STP5NA80 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; N - 沟道增强模式快速功率MOS晶体管
| 型号： | STP5NA80 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 文件： | 总10页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP5NA80
STP5NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STP5NA80
STP5NA80FI
800 V
800 V
< 2.4 Ω
< 2.4 Ω
4.7 A
2.8 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 1.8 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
3
3
2
2
1
1
REDUCED THRESHOLD VOLTAGE SPREAD
TO-220
ISOWATT220
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with
a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP5NA80
STP5NA80FI
VDS
VDG R
VGS
ID
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
800
800
± 30
V
V
V
4.7
3
2.8
1.8
A
ID
A
IDM(•)
Ptot
19
125
1
19
A
Total Dissipation at Tc = 25 oC
45
W
W/oC
V
oC
oC
Derating Factor
0.36
2000
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
November 1996
STP5NA80/FI
THERMAL DATA
TO-220
ISOWATT220
Rthj-case Thermal Resistance Junction-case
Max
1
2.78
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
4.7
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
110
4.5
3
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
800
V
IDSS
IGSS
VDS = Max Rating
25
250
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
3.75
2.4
Unit
V
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
2.25
RDS(on) Static Drain-source On VGS = 10V ID = 2.5 A
Resistance
1.8
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
4.7
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 2.5 A
2.7
5.2
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1250
140
35
1700
190
50
pF
pF
pF
2/10
STP5NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 400 V ID = 2.5 A
40
100
55
135
ns
ns
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 640 V ID = 5 A
180
A/µs
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V ID = 5 A VGS = 10 V
55
8
24
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V ID = 5 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
75
25
110
100
35
150
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
4.7
19
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 4.7 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A di/dt = 100 A/µs
VDD = 100 V
(see test circuit, figure 5)
800
15.2
38
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
STP5NA80/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
Derating Curve For TO-220
Output Characteristics
4/10
STP5NA80/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
STP5NA80/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STP5NA80/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/10
STP5NA80/FI
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/10
STP5NA80/FI
ISOWATT220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.4
F
0.75
1.15
1.15
4.95
2.4
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
Ø
1 2 3
L4
L2
P011G
9/10
STP5NA80/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
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10/10
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