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SEMIX452GB126HDS_11 [SEMIKRON]

Trench IGBT Modules; 沟道IGBT模块
SEMIX452GB126HDS_11
型号： SEMIX452GB126HDS_11
厂家： SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述：

Trench IGBT Modules
沟道IGBT模块

双极性晶体管
文件： 总5页 (文件大小：583K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SEMiX452GB126HDs  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
IC  
1200  
455  
319  
300  
600  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 150 °C  
ICnom  
ICRM  
VGES  
ICRM = 2xICnom  
VCC = 600 V  
-20 ... 20  
SEMiX® 2s  
Trench IGBT Modules  
SEMiX452GB126HDs  
Features  
V
V
GE ≤ 20 V  
CES ≤ 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 150  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
394  
272  
300  
A
A
A
A
A
Tj = 150 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
600  
1900  
-40 ... 150  
• Homogeneous Si  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
Module  
It(RMS)  
Tstg  
Tterminal = 80 °C  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
• AC inverter drives  
• UPS  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Electronic Welding  
Remarks  
IC = 300 A  
Tj = 25 °C  
VCE(sat)  
1.7  
2.0  
2.1  
V
V
• Case temperatur limited to TC=125°C  
max.  
V
GE = 15 V  
Tj = 125 °C  
2.45  
chiplevel  
• Not for new design  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
VCE0  
rCE  
1
1.2  
1.1  
3.0  
4.5  
6.5  
0.3  
V
V
m  
m  
V
mA  
mA  
nF  
nF  
nF  
nC  
0.9  
2.3  
3.7  
5.8  
0.1  
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 12 mA  
Tj = 25 °C  
V
5
VGE = 0 V  
CE = 1200 V  
Tj = 125 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
21.5  
1.13  
0.98  
2400  
2.50  
280  
65  
35  
630  
130  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
ns  
I
C = 300 A  
ns  
mJ  
ns  
V
GE = ±15 V  
R
R
G on = 2   
G off = 2   
ns  
Tj = 125 °C  
Eoff  
45  
mJ  
Rth(j-c)  
per IGBT  
0.083  
K/W  
GB  
© by SEMIKRON  
Rev. 1 – 23.03.2011  
1
SEMiX452GB126HDs  
Characteristics  
Symbol Conditions  
Inverse diode  
min.  
typ.  
max.  
Unit  
IF = 300 A  
Tj = 25 °C  
VF = VEC  
1.6  
1.6  
1.80  
1.8  
V
V
V
GE = 0 V  
Tj = 125 °C  
chip  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 125 °C  
Tj = 125 °C  
VF0  
rF  
0.9  
0.7  
1.7  
2.3  
1
1.1  
0.9  
2.3  
3.0  
V
V
m  
m  
A
0.8  
2.0  
2.7  
375  
75  
SEMiX® 2s  
Trench IGBT Modules  
SEMiX452GB126HDs  
Features  
IF = 300 A  
IRRM  
Qrr  
di/dtoff = 6200 A/µs  
µC  
V
V
GE = -15 V  
CC = 600 V  
Tj = 125 °C  
Err  
33  
mJ  
Rth(j-c)  
per diode  
0.15  
K/W  
Module  
LCE  
RCC'+EE'  
18  
0.7  
1
nH  
m  
m  
K/W  
Nm  
Nm  
Nm  
g
TC = 25 °C  
res., terminal-chip  
T
C = 125 °C  
Rth(c-s)  
Ms  
Mt  
per module  
to heat sink (M5)  
0.045  
• Homogeneous Si  
3
2.5  
5
5
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognised file no. E63532  
to terminals (M6)  
w
250  
Temperatur Sensor  
R100  
Typical Applications*  
Tc=100°C (R25=5 k)  
493 ± 5%  
3550  
±2%  
• AC inverter drives  
• UPS  
B100/125  
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];  
K
• Electronic Welding  
Remarks  
• Case temperatur limited to TC=125°C  
max.  
• Not for new design  
GB  
2
Rev. 1 – 23.03.2011  
© by SEMIKRON  
SEMiX452GB126HDs  
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2: Rated current vs. temperature IC = f (TC)  
Fig. 4: Typ. turn-on /-off energy = f (RG)  
Fig. 6: Typ. gate charge characteristic  
Fig. 3: Typ. turn-on /-off energy = f (IC)  
Fig. 5: Typ. transfer characteristic  
© by SEMIKRON  
Rev. 1 – 23.03.2011  
3
SEMiX452GB126HDs  
Fig. 7: Typ. switching times vs. IC  
Fig. 8: Typ. switching times vs. gate resistor RG  
Fig. 9: Typ. transient thermal impedance  
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'  
Fig. 11: Typ. CAL diode peak reverse recovery current  
Fig. 12: Typ. CAL diode recovery charge  
4
Rev. 1 – 23.03.2011  
© by SEMIKRON  
SEMiX452GB126HDs  
SEMiX 2s  
spring configuration  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.  
© by SEMIKRON  
Rev. 1 – 23.03.2011  
5

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