SK10DGDL12T4ETE1 [SEMIKRON]
Insulated Gate Bipolar Transistor,;
| 型号： | SK10DGDL12T4ETE1 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总7页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK10DGDL12T4ETE1
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
Values
Unit
Tj = 25 °C
VCES
IC
1200
18
15
20
16
8
24
V
A
A
A
A
A
A
V
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
SEMITOP®E1
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
tpsc
Tj
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
10
µs
°C
-40 ... 175
Engineering Sample
SK10DGDL12T4ETE1
Target Data
Absolute Maximum Ratings
Symbol Conditions
IGBT 2
Values
Unit
Tj = 25 °C
VCES
IC
1200
18
15
20
16
8
24
V
A
A
A
A
A
A
V
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
-20 ... 20
V
V
GE ≤ 15 V
Tj = 150 °C
tpsc
Tj
10
µs
°C
CES ≤ 1200 V
-40 ... 175
Typical Applications
Absolute Maximum Ratings
Symbol Conditions
Diode 1
• Inverter up to 8kVA
• Typical motor power 4kW
Values
Unit
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
Tj = 25 °C
VRRM
IF
1600
36
27
V
A
A
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 150 °C
IF
39
29
A
A
λpaste=2.5 W/(mK)
Tj = 150 °C
IFnom
IFSM
i2t
8
A
A
A²s
°C
10 ms, sin 180°, Tj = 150 °C
10 ms, sin 180°, Tj = 150 °C
200
200
-40 ... 150
Tj
DGDL-ET
© by SEMIKRON
Rev. 0.2 – 23.07.2019
1
SK10DGDL12T4ETE1
Absolute Maximum Ratings
Symbol Conditions
Diode 2
Values
Unit
Tj = 25 °C
VRRM
IF
1200
17
14
18
V
A
A
A
A
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
15
IFnom
IFRM
IFSM
8
24
36
A
A
A
A
SEMITOP®E1
IFRM = 3 x IFnom
10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
36
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK10DGDL12T4ETE1
Target Data
Tj
-40 ... 175
°C
Absolute Maximum Ratings
Symbol Conditions
Diode 3
VRRM
IF
Values
Unit
Tj = 25 °C
1200
17
14
18
15
8
24
36
36
V
A
A
A
A
A
A
A
A
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
IFnom
IFRM
IFSM
IFRM = 3 x IFnom
10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
Tj
-40 ... 175
°C
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Values
Unit
Typical Applications
• Inverter up to 8kVA
Tterminal = 80 °C, TS = 60°C, per pin
30
-40 ... 125
2500
A
°C
V
• Typical motor power 4kW
Visol
AC, sinusoidal, t = 1 min
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
DGDL-ET
2
Rev. 0.2 – 23.07.2019
© by SEMIKRON
SK10DGDL12T4ETE1
Characteristics
Symbol Conditions
IGBT 1
min.
typ.
max.
Unit
IC = 8 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
131
194
5.8
0.90
0.80
150
206
6.5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
VGE = 15 V
chiplevel
SEMITOP®E1
VGE = VCE, IC = 1 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
5
1
0.49
0.05
0.03
45
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK10DGDL12T4ETE1
Target Data
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
0
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
t.b.d.
t.b.d.
1.55
t.b.d.
t.b.d.
I
C = 10 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 47 Ω
G off = 47 Ω
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
Tj = 150 °C
Eoff
0.87
mJ
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
1.8
1.5
K/W
K/W
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
Characteristics
Symbol Conditions
IGBT 2
min.
typ.
max.
Unit
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
IC = 8 A
Tj = 25 °C
VCE(sat)
1.85
2.25
2.10
2.45
V
V
Typical Applications
V
GE = 15 V
Tj = 150 °C
chiplevel
• Inverter up to 8kVA
• Typical motor power 4kW
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
131
194
5.8
0.90
0.80
150
206
6.5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
VGE = 15 V
chiplevel
VGE = VCE, IC = 1 mA
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
5
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
-
1
0.49
0.05
0.03
45
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
0
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
t.b.d.
t.b.d.
1.55
t.b.d.
t.b.d.
