SSM9973 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SSM9973 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9973
3.9A, 60V,RDS(ON) 80m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
S OT-223
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Description
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The MMS9973 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.
G
D
S
Features
D
* Simple Drive Requirement
* Low Gate Charge
G
S
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
A
VDS
60
±20
3.9
2.5
20
VGS
ID@TA=25 o
ID@TA=70o
IDM
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current 1
C
C
A
A
Total Power Dissipation
PD@TA=25 o
C
2.7
W
0.02
W/oC
oC
Linear Derating Factor
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
Rthj-a
45
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSM9973
Ω
3.9A, 60V,RDS(ON) 80m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=250uA
60
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25oC,ID=1mA
VDS=VGS, ID=250uA
V/ o
C
_
BVDS/ Tj
0.06
_
V
VGS(th)
1.0
_
3.0
_
_
ꢀ
ꢀ
VGS= 20V
100
IGSS
IDSS
Gate-Source Leakage Current
nA
uA
uA
o
_
VDS=60V,VGS=0
VDS=48V,VGS=0
C
1
Drain-Source Leakage Current (Tj=25 )
o
C
_
_
_
_
_
Drain-Source Leakage Current (Tj=70 )
25
VGS=10V, ID=3.9A
VGS=4.5V, ID=2A
80
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
100
Total Gate Charge2
13
_
Qg
8
2
4
8
4
ID=3.9A
_
_
VDS=48V
VGS=4.5V
nC
Gate-Source Charge
Qgs
_
_
Gate-Drain ("Miller") Charge
Qgd
Td(ON)
Tr
Turn-on Delay Time 2
Rise Time
_
_
VDD=30V
ID=1A
_
_
_
VGS=10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
20
6
Ω
RD=30
_
_
_
_
T
f
1120
_
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
700
80
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
pF
S
_
_
50
_
VDS=10V, ID=3.9A
Gfs
Forward Transconductance
3.5
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VDS
IS=3.9A, VGS=0V.
1.2
_
_
_
28
35
ns
Reverse Recovery Time
Reverse Recovery Charge2
Trr
Is=3.9A, VGS=0V
dl/dt=100A/us
_
nC
Qrr
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSM9973
Ω
3.9A, 60V,RDS(ON) 80m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
SSM9973
Ω
3.9A, 60V,RDS(ON) 80m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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