MMBTA10 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | MMBTA10 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总1页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA10 / MMBTA11
NPN Silicon Epitaxial Planar Transistor
VHF / UHF transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 oC)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
30
25
V
3
100
V
mA
mW
Total Dissipation
Ptot
200
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
Ts
- 55 to + 150
O
Characteristics at Tamb = 25 C
Parameter
Symbol
Min
Max
-
Unit
DC Current Gain
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
-
V
at VCE = 10 V, IC = 4 mA
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Cutoff Current
at VCB = 25 V
Emitter Cutoff Current
at VEB = 2 V
Collector Emitter Saturation Voltage
at IC = 4 mA, IB = 0.4 mA
Base-Emitter On Voltage
at VCE = 10 V, IC = 4 mA
Current Gain Bandwidth Product
30
-
-
25
V
3
-
V
-
100
100
0.5
0.95
-
nA
nA
V
IEBO
-
VCE(sat)
VBE(on)
fT
-
-
650
-
V
MHz
pF
at VCE = 10 V, IC = 4 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Ccb
0.7
Collector Base Feedback Capacitance
VCB = 10 V, f = 1 MHz
MMBTA10
MMBTA11
0.35
0.6
0.65
0.9
pF
pF
Crb
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/06/2006
相关型号：
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