SSM9974GP [SSC]
N-channel Enhancement-mode Power MOSFET; N沟道增强模式功率MOSFET
| 型号： | SSM9974GP |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-channel Enhancement-mode Power MOSFET |
| 文件： | 总6页 (文件大小：674K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9974GP,S
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
DESCRIPTION
The SSM9974 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
BVDSS
RDS(ON)
ID
60V
12mW
72A
The SSM9974GS is in a TO-263 package, which is
widely used for commercial and industrial surface-mount
applications.
Pb-free; RoHS-compliant TO-220
and TO-263 (D2PAK)
The through-hole version, the SSM9974GP in TO-220,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
G
G
D
D
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
S
S
TO-220 (suffix P)
TO-263 (suffix S)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
60
Units
Drain-source voltage
Gate-source voltage
V
V
VGS
±20
72
Continuous drain current, T = 25°C
ID
A
C
T = 100°C
46
A
C
IDM
PD
Pulsed drain current1
300
104
0.8
A
Total power dissipation, T = 25°C
W
C
Linear derating factor
W/°C
TSTG
TJ
Storage temperature range
-55 to 150
-55 to 150
°C
°C
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
°C/W
°C/W
R
ΘJC
ΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
1.2
62
R
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
5/12/2006 Rev.3.1
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SSM9974GP,S
(at Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-source breakdown voltage
60
-
-
0.07
-
-
-
V
∆BVDSS/∆Tj
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
V/°C
mΩ
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=45A
-
12
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
mΩ
V
VGS(th)
gfs
Gate threshold voltage
-
3
Forward transconductance
Drain-source leakage current
50
-
-
S
IDSS
V
uA
DS=60V, VGS=0V
10
VDS=48V ,VGS=0V, Tj = 150°C
VGS=±20V
ID=30A
-
100
uA
nA
nC
nC
nC
ns
IGSS
Qg
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
-
±100
43
8
69
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=4.5V
31
14
48
42
67
-
VDS=30V
-
ns
ID=30A
-
ns
td(off)
tf
Turn-off delay time
Fall time
RG=3.3Ω , VGS=10V
RD=1Ω
-
-
ns
pF
pF
pF
Ciss
Coss
Crss
Rg
Input capacitance
VGS=0V
3180 5100
Output capacitance
Reverse transfer capacitance
Gate Resistance
VDS=25V
495
460
1
-
-
f=1.0MHz
f=1.0MHz
1.5
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward voltage 2
Test Conditions
Min. Typ. Max. Units
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
ns
nC
trr
Reverse-recovery time
45
40
-
-
Qrr
Reverse-recovery charge
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
5/12/2006 Rev.3.1
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SSM9974GP,S
250
200
150
100
50
125
100
75
50
25
0
10V
7.0V
10V
7.0V
5.0V
4.5V
T C =25 o C
T C = 150 o C
5.0V
4.5V
V G =3.0V
V
G =3.0V
0
0
2
4
6
8
150
150
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.0
I D = 30 A
C =25 o C
I D =45A
T
V
G =10V
1.6
1.2
0.8
0.4
16
12
8
2
4
6
8
10
-50
0
50
100
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
30
20
10
0
1.8
1.2
0.6
0.0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
5/12/2006 Rev.3.1
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SSM9974GP,S
f=1.0MHz
16
12
8
10000
1000
100
I D = 35 A
V DS =48V
V DS =38V
V DS =30V
C iss
C oss
C rss
4
0
0
20
40
60
80
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
t
0.02
T
10ms
T C =25 o C
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
100ms
DC
Single Pulse
1
0.01
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
125
100
75
50
25
0
VG
V
DS =5V
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/12/2006 Rev.3.1
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SSM9974GP,S
PHYSICAL DIMENSIONS - TO-220
E
A
Millimeters
SYMBOLS
MIN
4.25
0.65
1.15
0.40
1.00
NOM
4.48
0.80
1.38
0.50
1.20
MAX
4.70
0.90
1.60
0.60
1.40
φ
L1
L2
L5
A
b
c1
b1
c
c1
E
9.70 10.00 10.40
---- 2.54 ----
12.70 13.60 14.50
e
D
L4
L
L1
L2
L3
L4
L5
φ
2.60
1.00
2.6
2.80
1.40
3.10
3.00
1.80
3.6
b1
L3
14.70 15.50
16
6.30
3.50
8.40
6.50
3.60
8.90
6.70
3.70
9.40
L
D
c
b
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
e
PART MARKING - TO-220 and TO-263
PART NUMBER: 9974GP or 9974GS
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
YWWSSS
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
TO-263: 800 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-220: 1000pcs in tubes packed inside a moisture barrier bag (MBB).
5/12/2006 Rev.3.1
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PHYSICAL DIMENSIONS - TO-263
E
Millimeters
SYMBOLS
MIN
NOM MAX
4.75 5.20
0.15 0.30
2.45 2.70
0.90 1.10
1.27 1.47
0.45 0.60
1.30 1.45
8.90 9.40
A
A1
A2
b
4.25
0.00
2.20
0.70
1.07
0.30
1.15
8.30
D
b1
c
c1
D
b1
L2
E
9.70 10.10 ####
L3
e
2.04
-----
4.50
-----
2.54 3.04
1.50 -----
4.90 5.30
b
L2
L3
L4
1.50
----
L4
e
A
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
c
c1
A1
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