SI4012_技术文档

Si4012

Si4012 CRYSTAL-LESS RF TRANSMITTER

Features



Frequency range

27–960 MHz

Output Power Range

–13 to +10 dBm

Low Power Consumption

OOK



Crystal-less operation

±150 ppm: 0 to 20° C

±250 ppm: –40 to 85° C

Optional crystal input for higher

tolerances

Low power shutdown mode

Integrated voltage regulator

256 byte FIFO

Low battery detector

SMBus Interface

–40 to +85 °C temperature range

10-Pin MSOP Package, Pb-free

RoHs compliant



14.2 mA @ +10 dBm

FSK

19.8 mA @ +10 dBm

Ordering Information:



Data Rate = 0 to 100 kbaud FSK

FSK and OOK modulation

Power Supply = 1.8 to 3.6 V

See page 53.



Low BOM

Pin Assignments

Si4012

Applications



Wireless MBus T1-mode

Remote control

Home security & alarm

Personal data logging

Toy control



Remote meter reading

Remote keyless entry

Home automation

Industrial control

Sensor networks

Health monitors

GPIO0/XTAL

1

2

3

4

5

10 SDA



GND

TXM

TXP

VDD

9

8

7

6

SCL

SDN

nIRQ

LED

Si4012

Wireless PC peripherals

Description

Silicon Laboratories’ Si4012 is a fully integrated crystal-less CMOS high-data rate

RF transmitter designed for the sub-GHz ISM band. This chip is optimized for

battery powered applications requiring low standby currents and high output

transmit power.

Patents pending

The device offers advanced radio features including continuous frequency

coverage from 27–960 MHz, adjustable output power of up to +10 dBm, and data

rates up to 100 kbaud in FSK mode. The Si4012’s high level of integration offers

reduced BOM cost while simplifying the overall system design.

Functional Block Diagram

Si4012

DIGITAL LOGIC

ANTENNA

RF ANALOG CORE

TUNE

OOK

SDA

SCL

SMBus

INTERFACE

TXP

TXM

AUTO

TUNE

DIVIDER

LPOSC

PA

FSK

SDN

nIRQ

MODULATOR

LCOSC

TX

256 BYTE

DATA FIFO

LDO

POR

BANDGAP

VDD

GND

VA

VD

DIGITAL

CONTROLLER

LED

GPIO0/XTAL

SLP

TMR

REGISTER

BANK

BATTERY

MONITOR

XTAL

OSC

Rev 0.1 7/10

Si4012

This information applies to a product under development. Its characteristics and specifications are subject to change without notice.

Si4012

2

Rev 0.1

Si4012

TABLE OF CONTENTS

Section

Page

1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

1.1. Definition of Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

3. Pin Descriptions: Si4012 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

5. Package Outline: Si4012 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

6. PCB Land Pattern: Si4012 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Rev 0.1

3

Si4012

1. Electrical Specifications

Table 1. DC Characteristics¹

Parameter

Symbol

Conditions

Min Typ Max Units

Supply Voltage Range

V_DD

1.8

—

3.6

—

V

Power Saving Modes I_Shutdown

I_Idle

Lowest current mode

100

700

nA

Register values retained, lowest current consumption idle

mode

—

TUNE Mode Current

I_Tune

Register values retained, LCOSC on fastest response to TX

mode

—

5

—

mA

TX Mode Current @

10 dBm

I_{TX_OOK}

I_{TX_FSK}

OOK, Manchester encoded

FSK

—

14.2

19.8

—

mA

Notes:

1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are

listed in the "Production Test Conditions" section on page 9.

2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section on

page 9.

Table 2. Absolute Maximum Ratings^1,2

Parameter

Symbol

Value

–0.5 to 3.9

10

Unit

V

Supply Voltage

V

I

DD

3

Input Current

mA

V

IN

4

Input Voltage

V

–0.3 to (V + 0.3)

IN

DD

Junction Temperature

Storage Temperature

Notes:

T

–40 to 90

C

OP

T

–55 to 125

STG

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended

operating conditions for extended periods may affect device reliability.

2. Handling and assembly of these devices should only be done at ESD-protected workstations.

3. All input pins besides V_DD

.

