SEMIX353GD176HDC [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX353GD176HDC |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 353GD176HDc
ꢋ
ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ*
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
Values
Units
IGBT
ꢔꢕꢖꢉ
+,--
0/- ꢗ&,-ꢘ
2'-
ꢔ
1
%
%
ꢋꢍ ꢏ &' ꢗ/-ꢘ (ꢕ
ꢑꢚ ꢏ + ꢃꢈ
ꢕ
1
ꢕ$"
ꢔ3ꢖꢉ
4 &-
ꢔ
ꢋꢛ5) ꢗꢋꢈꢑꢄ
ꢘ
ꢋ67ꢖ$1ꢋ%68 9 ꢋꢈꢑꢄ
1ꢕ) + ꢃꢊꢆ;
: 2- ;;; < +'- ꢗ+&'ꢘ
(ꢕ
ꢔꢊꢈꢂꢒ
2---
ꢔ
Inverse diode
®
SEMiX 33c
%
ꢋꢍ ꢏ &' ꢗ/-ꢘ (ꢕ
0+- ꢗ&+-ꢘ
2'-
1
1
=
%
ꢑꢚ ꢏ + ꢃꢈ
=$"
%
ꢑꢚ ꢏ +- ꢃꢈ> ꢈꢊꢆ;> ꢋ5 ꢏ &' (ꢕ
+/--
1
=ꢉ"
Trench IGBT Modules
ꢋ
ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ*
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
SEMiX 353GD176HDc
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ) %ꢕ ꢏ ? ꢃ1
')&
')/
@)2
ꢔ
ꢃ1
ꢔ
%
ꢔ3ꢖ ꢏ -) ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ) ꢋ5 ꢏ &' ꢗꢘ (ꢕ
ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ
-)2'
ꢕꢖꢉ
ꢔꢕꢖꢗꢋ6ꢘ
ꢌꢕꢖ
+ ꢗ-)?ꢘ
+)& ꢗ+)+ꢘ
')' ꢗ/ꢘ
Preliminary Data
ꢔ3ꢖ ꢏ +' ꢔ) ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ
2)2 ꢗ@)?ꢘ
ꢃA
ꢔꢕꢖꢗꢈꢐꢑꢘ
%ꢕꢆꢂꢃ ꢏ &&' 1) ꢔ3ꢖ ꢏ +' ꢔ)
& ꢗ&)2'ꢘ
&)2' ꢗ&)?ꢘ
ꢔ
ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
Features
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Cꢕꢖ
ꢇꢆ*ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ*ꢊꢑꢊꢂꢆꢈ
+,)+
-)/
-),
&-
ꢆ=
ꢆ=
ꢆ=
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ3ꢖ ꢏ -) ꢔꢕꢖ ꢏ &' ꢔ) ꢏ + "ꢁB
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
$
ꢑꢅꢌꢃꢊꢆꢐꢒ:ꢍꢎꢊꢚ) ꢋꢍꢏ &' ꢗ+&'ꢘ (ꢕ
-), ꢗ+ꢘ
ꢃA
ꢕꢕD<ꢖꢖD
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢑ*ꢗꢂꢆꢘEꢑꢌ
ꢔꢕꢕ ꢏ +&-- ꢔ) %ꢕꢆꢂꢃ ꢏ &&' 1
ꢔ3ꢖ ꢏ 4 +' ꢔ
&'- E ,'
ꢆꢈ
ꢆꢈ
ꢑ*ꢗꢂ ꢘEꢑ
?0- E +/-
Typical Applications
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
$3ꢂꢆ ꢏ $3ꢂ ꢏ ')@ F) ꢋ5 ꢏ +&' (ꢕ
+2/ ꢗ/+ꢘ
+), ꢗ+),ꢘ
ꢃG
"ꢐꢑꢌꢊ# ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
$ꢅꢈꢂꢆꢐꢆꢑ %ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ %ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ= ꢏ ꢔꢖꢕ
%=ꢆꢂꢃ ꢏ &&' 1> ꢔ3ꢖ ꢏ - ꢔ> ꢋ5 ꢏ &' ꢗ+&'ꢘ
+)? ꢗ+)?ꢘ
ꢔ
(ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢔꢗꢋ6ꢘ
ꢌꢋ
ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ
ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ
+)+ ꢗ-)?ꢘ
&), ꢗ0)@ꢘ
ꢗ&/-ꢘ
+)0 ꢗ+)+ꢘ
&), ꢗ0)@ꢘ
ꢔ
ꢃA
1
%
%=ꢆꢂꢃ ꢏ &&' 1> ꢋ5 ꢏ &' ꢗ+&'ꢘ (ꢕ
$$"
Hꢌꢌ
ꢖꢌꢌ
*ꢊE*ꢑ ꢏ 2--- 1EIꢈ
ꢗ/0ꢘ
Iꢕ
ꢔ3ꢖ ꢏ :+' ꢔ
ꢗ2'ꢘ
ꢃG
Thermal characteristics
$
$
$
ꢚꢅꢌ %3Jꢋ
-)-/
KEL
KEL
KEL
ꢑꢎꢗ5:ꢍꢘ
ꢚꢅꢌ %ꢆꢛꢅꢌꢈꢅ Mꢊꢂ*ꢅ
ꢚꢅꢌ =LM
-)+20
ꢑꢎꢗ5:ꢍꢘM
ꢑꢎꢗ5:ꢍꢘ=M
$
ꢚꢅꢌ ꢃꢂ*ꢇꢒꢅ
-)-+2
KEL
ꢑꢎꢗꢍ:ꢈꢘ
Temperature sensor
$
ꢋꢍ ꢏ &' (ꢕ
' 4'N
02&-
OF
K
&'
J&'E/'
$&ꢏ$+ꢅ#ꢚPJꢗ+Eꢋ&:+Eꢋ+ꢘQ > ꢋPKQ>J
Mechanical data
"ꢈE"ꢑ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆO ꢗ"'ꢘ E ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ"@ꢘ
0E&)'
' E'
8ꢃ
ꢄ
ꢙ
//&
GD
1
15-06-2005 SEN
© by SEMIKRON
SEMiX 353GD176HDc
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
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15-06-2005 SEN
© by SEMIKRON
SEMiX 353GD176HDc
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 Typ. CAL diode forward characteristic
3
15-06-2005 SEN
© by SEMIKRON
SEMiX 353GD176HDc
Fig. 13 Typ. CAL diode recovered charge
3M
ꢕꢐꢈꢅ ꢉꢖ"ꢊR 00ꢍ
ꢕꢐꢈꢅ ꢉꢖ"ꢊR 00ꢍ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
15-06-2005 SEN
© by SEMIKRON
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