STD90GKXXB [SIRECTIFIER]
Thyristor-Diode Modules;
| 型号： | STD90GKXXB |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Thyristor-Diode Modules |
| 文件： | 总4页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD90GKXXB
Thyristor-Diode Modules
Tolerance: +0.5mm
-
Type
VRSM
VDSM
V
VRRM
VDRM
V
Dimensions in mm (1mm=0.0394")
STD90GK08B
STD90GK12B
STD90GK14B
STD90GK16B
STD90GK18B
900
800
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
180
90
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1700
1800
1540
1640
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
14450
13500
11850
11300
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
repetitive, IT=250A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.45A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
10
5
PGM
0.5
10
W
V
PGAV
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
g
Md
Typ.
Weight
108
P1
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©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
STD90GKXXB
Thyristor-Diode Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=300A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
5
mA
V
IRRM, IDRM
VT, VF
VTO
1.74
0.85
3.2
V
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
2.5
2.6
V
VGT
IGT
VD=6V;
TVJ=25oC
150
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
450
200
2
mA
mA
us
tgd
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
185
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
170
45
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.3
0.15
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.5
0.25
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
APPLICATIONS
ADVANTAGES
FEATURES
* DC motor control
* Space and weight savings
* International standard package
* Copper base plate
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
* Glass passivated chips
* Isolation voltage 3600 V~
* Reduced protection circuits
* UL file NO.310749
* RoHS compliant
P2
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
STD90GKXXB
Thyristor-Diode Modules
150
150
W
0.7
0.5 0.4
0.8
0.6
0.3
R
th(j-a)
rec.
180
1
.
W
sin.
180
/2 STD
B
90
/2 SDT90B
1
.
120
125
125
1
90
60
1.2
100
75
100
75
cont.
30
1.4
1.6
r ec.
15
.
1 8
2
50
50
2.5
3
4
25
25
K/W
P
TAV
P
TAV
0
0
Ta
100
OC
I
TAV
25
50
0
A
100
200
200
50
150
0
75
Fig.1L Power dissipation per thyristor vs. on-state current
F
ig.1R Power dissipation per thyristor vs. ambient temp
300
300
70
Tc
0 15 0.1 0.05
0.2
0.25
.
Rth(c-a)
.
W
1
1
STD90
B
W
.
90B
SDT
3
0
.
81
0.35
0.4
200
200
0.5
92
0.6
0.7
0 8
.
103
1
100
100
1.5
2
114
OC
Pvtot
0
Pvtot
0
K/W
125
OC 150
I
RMS
0
150
0
50
100
A
Ta
50
100
Fig.2L Power dissipation per module vs. rms current
Fig .2R Power dissipation per module vs. case temp
600
70
Tc
600
W
0.04
0.1 0.08 0.06
Rth(c-a)
.
.
0.12
2
2
STD90B
SDT90B
W
.
014
500
500
81
0.16
0.2
R
400
300
200
400
300
200
L
0.25
0.3
92
0.35
0.4
103
114
.
0 5
0.6
0.8
100
100
Pvtot
0
K/W
Pvtot
OC
0
125
OC
100
0
Ta
0
150
100
150
50
ID
50
A
Fig.3L Power dissipation of two modules vs. direct current
Fi
g
.3R Power dissipation of two modules vs. case temp
P3
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
STD90GKXXB
Thyristor-Diode Modules
750
750
W
76
Tc
0.1
0.08 0.06
0.04
0.02
Rth(c-a)
.
3
3
STD90B
SDT90B
W
0.12
.
0.14
0.17
86
w
3
500
250
500
.2
0
B
6
96
0.2
5
0.3
106
115
0.35
0.4
0.5
250
0.6
K/W
OC
Pvtot
0
Pvtot
0
125
OC
RMS 50
0 ID I
Ta
100
A
250
200
150
0
50
100
150
Fig.4L Power dissipation of three modules vs. direct and rms current
Fig.4R Power dissipation of three modules vs. case temp
0.6
1000
.
.
1
1
/2
/2
.
STD90B
STD90B
500A
200A
uC
K/W
0.5
Zth(j-s)
1
/2
1
/2
.
SDT
90B
SDT
90B
100A
50A
20A
0.4
0.3
0.2
0.1
I
TM=
Zth(j-c)
100
Qrr
10
Tvj=125oC
Zth
0
-diT/dt
0.001
10
s
1
10
A/us 100
0.01
0.1
1
100
t
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
2
400
1
.
/2
typ.
STD90B
I
I
T(OV)
1
.
max.
/2
STD90B
A
1
.
/2
SDT
90B
TSM
.
1
/2
90B
SDT
1.6
300
I
I
TSM(25 OC) =1600A
TSM(125OC)=1450A
1.4
1.2
200
100
.
0 VRRM
.
0.5 VRRM
1
0.8
0.6
.
1 VRRM
Tvj=25OC
Tvj=125OC
IT
- -
0
0.4
0
Vt 0.5
Fig.7 On-state charactristics
1
1.5
2
V 2.5
t
10
100
1
ms 1000
Fig.8 Surge overload current vs. time
P4
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
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