4. For GPIO pins configured as inputs.

4

Rev 0.1

Si4012

Table 3. Si4012 RF Transmitter Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

1

Frequency Range

F

27

—

960

—

MHz

ppm

RF

2

Frequency Noise (rms)

Allen deviation, measured

across 1 ms interval

0.3

Phase Noise @ 915 MHz

10 kHz offset

100 kHz offset

1 MHz offset

—

–70

–100

–105

5

—

dBc/Hz

ms

—

Frequency Tuning Time

—

Selected Frequencies in

Range of 27–960 MHz

Discrete frequencies

—

315

—

MHz

ppm

—

390

—

433.92

868

—

915

—

Carrier Frequency Accuracy

0°C ≤ T ≤ 70° C

–150

–250

–15

+150

+250

15

A

–40°C ≤ T ≤ 85° C

ppm

A

F

= 100 MHz

—

kHz

RF

0°C ≤ T ≤ 70° C

A

F

= 100 MHz

–25

–47.3

–78.8

–65.1

–108

–130

–217

–137

–229

–10

25

kHz

ppm

RF

–40°C ≤ T ≤ 85° C

A

F

= 315 MHz

47.3

78.8

65.1

108

130

217

137

229

+10

RF

0°C ≤ T ≤ 70° C

A

F

= 315 MHz

RF

–40°C ≤ T ≤ 85° C

A

F

= 433.92 MHz

RF

0°C ≤ T ≤ 70° C

A

F

= 433.92 MHz

RF

–40°C ≤ T ≤ 85° C

A

F

= 868 MHz

RF

0°C ≤ T ≤ 70° C

A

F

= 868 MHz

RF

–40°C ≤ T ≤ 85° C

A

F

= 915 MHz

RF

0°C ≤ T ≤ 70° C

A

F

= 915 MHz

RF

–40°C ≤ T ≤ 85° C

A

Frequency Error

Contribution with External

Crystal

Notes:

1. The frequency range is continuous over the specified range.

2. The frequency step size is limited by the frequency noise.

3. Optimum differential load is equal to 4 V/(11.5mA/2 * 4/PI) = 550 Therefore the antenna load resistance in parallel

with the Si4012 differential output resistance should equal 600 

Rev 0.1

5

Si4012

Table 3. Si4012 RF Transmitter Characteristics (Continued)

(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

3

Transmit Power

Maximum programmed Tx

—

10

—

dBm

power, with optimum differential

load, V > 2.2 V

DD

Minimum programmed TX

power, with optimum differential

load,

—

–13

—

dBm

V

> 2.2 V

DD

–1.0

–2.5

—

0.5

dB

Power variation vs temp and

supply, with optimum differential

load, V > 2.2 V

DD

Power variation vs temp and

supply, with optimum differential

load, V

> 1.8 V

DD

Transmit power step size

from –13 to 6.5 dBm

—

0.25

—

dB

us

OOK mode

0.34

10.7

PA Edge Ramp Rate

Programmable Range

Data Rate

OOK

FSK

0.1

—

50

kbaud

100

Notes:

1. The frequency range is continuous over the specified range.

2. The frequency step size is limited by the frequency noise.

3. Optimum differential load is equal to 4 V/(11.5mA/2 * 4/PI) = 550 Therefore the antenna load resistance in parallel

with the Si4012 differential output resistance should equal 600 

6

Rev 0.1

Si4012

Table 3. Si4012 RF Transmitter Characteristics (Continued)

(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

FSK Deviation

Max frequency deviation

Deviation resolution

Deviation accuracy

—

300

2

—

ppm

kHz

TBD

30

Max frequency deviation,

100 MHz

—

Deviation resolution,

100 MHz

200

95

Hz

Max frequency deviation,

315 MHz

kHz

Deviation resolution, 315 MHz

—

630

130

—

Hz

Max frequency deviation,

433.92 MHz

kHz

Deviation resolution,

433.92 MHz

—

868

260

—

Hz

Max frequency deviation,

868 MHz

kHz

Deviation resolution, 868 MHz

—

1740

275

—

Hz

Max frequency deviation,

915 MHz

kHz

Deviation resolution, 915 MHz

—

60

1830

—

Hz

dB

pF

OOK Modulation depth

315 MHz

2.4

—

12.5

Antenna Tuning Capacitive

Range (Differential)

