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MJD2955_02 [STMICROELECTRONICS]

COMPLEMENTARY POWER TRANSISTORS; 互补功率晶体管
MJD2955_02
型号： MJD2955_02
厂家： ST    ST
描述：

COMPLEMENTARY POWER TRANSISTORS
互补功率晶体管

晶体 晶体管
文件： 总6页 (文件大小：188K)
中文：  中文翻译
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MJD2955  
MJD3055  
®
COMPLEMENTARY POWER TRANSISTORS  
■
■
STMicroelectronics PREFERRED  
SALESTYPES  
SURFACE-MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
■
ELECTRICALLY SIMILAR TO MJE2955T  
AND MJE3055T  
3
APPLICATIONS  
1
■
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER  
DPAK  
TO-252  
(Suffix "T4")  
DESCRIPTION  
The MJD2955  
complementary PNP-NPN pairs. They are  
manufactured using Epitaxial Base technology for  
cost-effective performance.  
and  
MJD3055  
form  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
MJD3055  
MJD2955  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
70  
V
V
60  
5
V
10  
A
IB  
Base Current  
6
20  
A
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 oC  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP type voltage and current values are negative.  
1/6  
February 2002  
MJD2955 / MJD3055  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
Max  
6.25  
100  
oC/W  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 70 V  
Min.  
Typ.  
Max.  
Unit  
ICEX  
Collector Cut-off  
Current (VBE = -1.5 V) VCE = 70 V  
20  
2
µA  
mA  
o
Tj = 150 C  
ICBO  
ICEO  
IEBO  
Collector Cut-off  
Current (IE = 0)  
VCB = 70 V  
VCB = 70 V  
20  
2
µA  
mA  
o
Tj = 150 C  
Collector Cut-off  
Current (IB = 0)  
VCE = 30 V  
50  
µA  
mA  
V
Emitter Cut-off Current VEB = 5 V  
(IC = 0)  
0.5  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 30 mA  
60  
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 4 A  
IC = 10 A  
IB = 0.4 A  
IB = 3.3 A  
1.1  
8
V
V
VBE(on)  
hFE  
Base-Emitter Voltage  
DC Current Gain  
IC = 4 A  
VCE = 4 V  
1.8  
V
IC = 4 A  
IC = 10 A  
VCE = 4 V  
VCE = 4 V  
20  
5
100  
fT  
Transition Frequency  
IC = 0.5 A VCE = 10 V f = 500 KHz  
2
MHz  
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
For PNP type voltage and current values are negative.  
Safe Operating Area  
Derating Curves  
2/6  
MJD2955 / MJD3055  
DC Current Gain (NPN type)  
DC Current Gain (PNP type)  
DC Transconductance (NPN type)  
DC Transconductance (PNP type)  
Collector-Emitter Saturation Voltage (NPN type)  
Collector-Emitter Saturation Voltage (PNP type)  
3/6  
MJD2955 / MJD3055  
Base-Emitter Saturation Voltage (NPN type)  
Base-Emitter Saturation Voltage (PNP type)  
Transition Frequency (NPN type)  
Transition Frequency (PNP type)  
4/6  
MJD2955 / MJD3055  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
TYP.  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
5/6  
MJD2955 / MJD3055  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
6/6  

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