I
C = 10 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 47 Ω
G off = 47 Ω
Tj = 150 °C
Eoff
0.87
mJ
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
1.8
1.5
K/W
K/W
DGDL-ET
© by SEMIKRON
Rev. 0.2 – 23.07.2019
3
SK10DGDL12T4ETE1
Characteristics
Symbol Conditions
Diode 1
min.
typ.
max.
Unit
IF = 8 A
Tj = 25 °C
VF
1.00
0.90
1.21
1.10
V
V
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF0
0.88
0.73
15
0.98
0.83
29
34
2
V
V
chiplevel
rF
mΩ
mΩ
mA
K/W
K/W
chiplevel
21
SEMITOP®E1
Tj = 145 °C, VRRM
IR
Rth(j-s)
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
1.7
1.5
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK10DGDL12T4ETE1
Target Data
Characteristics
Symbol Conditions
Diode 2
VF
min.
typ.
max.
Unit
IF = 8 A
Tj = 25 °C
2.33
2.35
2.65
2.68
V
V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
1.30
0.90
129
181
t.b.d.
t.b.d.
1.50
1.10
144
198
V
V
mΩ
mΩ
A
Features*
chiplevel
• Low inductive design
rF
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
chiplevel
IF = 10 A
IRRM
Qrr
µC
VGE = -15 V
Tj = 150 °C
Err
0.59
mJ
V
CC = 600 V
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
2.1
1.8
K/W
K/W
Characteristics
Typical Applications
Symbol Conditions
Diode 3
VF
min.
typ.
max.
Unit
• Inverter up to 8kVA
• Typical motor power 4kW
IF = 8 A
Tj = 25 °C
2.33
2.35
2.65
2.68
V
V
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
1.30
0.90
129
181
t.b.d.
t.b.d.
1.50
1.10
144
198
V
V
mΩ
mΩ
A
chiplevel
rF
chiplevel
IF = 10 A
IRRM
Qrr
µC
VGE = -15 V
Tj = 150 °C
Err
0.59
mJ
V
CC = 600 V
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Rth(j-s)
Rth(j-s)
2.1
1.8
K/W
K/W
DGDL-ET
4
Rev. 0.2 – 23.07.2019
© by SEMIKRON
SK10DGDL12T4ETE1
Characteristics
Symbol Conditions
Module
min.
typ.
max.
Unit
Ms
w
to heatsink
weight
1.8
2
Nm
g
25
Characteristics
Symbol Conditions
Temperature Sensor
min.
typ.
max.
Unit
SEMITOP®E1
Tr = 100 °C
R100
493 ± 5%
3550
±2%
Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
K
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK10DGDL12T4ETE1
Target Data
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft freewheeling diode
CAL4F technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Typical Applications
• Inverter up to 8kVA
• Typical motor power 4kW
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
DGDL-ET
© by SEMIKRON
Rev. 0.2 – 23.07.2019
5
SK10DGDL12T4ETE1
SEMITOP®E1
DGDL-ET
6
Rev. 0.2 – 23.07.2019
© by SEMIKRON
SK10DGDL12T4ETE1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
In accordance with the quality guidelines of SEMIKRON, we would like to point out that the products are engineering samples. These
engineering samples are not yet produced under quality conditions approaching those of series production, and are at the present time not
included in the SEMIKRON quality monitoring and control process. Neither the product nor the production process has to date gone completely
through the SEMIKRON internal authorization procedure. SEMIKRON may make any amendments without any prior notification. SEMIKRON
cannot and shall not promise or commit itself to release and/or make available a final version or series product after the development phase.
SEMIKRON cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to and interaction
with possible applications of the user or with regard to any other potential risks resulting from the use of engineering samples. Therefore
SEMIKRON explicitly excludes any warranty and liability; as far as legally possible. The customer shall fully indemnify and hold harmless
SEMIKRON from any and all risks, damages, losses, expenses and costs directly or indirectly resulting out of or in connection with the
commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the customer and/or any
third party, which has come into possession of engineering samples through or because of the customer. All know-how and all registerable
and non-registerable copyrights and industrial property rights arising from or in connection with these engineering samples remain the
exclusive property of SEMIKRON.
© by SEMIKRON
Rev. 0.2 – 23.07.2019
7
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