Notes:

1. The frequency range is continuous over the specified range.

2. The frequency step size is limited by the frequency noise.

3. Optimum differential load is equal to 4 V/(11.5mA/2 * 4/PI) = 550 Therefore the antenna load resistance in parallel

with the Si4012 differential output resistance should equal 600 

Rev 0.1

7

Si4012

Table 4. Low Battery Detector Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Battery Voltage Measurement

Accuracy

—

2

—

%

Table 5. Optional Crystal Oscillator Characteristics

(TA = 25° C, VDD = 3.3 V, RL = 600 , unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Crystal Frequency Range

GPI0 configured as crystal

oscillator

10

—

13

MHz

Input Capacitance (GPIO0)

Crystal ESR

GPI0 configured as crystal

oscillator

5

—

9

—

50

—

pF



GPI0 configured as crystal

oscillator

Start-up Time

Crystal oscillator only,

60 mH motional arm

inductance

ms

Table 6. EEPROM Characteristics

Parameter

Conditions

Independent of number of bits

Min

Typ

Max

Units

Program Time

—

8

40

ms

changing values

Maximum Count per Counter

Write Endurance (per bit)*

Using API

1000000

—

cycles

50000

—

Note: *API uses coding technique to achieve write endurance of 1M cycles per bit.

Table 7. Low Power Oscillator Characteristics

V_DD= 1.8 to 3.6 V; T_A= –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Units

Programmable Frequency Range Programmable divider in pow- .1875

ers of 2 up to 128

—

24

MHz

Frequency Accuracy

–1

—

+1

%

8

Rev 0.1

Si4012

1.1. Definition of Test Conditions

Production Test Conditions:

 T = +25 °C

A

 V

= +3.3 VDC

DD

 TX output power measured at 100 MHz

 All RF output levels referred to the pins of the Si4012 (not the RF module)

Qualification Test Conditions:

 T = –40 to +85 °C

A

 V

= +1.8 to +3.6 VDC

DD

 All RF output levels referred to the pins of the Si4012 (not the RF module)

Rev 0.1

9

Si4012

2. Functional Description

Si4012

DIGITAL LOGIC

RF ANALOG CORE

ANTENNA

TUNE

OOK

SDA

SCL

SMBus

INTERFACE

TXP

TXM

AUTO

TUNE

DIVIDER

LPOSC

PA

FSK

SDN

nIRQ

MODULATOR

LCOSC

TX

256 BYTE

DATA FIFO

LDO

POR

BANDGAP

VDD

GND

VA

VD

DIGITAL

CONTROLLER

LED

GPIO0/XTAL

SLP

TMR

REGISTER

BANK

BATTERY

MONITOR

XTAL

OSC

Figure 1. Si4012 Functional Block Diagram

The Si4012 is a crystal wireless transmitter with The Si4012's PA output power can be configured

continuous frequency tuning over the frequency range between –13 to +10 dBm with 0.25 dB of resolution.

of 27–960 MHz. The wide operating voltage range of The PA incorporates automatic ramp-up and ramp-

1.8–3.6 V and low current consumption makes the down control to reduce unwanted spectral spreading.

Si4012 an ideal solution for battery powered

applications.

The Si4012 is designed to work with a microcontroller to

allow custom configuration of the transmitter for

The RF carrier is generated by Silicon Labs patented optimum performance. Voltage regulators are integrated

pending crystal-less oscillator technology. The device on-chip which allows for a wide operating supply voltage

2

achieves a frequency accuracy of ±150 ppm over the range of 1.8 to 3.6 V. A standard 2-pin SMB (I C) bus is

commercial temperature range of 0 to 70 °C and used to communicate with an external microcontroller.

±250 ppm over the industrial temperature range of –40

to +85 °C.

