SEMIX201GD128DS_06 [SEMIKRON]
SPT IGBT Modules; SPT IGBT模块
| 型号： | SEMIX201GD128DS_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SPT IGBT Modules |
| 文件： | 总4页 (文件大小：1054K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 201GD128Ds
ꢌ
ꢍ '+,ꢗ- ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓ ꢊꢈꢅ ꢈ!ꢅꢑꢊꢎꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢑꢚꢈꢅ
Values
Units
IGBT
ꢖꢗꢘꢉ
.'((
'(( ꢙ.2(ꢛ
'((
ꢖ
$
/
/
ꢌꢑ ꢍ '+ ꢙ1(ꢛ ,ꢗ
ꢏ! ꢍ . ꢃꢈ
ꢗ
$
ꢗ34
ꢖ5ꢘꢉ
6 '(
ꢖ
ꢌ"7- ꢙꢌꢈꢏꢄ
ꢛ
ꢌ8ꢋꢘ3$ꢌ/89 : ꢌꢈꢏꢄ
$ꢗ- . ꢃꢊꢆ<
ꢐ ;( <<< = .+( ꢙ.'+ꢛ
,ꢗ
ꢖꢊꢈꢂꢔ
;(((
ꢖ
Inverse diode
®
SEMIX 13s
/
ꢌꢑ ꢍ '+ ꢙ1(ꢛ ,ꢗ
.2( ꢙ?(ꢛ
'((
$
$
>
/
ꢏ! ꢍ . ꢃꢈ
>34
/
ꢏ! ꢍ .( ꢃꢈ@ ꢈꢊꢆ<@ ꢌ7 ꢍ .+( ,ꢗ
..((
$
>ꢉ4
SPT IGBT Modules
ꢌ
ꢍ '+,ꢗ- ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓ ꢊꢈꢅ ꢈ!ꢅꢑꢊꢎꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢑꢚꢈꢅ
min.
typ.
max. Units
SEMiX 201GD128Ds
ꢖ5ꢘꢙꢏꢒꢛ
ꢖ5ꢘ ꢍ ꢖꢗꢘ- /ꢗ ꢍ ; ꢃ$
;-+
+
A-+
(-2
ꢖ
ꢃ$
ꢖ
/
ꢖ5ꢘ ꢍ (- ꢖꢗꢘ ꢍ ꢖꢗꢘꢉ- ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
ꢗꢘꢉ
ꢖꢗꢘꢙꢌ8ꢛ
ꢓꢗꢘ
ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
. ꢙ(-?ꢛ
? ꢙ.'ꢛ
.-.+ ꢙ.-(+ꢛ
.' ꢙ.+ꢛ
Preliminary Data
ꢖ5ꢘ ꢍ .+ ꢖ- ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
ꢃB
ꢖꢗꢘꢙꢈꢚꢏꢛ
/ꢗꢆꢂꢃ ꢍ .(( $- ꢖ5ꢘ ꢍ .+ ꢖ-
.-? ꢙ'-.ꢛ '-2+ ꢙ'-++ꢛ
ꢖ
ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ- ꢑꢒꢊ! ꢔꢅ"ꢅꢔ
Features
ꢗꢊꢅꢈ
ꢗꢂꢅꢈ
ꢗꢓꢅꢈ
Cꢗꢘ
ꢇꢆ%ꢅꢓ ꢎꢂꢔꢔꢂ ꢊꢆꢄ ꢑꢂꢆ%ꢊꢏꢊꢂꢆꢈ
1-.
.-'
.-.
