STD7N52K3 [STMICROELECTRONICS]
N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET; N沟道525 V， 0.84欧姆， 6.2 A， D2PAK ， DPAK ， TO- 220FP ， TO- 220 SuperMESH3功率MOSFET
| 型号： | STD7N52K3 |
| 厂家： | 
ST |
| 描述： | N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET |
| 文件： | 总18页 (文件大小：1197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB7N52K3, STD7N52K3
STF7N52K3, STP7N52K3
N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
Pw
3
3
1
1
STB7N52K3 525 V < 0.98 Ω
STD7N52K3 525 V < 0.98 Ω
6.2 A
6.2 A
90 W
90 W
DPAK
D²PAK
STF7N52K3 525 V < 0.98 Ω 6.2 A (1) 25 W
STP7N52K3 525 V < 0.98 Ω
6.2 A
90 W
1. Limited by package
3
■ 100% avalanche tested
3
2
1
2
TO-2201
■ Extremely high dv/dt capability
■ Gate charge minimized
TO-220FP
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
Figure 1.
Internal schematic diagram
characteristics
D(2)
■ Zener-protected
Application
■ Switching applications
G(1)
Description
SuperMESH3™ is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH™
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
7N52K3
7N52K3
7N52K3
7N52K3
D²PAK
DPAK
Tape and reel
Tape and reel
Tube
TO-220FP
TO-220
Tube
September 2009
Doc ID 14896 Rev 2
1/18
www.st.com
18
Contents
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220 DPAK D²PAK TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
525
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
6.2
4.5
6.2 (1)
4.5 (1)
24.8 (1)
25
A
ID
A
(2)
IDM
24.8
90
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
6.2
A
Single pulse avalanche energy
EAS
100
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50V)
Gate source ESD(HBM-C = 100 pF,
VESD(G-S)
2500
12
V
R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220 DPAK D²PAK TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1.39
50
5
°C/W
°C/W
°C/W
30
62.5
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
Doc ID 14896 Rev 2
3/18
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
525
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
3
3.75
0.84
4.5
VGS = 10 V, ID = 3.1 A
0.98
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
737
110
10
pF
Output capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
-
-
pF
pF
Reverse transfer
capacitance
Equivalent
capacitance time
related
(1)
Co(tr)
-
198
pF
VDS = 0 to 520 V, VGS = 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
Co(er)
-
-
126
4
-
-
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6 A,
VGS = 10 V
34
4.4
15
nC
nC
nC
-
-
(see Figure 20)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
11
22
30
22
ns
ns
ns
ns
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
-
Turn-off-delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
6.2
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
24.8
(2)
VSD
Forward on voltage
ISD = 6 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
260
1
ns
nC
A
ISD = 6 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 60 V (see Figure 24)
IRRM
11
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
338
1.4
13
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
Gate-source breakdown
voltage
(1)
BVGSO
Igs= 1 mA (open drain)
30
-
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Doc ID 14896 Rev 2
5/18
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
AM04999v1
I
D
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
10
10µs
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for DPAK
Figure 5.
Thermal impedance for DPAK
AM04997v1
I
D
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
10µs
10
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
Thermal impedance for TO-220FP
AM04998v1
I
D
(A)
Tj=150°C
Tc=25°C
Sinlge pulse
10
10µs
100µs
1
1ms
10ms
0.1
0.01
10
VDS(V)
0.1
1
100
6/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM05000v1
AM05401v1
I
D
(A)
I
D
(A)
8
V
GS=10V
5
7
4
3
2
6
5
4
3
2
6V
1
0
1
0
5V
DS(V)
2
4
V
8
VGS(V)
0
2
0
4
6
Figure 10. Normalized BV
vs temperature Figure 11. Static drain-source on resistance
DSS
AM05402v1
AM05403v1
BVDSS
(norm)
R
DS(on)
(Ω)
I
D
=3.1A
0.95
0.90
1.10
1.05
V
GS=10V
0.85
0.80
0.75
0.70
1.00
0.95
0.90
-50
-25
0
25 50 75
150 T
J(°C)
0
6
ID(A)
100 125
1
5
2
3
4
Figure 12. Output capacitance stored energy Figure 13. Capacitance variations
AM05405v1
AM05404v1
E
oss
C
(µJ)
(pF)
4.0
1000
100
Ciss
3.5
3.0
2.5
2.0
1.5
1.0
Coss
Crss
10
1
0.5
0
0
300
0.1
100
100
200
400
500
VDS(V)
1
10
VDS(V)
Doc ID 14896 Rev 2
7/18
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
AM05406v1
AM05408v1
V
GS
RDS(on)
(V)
(norm)
V
GS
V
DS
V
DD=420V
400
350
300
12
2.5
ID=6A
10
8
2.0
250
200
1.5
1.0
6
150
100
50
4
2
0
0.5
0.0
0
10
20
-50
-25
25
35
Q
g(nC)
25
75
TJ(°C)
0
5
15
30
0
50
100
125
150
Figure 16. Normalized gate threshold voltage Figure 17. Maximum avalanche energy vs
vs temperature temperature
AM05407v1
AM05409v1
V
GS(th)
E
(mJ)
AS
(norm)
1.10
I
D
=6.2 A
100
90
V
DD=50 V
80
1.00
0.90
70
60
50
40
30
0.80
20
10
0
0.70
-50
0
120
20 40 60 80 100 140T
-25
0
25 50 75
T
J(°C)
J(°C)
100125 150
Figure 18. Source-drain diode forward
characteristics
AM05410v1
VSD
(V)
TJ=-50°C
0.9
0.8
TJ
=25°C
0.7
0.6
0.5
TJ=150°C
0.4
0.3
0
1
2
3
4
5
6
7
8
ISD(A)
8/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped Inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 14896 Rev 2
9/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
Doc ID 14896 Rev 2
11/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
TO-220FP mechanical data
mm.
Typ
inch
Typ.
Dim.
Min.
4.40
2.5
Max.
4.60
2.7
Min.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.95
2.40
10
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16
0.630
28.6
9.80
2.9
30.6
10.60
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
15.90
9
16.40
9.30
3.2
3
L3
L6
L7
Dia
1
2 3
L5
L2
L4
7012510-I
12/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
D²PAK (TO-263) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
Doc ID 14896 Rev 2
13/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
14/18
Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Package mechanical data
5
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
Doc ID 14896 Rev 2
15/18
Package mechanical data
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
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Doc ID 14896 Rev 2
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Revision history
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
07-Jul-2008
10-Sep-2009
1
2
First release
Document status promoted from preliminary data to datasheet.
Doc ID 14896 Rev 2
17/18
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
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