SKM400GAL124D [SEMIKRON]
Low Loss IGBT Modules; 低损耗IGBT模块
| 型号： | SKM400GAL124D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Low Loss IGBT Modules |
| 文件： | 总4页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB124D
ꢛ 5 26 7,ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑ$ꢄꢘꢏ ꢘꢆꢏꢐꢄ)ꢄꢏꢒ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢐ
Values
Units
%
1233
6;3 ꢉ<33ꢓ
*33
%
/
,8ꢃ
ꢛꢐ 5 26 ꢉ:3ꢓ 7,
ꢈꢆ 5 1 ꢗꢘ
,
/
,=ꢁ
%
> 23
%
!8ꢃ
ꢛꢊ?ꢖ ꢉꢛꢘꢈꢎ
ꢓ
ꢛꢂꢚ8=/ꢛ ꢂꢔ @ ꢛꢘꢈꢎ
/,ꢖ 1 ꢗꢄꢅA
ꢙ <3 AAA B 163 ꢉ126ꢓ
7,
%
2633
%
ꢄꢘꢋꢌ
Inverse diode
TM
ꢛꢐ 5 26 ꢉ:3ꢓ 7,
CD3 ꢉ2*3ꢓ
*33
/
/
SEMITRANS
3
-
ꢈꢆ 5 1 ꢗꢘ
-=ꢁ
ꢈꢆ 5 13 ꢗꢘE ꢘꢄꢅAE ꢛ? 5 163 7,
2D33
/
-ꢃꢁ
Low Loss IGBT Modules
Freewheeling diode
ꢛꢐ 5 26 ꢉ:3ꢓ 7,
CD3 ꢉ2*3ꢓ
*33
/
/
-
ꢈꢆ 5 1 ꢗꢘ
-=ꢁ
SKM 400GB124D
SKM 400GAL124D
SKM 400GAR124D
ꢈꢆ 5 13 ꢗꢘE ꢘꢄꢅAE ꢛ? 5 163 7,
2D33
/
-ꢃꢁ
ꢛ 5 26 7,ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑ$ꢄꢘꢏ ꢘꢆꢏꢐꢄ)ꢄꢏꢒ
Characteristics
Symbol Conditions
IGBT
ꢐ
min.
typ.
max. Units
%
%!8 5 %,8ꢖ , 5 12 ꢗ/
<ꢖ6
6ꢖ6
3ꢖ2
*ꢖ6
3ꢖ*
%
ꢗ/
%
!8ꢉꢈꢕꢓ
%!8 5 3ꢖ %,8 5 %,8ꢃꢖ ꢛ? 5 26 ꢉ126ꢓ 7,
,8ꢃ
Features
%
