGS=0V
VDS= -24V, VGS=0V
IDSS
μA
Drain-Source Leakage Current
(TJ= 70°C)
-25
-
-
-
-
-
-
-
-
-
-
-
-
45
75
55
VGS= -10V, ID= -5.3A
VGS= -4.5V, ID= -4.2A
Drain-Source On Resistance
RDS(ON)
mΩ
100
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time 2
Rise Time
Qg
Qgs
9.2
2.8
5.2
11
16
VGS= -4.5V
-
nC
VDS= -24V
ID= -5.3A
Qgd
-
Td(ON)
Tr
Td(OFF)
Tf
-
VDS= -15V
8
-
VGS= -10V
ID= -1A
nS
pF
Turn-off Delay Time
Fall Time
25
-
RG= 6Ω, RD= 15Ω
17
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
507
222
158
912
VDS= -15V
-
-
VGS= 0V
f= 1MHz
SOURCE-DRAIN DIODE
Forward On Voltage 2
VSD
Trr
-
-
-
-
-1.2
V
VGS= 0V, IS= -2.3A
VGS= 0V, IS= -5.3A,
dl/dt= 100A/μs
Reverse Recovery Time
Reverse Recovery Charge
29
20
-
-
nS
nC
Qrr
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%
3. Surface mounted on 1 in2 copper pad of FR4 board; 120°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A
Page 2 of 4
SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A
Page 3 of 4
SSM452
-6 A, -30V, RDS(ON) 55mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A
Page 4 of 4
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