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SKAI90A2GD06-W24CI [SEMIKRON]

Three-phase IGBT inverter; 三相IGBT逆变器

SKAI90A2GD06-W24CI


型号：	SKAI90A2GD06-W24CI
厂家：	SEMIKRON INTERNATIONAL
描述：	Three-phase IGBT inverter 三相IGBT逆变器双极性晶体管
文件：	总9页 (文件大小：433K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

SKAI90A2GD06-W24DI

Three-phase IGBT inverter

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37 SEMIKRON

SKAR47M100

Axial Leaded Aluminum Electrolytic Capacitors

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10 CDE

SKAR47M350

Axial Leaded Aluminum Electrolytic Capacitors

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7 CDE

SKB

SURFACE MOUNT RECTIFIER

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31 BL Galaxy Ele

SKB02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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40 INFINEON

SKB02N120_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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9 INFINEON

SKB02N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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31 INFINEON

SKB02N60ATMA1

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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3 INFINEON

SKB02N60E3266

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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3 INFINEON

SKB02N60_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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11 INFINEON

SKB04N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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18 INFINEON

SKB04N60-E-3045A

Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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4 INFINEON

SKB04N60ATMA1

Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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5 INFINEON

SKB04N60XT

暂无描述

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1 INFINEON

SKB04N60_07

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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16 INFINEON

SKB06N60

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17 INFINEON

SKB06N60ATMA1

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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2 INFINEON

SKB06N60HS

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50 INFINEON

SKB06N60HSATMA1

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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2 INFINEON

SKB06N60HS_07

High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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14 INFINEON

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