ꢛ? 5 26 ꢉ126ꢓ 7,
!8 5 16 %ꢖ ꢛ? 5 26 ꢉ126ꢓ 7,
,ꢅꢋꢗ 5 C33 /ꢖ %!8 5 16 %ꢖ ꢐꢕꢄꢆ ꢌꢏꢊꢏꢌ
ꢇꢅꢒꢏꢑ )ꢋꢌꢌꢋ$ꢄꢅꢎ ꢐꢋꢅꢒꢄꢈꢄꢋꢅꢘ
!8 5 3ꢖ %,8 5 26 %ꢖ ) 5 1 ꢁ'G
1ꢖ1 ꢉ1ꢖ1ꢓ 1ꢖ26 ꢉ1ꢖ26ꢓ
CꢖC ꢉ<ꢖCꢓ < ꢉ6ꢖCꢓ
2ꢖ1 ꢉ2ꢖ<ꢓ 2ꢖ<6 ꢉ2ꢖ:6ꢓ
,8ꢉꢛꢂꢓ
ꢁꢂꢃ ꢄꢅꢆꢇꢈ ꢉꢊꢋꢌꢈꢍꢎꢏ ꢐꢋꢅꢈꢑꢋꢌꢌꢏꢒꢓ
ꢔ ꢐꢕꢍꢅꢅꢏꢌꢖ ꢕꢋꢗꢋꢎꢏꢅꢏꢋꢇꢘ
ꢃꢄꢙꢘꢈꢑꢇꢐꢈꢇꢑꢏ ꢉꢔꢚꢛꢙ ꢔꢋꢅ
ꢆꢇꢅꢐꢕꢙꢈꢕꢑꢋꢇꢎꢕ !"ꢛꢓ
ꢑ,8
%
%
ꢗF
ꢀ
ꢀ
%
,8ꢉꢘꢍꢈꢓ
,
,
,
#
22
CꢖC
1ꢖ2
C3
<
ꢅ-
ꢅ-
ꢅ-
ꢅ'
ꢄꢏꢘ
%
ꢋꢏꢘ
ꢑꢏꢘ
#ꢋ$ ꢄꢅꢒꢇꢐꢈꢍꢅꢐꢏ ꢐꢍꢘꢏ
%ꢏꢑ& ꢌꢋ$ ꢈꢍꢄꢌ ꢐꢇꢑꢑꢏꢅꢈ $ꢄꢈꢕ ꢌꢋ$
ꢈꢏꢗꢆꢏꢑꢍꢈꢇꢑꢏ ꢒꢏꢆꢏꢅꢒꢏꢅꢐꢏ
1ꢖ*
23
ꢀ
ꢀ
,8
=
ꢑꢏꢘAꢖ ꢈꢏꢑꢗꢄꢅꢍꢌꢙꢐꢕꢄꢆ ꢛꢐ5 26 ꢉ126ꢓ 7,
,, 5 *33 %ꢖ ,ꢅꢋꢗ 5 C33 /
!ꢋꢅ 5 =!ꢋ)) 5 6 Fꢖ ꢛ? 5 126 7,
!8 5 > 16 %
3ꢖC6 ꢉ3ꢖ6ꢓ
ꢗF
,,HB88H
'ꢄꢎꢕ ꢘꢕꢋꢑꢈ ꢐꢄꢑꢐꢇꢄꢈ ꢐꢍꢆꢍ(ꢄꢌꢄꢈ&ꢖ ꢘꢏꢌ)
ꢀ
ꢈꢒꢉꢋꢅꢓ
%
:6
*6
ꢅꢘ
ꢅꢘ
ꢅꢘ
ꢅꢘ
ꢌꢄꢗꢄꢈꢄꢅꢎ ꢈꢋ * +
ꢈꢑ
=
,ꢔꢂꢁ
#ꢍꢈꢐꢕꢙꢇꢆ )ꢑꢏꢏ
-ꢍꢘꢈ . ꢘꢋ)ꢈ ꢄꢅꢊꢏꢑꢘꢏ ,/# 0ꢄꢋꢒꢏꢘ
ꢘꢋꢌꢍꢈꢏꢒ ꢐꢋꢆꢆꢏꢑ (ꢍꢘꢏꢆꢌꢍꢈꢏ ꢇꢘꢄꢅꢎ
0," 0ꢄꢑꢏꢐꢈ ,ꢋꢆꢆꢏꢑ "ꢋꢅꢒꢄꢅꢎ
ꢈꢒꢉꢋ))ꢓ
ꢈ)
%
*:3
6*
ꢀ
ꢀ
ꢀ
8ꢋꢅ ꢉ8ꢋ))
ꢓ
C* ꢉ<2ꢓ
ꢗI
Inverse diode
%
ꢛꢏꢐꢕꢅꢋꢌꢋꢎ& $ꢄꢈꢕꢋꢇꢈ ꢕꢍꢑꢒ ꢗꢋꢇꢌꢒ
- 5 %8,
-ꢅꢋꢗ 5 C33 /E %!8 5 3 %E ꢛ? 5 26 ꢉ126ꢓ
2 ꢉ1ꢖ:ꢓ
ꢉ1ꢖ1ꢓ
2ꢖ6
%
#ꢍꢑꢎꢏ ꢐꢌꢏꢍꢑꢍꢅꢐꢏ ꢉ12 ꢗꢗꢓ ꢍꢅꢒ
ꢐꢑꢏꢏꢆꢍꢎꢏ ꢒꢄꢘꢈꢍꢅꢐꢏ ꢉ23 ꢗꢗꢓ
7,
ꢀ
%
ꢛ? 5 ꢉ126ꢓ 7,
ꢛ? 5 ꢉ126ꢓ 7,
ꢉ1ꢖ2ꢓ
ꢉCꢖ6ꢓ
%
ꢗF
/
ꢉꢛꢂꢓ
ꢑꢛ
Typical Applications
