SEMIX303GB12E4S [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX303GB12E4S |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX303GB12E4s
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
466
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
359
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
-20 ... 20
SEMiX® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
338
252
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1485
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
IC = 100 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
• Product reliability results are valid for
Tj=150°C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 11.4 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.5
1.22
1.03
1695
2.50
255
57
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
VCC = 600 V
IC = 300 A
ns
Eon
td(off)
tf
30
mJ
ns
RG on = 1.8 Ω
565
98
R
G off = 1.8 Ω
ns
di/dton = 5250 A/µs
di/dtoff = 2825 A/µs
Eoff
Rth(j-c)
41.2
mJ
K/W
per IGBT
0.095
GB
© by SEMIKRON
Rev. 4 – 16.12.2009
1
SEMiX303GB12E4s
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
2.2
2.2
2.52
2.5
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.7
3.5
1.3
0.9
1.5
1.1
3.4
4.6
V
V
3.0
mΩ
mΩ
A
4.2
SEMiX® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
IF = 300 A
di/dtoff = 5100 A/µs
IRRM
Qrr
300
44.2
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
17.7
mJ
Rth(j-c)
per diode
0.18
K/W
Module
LCE
20
0.7
1
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
Rth(c-s)
Ms
per module
0.04
• Homogeneous Si
to heat sink (M5)
3
5
5
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
to terminals (M6)
Mt
2.5
w
300
Temperatur Sensor
Typical Applications*
• AC inverter drives
• UPS
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
GB
2
Rev. 4 – 16.12.2009
© by SEMIKRON
SEMiX303GB12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 4 – 16.12.2009
3
SEMiX303GB12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4 – 16.12.2009
© by SEMIKRON
SEMiX303GB12E4s
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 4 – 16.12.2009
5
SEMiX303GB12E4s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
6
Rev. 4 – 16.12.2009
© by SEMIKRON
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