10

Rev 0.1

Si4012

3. Pin Descriptions: Si4012

GPIO0/XTAL 1

10 SDA

9 SCL

8 SDN

7 nIRQ

6 LED

GND 2

TXM 3

TXP 4

VDD 5

Si4012

Pin Number

Name

GPIO0/XTAL

GND

Description

1

2

General purpose input or crystal input

Ground

3,4

5

TXM, TXP

VDD

RF transmitter differential outputs

Supply input

9

LED

LED driver output pin

7

nIRQ

Interrupt status output, active low

Shutdown input pin, active high

8

SDN

2

9

SCL

SMB (I C) Clock input

2

10

SDA

SMB (I C) Data input/output pin

Rev 0.1

11

Si4012

4. Ordering Information

Part

Number*

Description

Package

Type

Operating

Temperature

Si4012-A0-GT Crystal-less RF Transmitter

MSOP-10

–40 to 85 °C

*Note: Add an “(R)” at the end of the device part number to denote tape and reel option.

12

Rev 0.1

Si4012

5. Package Outline: Si4012

Figure 21 illustrates the package details for the Si4012. Table 16 lists the values for the dimensions shown in the

illustration.

Figure 2. 20-Pin Quad Flat No-Lead (QFN)

Table 8. Package Dimensions

Symbol

Millimeters

Nom

Symbol

Millimeters

Nom

Min

Max

Min

Max

A

—

1.10

0.15

0.95

0.33

0.23

e

0.50 BSC

A1

0.00

0.75

0.17

0.08

L

0.40

0.60

0.80

A2

0.85

L2

0.25 BSC

b

—

q

0°

—

8°

c

D

—

aaa

bbb

ccc

ddd

0.20

0.25

0.10

0.08

3.00 BSC

4.90 BSC

3.00 BSC

E

E1

Notes:

1. All dimensions are shown in millimeters (mm).

2. Dimensioning and tolerancing per ASME Y14.5M-1994.

3. This drawing conforms to JEDEC Outline MO-187, Variation “BA.”

4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.

Rev 0.1

13

Si4012

6. PCB Land Pattern: Si4012

Figure 2 illustrates the PCB land pattern details for the Si4012. Table 17 lists the values for the dimensions shown

in the illustration.

Figure 3. PCB Land Pattern

14

Rev 0.1

Si4012

Table 9. 10-Pin MSOP Package Dimensions

Dimension

MIN

MAX

C1

E

4.40 REF

0.50 BSC

G1

X1

Y1

Z1

3.00

—

0.30

1.40 REF

—

5.80

Notes:

General

1. All dimensions shown are in millimeters (mm) unless otherwise noted.

2. Dimensioning and Tolerancing per ASME Y14.5M-1994.

3. This Land Pattern Design is based on the IPC-7351 guidelines.

4. All dimensions shown are at Maximum Material Condition (MMC).

Least Material Condition (LMC) is calculated based on a Fabrication

Allowance of 0.05 mm.

Solder Mask Design

1. All metal pads are to be non-solder mask defined (NSMD). Clearance

between the solder mask and the metal pad is to be 60 µm minimum,

all the way around the pad.

Stencil Design

1. A stainless steel, laser-cut and electro-polished stencil with

trapezoidal walls should be used to assure good solder paste release.

2. The stencil thickness should be 0.125 mm (5 mils).

3. The ratio of stencil aperture to land pad size should be 1:1.

Card Assembly

1. A No-Clean, Type-3 solder paste is recommended.

2. The recommended card reflow profile is per the JEDEC/IPC J-STD-

020 specification for Small Body Components.

Rev 0.1

15

Si4012

CONTACT INFORMATION

Silicon Laboratories Inc.

400 West Cesar Chavez

Austin, TX 78701

Tel: 1+(512) 416-8500

Fax: 1+(512) 416-9669

Toll Free: 1+(877) 444-3032

Please visit the Silicon Labs Technical Support web page:

https://www.silabs.com/support/pages/contacttechnicalsupport.aspx

and register to submit a technical support request.

The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.

Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from

the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features

or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, rep-

resentation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation conse-

quential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to

support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where per-

sonal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap-

plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.

Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.

Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.

16

Rev 0.1


型号：	SI4012
厂家：	SILICON
描述：	CRYSTAL-LESS RF TRANSMITTER 无晶体射频发射器晶体射频
文件：	总16页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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