-ꢅꢋꢗ 5 C33 /E ꢛ? 5 ꢉ 126 ꢓ 7,
ꢒꢄKꢒꢈ 5 /KLꢘ
!8 5 %
ꢉ1C*ꢓ
C*
==ꢁ
Jꢑꢑ
8ꢑꢑ
L,
ꢃ$ꢄꢈꢐꢕꢄꢅꢎ ꢉꢅꢋꢈ )ꢋꢑ ꢌꢄꢅꢏꢍꢌ ꢇꢘꢏꢓ
ꢅꢊꢏꢑꢈꢏꢑ ꢒꢑꢄꢊꢏꢘ
4ꢚꢃ
ꢀ
ꢀ
ꢀ
%
ꢗI
FWD
%
- 5 %8,
- 5 C33 /E %!8 5 3 %ꢖ ꢛ? 5 26 ꢉ126ꢓ 7,
2 ꢉ1ꢖ:ꢓ
ꢉ1ꢖ1ꢓ
2ꢖ6
%
%
%
ꢛ? 5 ꢉ126ꢓ 7,
ꢛ? 5 ꢉ126ꢓ 7,
ꢉ1ꢖ2ꢓ
ꢉCꢖ6ꢓ
ꢉꢛꢂꢓ
ꢑꢛ
ꢗF
/
- 5 C33 /E ꢛ? 5 ꢉ126 ꢓ 7,
ꢒꢄKꢒꢈ 5 /KLꢘ
!8 5 %
ꢉ1C*ꢓ
C*
==ꢁ
Jꢑꢑ
8ꢑꢑ
L,
%
ꢗI
Thermal characteristics
=
=
=
ꢆꢏꢑ !"ꢛ
3ꢖ36
3ꢖ126
3ꢖ126
MKN
MKN
MKN
ꢈꢕꢉ?ꢙꢐꢓ
ꢆꢏꢑ ꢅꢊꢏꢑꢘꢏ 0ꢄꢋꢒꢏ
ꢆꢏꢑ -N0
ꢈꢕꢉ?ꢙꢐꢓ0
ꢈꢕꢉ?ꢙꢐꢓ-0
=
ꢆꢏꢑ ꢗꢋꢒꢇꢌꢏ
3ꢖ3C:
MKN
ꢈꢕꢉꢐꢙꢘꢓ
Mechanical data
ꢁꢘ
ꢈꢋ ꢕꢏꢍꢈꢘꢄꢅO ꢁ*
C
6
6
ꢔꢗ
ꢔꢗ
ꢁꢈ
ꢈꢋ ꢈꢏꢑꢗꢄꢅꢍꢌꢘ ꢁ*
2ꢖ6
GB
GAL
GAR
$
C26
ꢎ
1
19-09-2005 RAA
© by SEMIKRON
SKM 400GB124D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
19-09-2005 RAA
© by SEMIKRON
SKM 400GB124D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
19-09-2005 RAA
© by SEMIKRON
SKM 400GB124D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
!"
,ꢍꢘꢏ 0 6*
,ꢍꢘꢏ 0 6; ꢉP 0 6*ꢓ
,ꢍꢘꢏ 0 6: ꢉP 0 6*ꢓ
!/#
!/=
,ꢍꢘꢏ 0 6*
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-09-2005 RAA
© by SEMIKRON
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