ST2N5088 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
ST2N5088
型号: ST2N5088
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总5页 (文件大小:351K)
中文:  中文翻译
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ST 2N5088 / 2N5089  
NPN Silicon Epitaxial Planar Transistor  
for switching and AF amplifier applications.  
The transistor is subdivided into one group  
according to it DC current gain. As complementary  
type the PNP transistor ST 2N5086 and ST  
2N5087 are recommended.  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
Weight approx. 0.19g  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
35  
30  
V
V
4.5  
V
50  
mA  
mW  
Power Dissipation  
Ptot  
500  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5088 / 2N5089  
O
Characteristics at Tamb=25 C  
Parameter  
DC Current Gain  
Symbol  
Min.  
Typ.  
Max.  
Unit  
ST 2N5088  
ST 2N5089  
ST 2N5088  
ST 2N5089  
ST 2N5088  
ST 2N5089  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
300  
400  
300  
400  
300  
400  
-
-
-
-
-
-
900  
-
-
-
-
-
-
at VCE=5V, IC=0.1mA  
1200  
-
-
-
-
at VCE=5V, IC=1mA  
at VCE=5V, IC=10mA  
Collector Base Breakdown Voltage  
at IC=100µA  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
35  
30  
4.5  
-
-
-
-
V
V
Collector Emitter Breakdown Voltage  
at IC=1mA  
-
Emitter Base Breakdown Voltage  
at IE=10µA  
-
-
V
Collector Cutoff Current  
at VCB=35V  
-
0.05  
0.05  
0.5  
0.8  
-
µA  
µA  
V
Emitter Cutoff Current  
at VEB=4.5V  
IEBO  
-
-
Collector Saturation Voltage  
at IC=10mA, IB=1mA  
Base Emitter Voltage  
at VCE=5V, IC=10mA  
Gain Bandwidth Product  
at VCE=5V, IC=0.5mA  
Output Capacitance  
at VCB=10V, f=1MHz  
Noise Figure  
VCE(sat)  
VBE(on)  
fT  
-
-
-
-
V
50  
-
180  
MHz  
pF  
dB  
COB  
-
-
4
NF  
-
3
at VCE=6V, IC=0.3mA, f=100Hz, RS=10K  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5088 / 2N5089  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5088 / 2N5089  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5088 / 2N5089  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  

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