'(
ꢆ>
ꢆ>
ꢆ>
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢉꢋꢌ ꢍ ꢉꢂꢎꢏꢐꢋꢇꢆꢑꢒꢐꢌꢒꢓꢂꢇꢄꢒ
ꢏꢅꢑꢒꢆꢂꢔꢂꢄꢕ
ꢀ
ꢀ
ꢖ5ꢘ ꢍ (- ꢖꢗꢘ ꢍ '+ ꢖ- ꢎ ꢍ . 4ꢁ*
ꢖ
ꢊꢏꢒ !ꢂꢈꢊꢏꢊ"ꢅ ꢏꢅꢃ!ꢅꢓꢚꢏꢇꢓꢅ
ꢀ
ꢀ
ꢗꢘꢙꢈꢚꢏꢛ
3ꢗꢗD=ꢘꢘD
ꢏꢅꢓꢃꢊꢆꢚꢔꢐꢑꢒꢊ!- ꢌꢑꢍ '+ ꢙ.'+ꢛ ,ꢗ
(-E ꢙ.ꢛ
ꢃB
ꢑꢂꢅꢎꢎꢊꢑꢊꢅꢆꢏ
ꢁꢊꢄꢒ ꢈꢒꢂꢓꢏ ꢑꢊꢓꢑꢇꢊꢏ ꢑꢚ!ꢚ#ꢊꢔꢊꢏꢕ
ꢏ%ꢙꢂꢆꢛFꢏꢓ
ꢏ%ꢙꢂꢎꢎꢛFꢏꢎ
ꢖꢗꢗ ꢍ A(( ꢖ- /ꢗꢆꢂꢃ ꢍ .(( $
ꢖ5ꢘ ꢍ 6 .+ ꢖ
'+( F ;+
;;+ F A(
ꢆꢈ
ꢆꢈ
Typical Applications
ꢘꢂꢆ ꢙꢘꢂꢎꢎ
ꢛ
35ꢂꢆ ꢍ 35ꢂꢎꢎ ꢍ ; B- ꢌ7 ꢍ .'+ ,ꢗ
.( ꢙ..ꢛ
ꢃG
$ꢗ ꢊꢆ"ꢅꢓꢏꢅꢓ %ꢓꢊ"ꢅꢈ
&ꢋꢉ
ꢘꢔꢅꢑꢏꢓꢂꢆꢊꢑ ꢅꢔ%ꢅꢓꢈ ꢎ ꢇ! ꢏꢂ '(
)ꢁ*
ꢀ
ꢀ
ꢀ
Inverse diode
ꢖ> ꢍ ꢖꢘꢗ
/
>ꢆꢂꢃ ꢍ .(( $@ ꢖ5ꢘ ꢍ ( ꢖ@ ꢌ7 ꢍ '+ ꢙ.'+ꢛ
' ꢙ.-1ꢛ
'-+ ꢙ'-2ꢛ
ꢖ
,ꢗ- ꢑꢒꢊ! ꢔꢅ"ꢅꢔ
ꢈ
ꢖꢙꢌ8ꢛ
ꢓꢌ
ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
.-. ꢙ(-?ꢛ
?
.-'
.2
ꢖ
ꢃB
$
/
/>ꢆꢂꢃ ꢍ .(( $@ ꢌ7 ꢍ '+ ꢙ.'+ꢛ ,ꢗ
ꢙ.'(ꢛ
ꢙ.;ꢛ
334
Hꢓꢓ
ꢘꢓꢓ
%ꢊF%ꢏ ꢍ 2'(( $FIꢈ
ꢖ5ꢘ ꢍ ꢐ.+ ꢖ
Iꢗ
ꢙ;-?ꢛ
ꢃG
Thermal characteristics
3ꢏꢒꢙ7ꢐꢑꢛ
!ꢅꢓ /5Jꢌ
(-.E
(-2A
KFL
KFL
KFL
3ꢏꢒꢙ7ꢐꢑꢛM
3ꢏꢒꢙ7ꢐꢑꢛ>M
!ꢅꢓ /ꢆ"ꢅꢓꢈꢅ Mꢊꢂ%ꢅ
!ꢅꢓ >LM
3ꢏꢒꢙꢑꢐꢈꢛ
!ꢅꢓ ꢃꢂ%ꢇꢔꢅ
(-(;
KFL
Temperature sensor
3'+
ꢌꢑ ꢍ '+ ,ꢗ
+ 6+N
2;'(
)O
K
J'+F1+
3'ꢍ3.ꢅP!QJꢙ.Fꢌ'ꢐ.Fꢌ.ꢛR @ ꢌQKR@J
Mechanical data
4ꢈF4ꢏ
ꢏꢂ ꢒꢅꢚꢏꢈꢊꢆ) ꢙ4+ꢛ F ꢎꢂꢓ ꢏꢅꢓꢃꢊꢆꢚꢔꢈ ꢙ4Aꢛ
2F'-+
+ F+
9ꢃ
ꢄ
'?(
GD
1
20-01-2006 GES
© by SEMIKRON
SEMiX 201GD128Ds
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
20-01-2006 GES
© by SEMIKRON
SEMiX 201GD128Ds
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward characteristic
3
20-01-2006 GES
© by SEMIKRON
SEMiX 201GD128Ds
Fig. 13 Typ. CAL diode recovered charge
5M
!ꢊꢆꢂꢇꢏ ꢉꢘ4ꢊS .2ꢈ
ꢗꢚꢈꢅ ꢉꢘ4ꢊS .2ꢈ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-01-2006 GES
© by SEMIKRON
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