SSF7510 [SILIKRON]

Power switching application; 电源开关的应用


型号：	SSF7510
厂家：	SILIKRON SEMICONDUCTOR CO.,LTD.
描述：	Power switching application 电源开关的应用开关电源开关
文件：	总5页 (文件大小：330K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF7510

Feathers:

ID=75A

Advanced trench process technology

BV=75V

Special designed for Convertors and power controls

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Avalanche Energy 100% test

Rdson=10mohm

Description:

The SSF7510 is a new generation of middle voltage and

high current N–Channel enhancement mode trench power

MOSFET. This new technology increases the cell density

and reduces the on-resistance; its typical Rdson can reduce

to 6.8mohm.

Application:

Power switching application

SSF7510 TOP View (TO220)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@T_c=25ْC

I_D@T_c=100ْC

I_DM

Continuous drain current,VGS@10V

Pulsed drain current

Power dissipation

①

300

150

2.0

P_D@T_C=25ْC

W/ْC

Linear derating factor

Gate-to-Source voltage

V_GS

dv/dt

E_AS

E_AR

T_J

±20

Peak diode recovery voltage

Single pulse avalanche energy

Repetitive avalanche energy

Operating Junction and

v/ns

②

480

TBD

–55 to +150

Cْ

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Min.

—

Typ.

0.83

—

Max.

—

Units

R_θJC

R_θJA

Junction-to-case

Junction-to-ambient

Cْ /W

—

Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)

Parameter

Min. Typ.

Max. Units

Test Conditions

V_GS=0V,I_D=250μA

V_GS=10V,I_D=40A

V_DS=V_GS,I_D=250μA

V_DS=5V,I_D=30A

V_DS=75V,V_GS=0V

V_DS=75V,

BV_DSS

R_DS(on)

V_GS(th)

g_fs

Drain-to-Source breakdown voltage

Static Drain-to-Source on-resistance

Gate threshold voltage

—

2.0

—

Ω

0.007 0.01

2.7

—

4.0

—

Forward transconductance

—

I_DSS

Drain-to-Source leakage current

μA

—

V_GS=0V,T_J=150ْC

I_GSS

Gate-to-Source forward leakage

100

nA V_GS=20V

©Silikron Semiconductor CO.,LTD.

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SSF7510

Gate-to-Source reverse leakage

Total gate charge

—

-100

—

V_GS=-20V

Q_g

I_D=30A

V_DD=30V

V_GS=10V

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source charge

Gate-to-Drain("Miller") charge

Turn-on delay time

Rise time

18.2

15.6

70.5

13.8

3150

300

240

V_DD=30V

I_D=2A ,R_L=15Ω

R_G=2.5Ω

t_d(off)

t_f

Turn-Off delay time

Fall time

V_GS=10V

C_iss

C_oss

C_rss

Input capacitance

V_GS=0V

V_DS=25V

f=1.0MHZ

Output capacitance

Reverse transfer capacitance

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min.

Typ.

—

Max.

Units

Test Conditions

MOSFET symbol

showing the

I_S

—

integral reverse

p-n junction diode.

Pulsed Source Current

I_SM

—

300

(Body Diode)

①

V_SDDiode Forward Voltage

—

－

—

1.3

—

T_J=25ْC,I_S=40A,V_GS=0V ③

T_J=25ْC,I_F=75A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-on Time

di/dt=100A/μs ③

Q_rr

t_on

107

—

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating; pulse width limited by max junction temperature.

② Test condition: L =0.3mH, ID = 57A, VDD = 47V

③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C

EAS test circuits:

Gate charge test circuit:

dss

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SSF7510

Switch Time Test Circuit：

Switch Waveforms:

Transfer Characteristic

Capacitance

On Resistance vs Junction Temperature

Breakdown Voltage vs Junction Temperature

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SSF7510

Gate Charge

Source-Drain Diode Forward Voltage

Safe Operation Area

Max Drain Current vs Junction Temperature

Transient Thermal Impedance Curve

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SSF7510

TO220 MECHANICAL DATA:

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SSF7510 [SILIKRON]

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