AM83135-005 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-005 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-005
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT 5.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
=
hermetically sealed
ORDER CODE
BRANDING
83135-5
AM83135-005
DESCRIPTION
PIN CONNECTION
The AM83135-005 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for
military and other high reliability applications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
case
Symbol
PDISS
IC
Parameter
Value
Unit
W
A
40
1.8
Power Dissipation*
Device Current*
(TC ≤ 100°C)
VCC
TJ
Collector-Supply Voltage*
34
V
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
°
C
TSTG
65 to +200
−
THERMAL DATA
°
Junction-Case Thermal Resistance*
3.75
RTH(j-c)
C/W
*Applies only to rated RF amplifier operation
1/4
August 23, 1996
AM83135-005
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
STATIC
case
Value
Typ.
—
Symbol
Test Conditions
Unit
Min.
50
Max.
—
BVCBO
BVEBO
BVCER
ICES
V
V
IC = 4 mA
IE = 2 mA
IC = 4 mA
VCE = 30 V
VCE = 5 V
IE = 0 mA
IC = 0 mA
3.5
50
—
—
—
—
—
—
V
RBE = 10 Ω
—
2.0
—
mA
—
hFE
10
IC = 500 mA
DYNAMIC
Value
Typ.
Symbol
Test Conditions
Unit
Min.
5.0
27
Max.
—
POUT
hc
6.0
—
W
%
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
PIN = 1.5 W
VCC = 30 V
VCC 30 V
—
POUT 5.0 W
=
=
PG
5.2
6.4
—
dB
POUT 5.0 W
VCC 30 V
=
=
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
2/4
AM83135-005
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
L
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZIN
H
ZCL
ZCL
L
FREQ.
H
ZIN (Ω)
ZCL (Ω)
9.0 j 22.0
48.0 + j 11.5
43.0 + j 9.0
30.0 + j 3.0
21.5 + 0.0
L = 2.7 GHz
ù = 2.9 GHz
9.0 j 23.0
12.5 + j 25.0
20.0 + j 25.0
22.0 + j 22.5
M
3.1 GHz
=
PIN = 1.5 W
VCC = 30 V
Normalized to 50 ohms
ù = 3.3 GHz
H = 3.5 GHz
16.0 − j 3.0
TEST CIRCUIT
All dimensions are in inches.
Substrate Material: .025 tick Al 0 (Er = 9.6)
2
3
C1
:
100 pF Chip Capacitor
(Note: Mounted on its thin side)
1500 pF RF Feedthru
L1
L2
:
:
No. 32 Wire, 2 Turns 1/16” I.D.
Printed Choke
C2
C3
:
:
100 mF Electrolytic
3/4
AM83135-005
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS Doc. No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
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