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SUM2153_15 [SECOS]

N-Channel Enhancement Mode MOSFET;
SUM2153_15
型号： SUM2153_15
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

N-Channel Enhancement Mode MOSFET
文件： 总4页 (文件大小：567K)
中文：  中文翻译
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SUM2153  
0.81A , 20V , RDS(ON) 310 mΩ  
N-Channel Enhancement Mode MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead-free  
DESCRIPTION  
SOT-363  
These miniature surface mount MOSFETs utilize a high  
cell density trench process to provide low RDS(on) and to  
ensure minimal power loss and heat dissipation.  
A
E
L
B
MECHANICAL DATA  
ꢀ
ꢀ
ꢀ
ꢀ
Trench Technology  
Supper high density cell design  
Excellent ON resistance  
F
C
H
J
Extremely Low Threshold Voltage  
K
D G  
APPLICATION  
Millimeter  
Millimeter  
Min. Max.  
0.100 REF.  
0.525 REF.  
0.08 0.25  
REF.  
REF.  
Min.  
1.80  
1.80  
1.15  
0.80  
Max.  
2.20  
2.45  
1.35  
1.10  
ꢀ
DC-DC converter circuit  
Load Switch  
A
B
C
D
G
H
J
ꢀ
K
8°  
E
F
1.10  
0.10  
1.50  
0.35  
L
0.650 TYP.  
MARKING  
53  
PACKAGE INFORMATION  
Package  
MPQ  
3K  
Leader Size  
SOT-363  
7 inch  
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter Symbol  
Rating  
Unit  
10S  
Steady State  
Drain – Source Voltage  
VDS  
VGS  
20  
±6  
V
V
Gate – Source Voltage  
TA= 25°C  
TA= 70°C  
TA= 25°C  
TA= 70°C  
TA= 25°C  
TA= 70°C  
TA= 25°C  
TA= 70°C  
0.89  
0.71  
0.38  
0.24  
0.76  
0.61  
0.28  
0.17  
0.81  
0.64  
0.31  
0.2  
Continuous Drain Current 1  
ID  
PD  
ID  
A
W
A
Power Dissipation 1  
0.69  
0.55  
0.23  
0.15  
Continuous Drain Current 2  
Power Dissipation 2  
PD  
W
Pulsed Drain Current 3  
Lead Temperature  
IDM  
TL  
1.4  
A
°C  
°C  
260  
Operating Junction & Storage Temperature Range  
TJ, TSTG  
150, -55~150  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Jan-2013 Rev. A  
Page 1 of 4  
SUM2153  
0.81A , 20V , RDS(ON) 310 mΩ  
N-Channel Enhancement Mode MOSFET  
Elektronische Bauelemente  
THERMAL RESISTANCE RATINGS  
Rating  
Parameter  
Symbol  
Unit  
Typ.  
Max.  
Single Operation  
T≦10S  
276  
328  
375  
446  
260  
325  
395  
445  
532  
300  
Junction-to-Ambient Thermal Resistance 1  
RθJA  
Steady State  
T≦10S  
°C / W  
Junction-to-Ambient Thermal Resistance 2  
Junction-to-Case Thermal Resistance  
RθJA  
RθJC  
Steady State  
Steady State  
Dual Operation  
T≦10S  
310  
366  
415  
498  
265  
360  
432  
486  
575  
305  
Junction-to-Ambient Thermal Resistance 1  
Junction-to-Ambient Thermal Resistance 2  
RθJA  
Steady State  
T≦10S  
°C / W  
RθJA  
RθJC  
Steady State  
Steady State  
Junction-to-Case Thermal Resistance  
Note:  
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.  
2. Surface mounted on FR4 board using minimum pad size, 1oz copper  
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%  
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min. Typ.  
Static  
20  
Max.  
Unit  
Teat Conditions  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
V(BR)DSS  
IDSS  
-
-
-
V
µA  
µA  
V
VGS=0, ID=250µA  
-
1
VDS=16V, VGS=0  
IGSS  
-
-
±5  
VDS=0 , VGS= ±5V  
VDS=VGS, ID=250µA  
VGS=4.5V, ID=0.55A  
Gate-Threshold Voltage  
VGS(TH)  
0.45  
0.58  
220  
260  
320  
2
0.85  
310  
360  
460  
-
-
-
-
-
Drain-Source On Resistance  
Forward Transconductance  
Diode Forward On–Voltage  
RDS(ON)  
mΩ VGS=2.5V, ID=0.45A  
VGS=1.8V, ID=0.35A  
gFS  
S
V
VDS=5V, ID= 0.55A  
IS=350mA, VGS=0  
Body-Drain Diode Ratings  
VSD 0.5 0.7  
Dynamic Characteristics  
1.5  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Threshold Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain Charge  
Turn-on Delay Time  
Rise Time  
CISS  
COSS  
CRSS  
QG(TOT)  
QG(TH)  
QGS  
-
-
-
-
-
-
-
-
-
-
-
50  
13  
-
-
-
-
-
-
-
-
-
-
-
VDS=10V,  
VGS=0,  
f=100KHz  
pF  
nC  
8
1.15  
0.06  
0.15  
0.23  
22  
VDS=10V,  
VGS=4.5V,  
ID=0.55A  
QGD  
Td(ON)  
Tr  
VDD=10V,  
I D=0.55A,  
VGS=4.5V,  
RG=6Ω.  
80  
nS  
Turn-off Delay Time  
Fall Time  
Td(OFF)  
Tf  
700  
380  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Jan-2013 Rev. A  
Page 2 of 4  
SUM2153  
0.81A , 20V , RDS(ON) 310 mΩ  
N-Channel Enhancement Mode MOSFET  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Jan-2013 Rev. A  
Page 3 of 4  
SUM2153  
0.81A , 20V , RDS(ON) 310 mΩ  
N-Channel Enhancement Mode MOSFET  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Jan-2013 Rev. A  
Page 4 of 4  

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