STB12NM50T4 [STMICROELECTRONICS]
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET; N沟道500V - 0.3W - 12A TO- 220 / TO- 220FP / I PAK的MDmesh ]功率MOSFET
| 型号： | STB12NM50T4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET |
| 文件： | 总14页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-CHANNEL 550V @ Tj -0.30Ω - 12A TO-220/FP/D²/I²PAK
max
Zener-Protected SuperMESH™MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
DSS
R
I
D
DS(on)
(@Tj
)
max
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550 V
550 V
550 V
550 V
< 0.35 Ω
< 0.35 Ω
< 0.35 Ω
< 0.35 Ω
12 A
12 A
12 A
12 A
3
3
2
2
1
1
■ TYPICAL R (on) = 0.30 Ω
DS
TO-220FP
TO-220
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ 100% AVALANCHE TESTED
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
1
3
2
1
2
2
D PAK
I PAK
Figure 2: Internal Schematic Diagram
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STB12NM50T4
STB12NM50-1
STP12NM50
MARKING
B12NM50
B12NM50
P12NM50
P12NM50FP
PACKAGE
D²PAK
PACKAGING
TAPE & REEL
TUBE
I²PAK
TO-220
TO-220FP
TUBE
STP12NM50FP
TUBE
Rev. 2
March 2005
1/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
STB12NM50
STB12NM50
STP12NM50
STP12NM50FP
V
Gate- source Voltage
± 30
V
A
GS
I
Drain Current (continuous) at T = 25°C
12
7.5
48
12 (*)
7.5 (*)
48 (*)
35
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
160
1.28
--
W
C
Derating Factor
0.28
W/°C
V
V
ISO
Insulation Winthstand Voltage (DC)
Peak Diode Recovery voltage slope
2500
dv/dt (1)
15
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤12A, di/dt ≤400A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/ D²PAK /
I²PAK
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.78
3.57
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
6
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
400
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source Breakdown
Voltage
I
D
= 250 µA, V
= 0
500
V
(BR)DSS
GS
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125°C
1
10
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 30 V
± 100
nA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 50 µA
3
5
V
Gate Threshold Voltage
4
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I = 6 A
0.30
0.35
Ω
DS(on
D
2/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
= 15 V , I = 6 A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
V
5.5
S
DS
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25 V, f = 1 MHz, V = 0
1000
180
25
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(3) Equivalent Output
V
V
= 0 V, V = 0 to 400 V
90
pF
OSS eq
.
GS
DS
Capacitance
t
Turn-on Delay Time
Rise Time
= 250 V, I = 6 A,
20
10
ns
ns
d(on)
DD
D
t
r
R = 4.7 Ω, V = 10 V
G GS
(see Figure 17)
Q
V
V
= 400 V, I = 12 A,
= 10 V
28
8
18
39
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
g
DD
D
Q
gs
gd
GS
Q
(see Figure 20)
Rg
Gate Input Resistance
f = 1MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
Ω
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
12
48
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 12 A, V
= 0
GS
Forward On Voltage
1.5
V
SD
SD
t
rr
= 12 A, di/dt = 100 A/µs
= 100V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
270
2.23
16.5
ns
µC
A
SD
Q
V
DD
(see Figure 18)
rr
I
RRM
t
Q
I
V
= 12 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
340
3
18
ns
µC
A
rr
SD
= 100V, T = 150°C
rr
DD
j
I
(see Figure 18)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80% V
.
DSS
oss eq.
oss
DS
3/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 3: Safe Operating Area For TO-220/
D²PAK/I²PAK
Figure 6: Thermal Impedance TO-220/D²PAK/
I²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
4/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 12: Static Drain-Source On Resistance
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Normalized On Resistance vs Tem-
perature
5/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 15: Source-Drain Forward Characteris-
tics
6/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Figure 16: Unclamped Inductive Load Test Cir-
Figure 19: Unclamped Inductive Wafeform
cuit
Figure 17: Switching Times Test Circuit For
Resistive Load
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
9/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
1
10/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
11/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Table 9: Revision History
Date
Revision
Description of Changes
27-Sep-2004
09-Mar-2005
1
2
Complete version
New Stylesheet
13/14
STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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14/14
相关型号：
STB12NM60N
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
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STB12NM60N-1
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
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