STP9NK60ZD [STMICROELECTRONICS]
N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET; N沟道600V - 0.85 ？ - 7A的TO-220 / TO- 220FP / DPAK SuperFREDMesh MOSFET的
| 型号： | STP9NK60ZD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| 文件： | 总12页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP9NK60ZD - STF9NK60ZD
STB9NK60ZD
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK
SuperFREDMesh™ MOSFET
ADVANCED DATA
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP9NK60ZD
STF9NK60ZD
STB9NK60ZD
600 V < 0.95 Ω
600 V < 0.95 Ω
600 V < 0.95 Ω
7 A
7 A
7 A
125 W
30 W
125 W
■
■
■
■
■
■
TYPICAL R (on) = 0.85 Ω
DS
3
VERY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
LOW INTRINSIC CAPACITANCES
2
1
TO-220
TO-220FP
FAST INTERNAL RECOVERY DIODE
3
1
2
D PAK
DESCRIPTION
The SuperFREDMesh™ series associates all ad-
vantages of reduced on-resistance, zener gate pro-
tection and very high dv/dt capability with a Fast
body-drain recovery diode. Such series comple-
ments the “FDmesh™” Advanced Technology.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HID BALLAST
■
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS
ORDERING INFORMATION
SALES TYPE
MARKING
P9NK60ZD
F9NK60ZD
B9NK60ZD
PACKAGE
PACKAGING
TUBE
STP9NK60ZD
STF9NK60ZD
TO-220
TO-220FP
TUBE
2
STB9NK60ZDT4
TAPE & REEL
D PAK
January 2004
1/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2
TO-220 / D PAK
TO-220FP
V
Drain-source Voltage (V = 0)
600
600
± 30
V
V
DS
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuos) at T = 25°C
7
4.3
28
125
1
7 (*)
4.3 (*)
28 (*)
30
A
D
D
C
I
Drain Current (continuos) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.24
W/°C
V
V
4000
15
Gate source ESD (HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
ESD(G-S)
dv/dt (1)
V/ns
V
V
ISO
-
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤7A, di/dt ≤500A/µs, V ≤ V , T = 25°C
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
TO-220FP
Unit
2
D PAK
Rthj-pcb
Thermal Resistance Junction-pcb Max
30
1
°C/W
(When mounted on minimum Footprint)
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.16
°C/W
°C/W
°C
62.5
300
T
Maximum Lead Temperature For Soldering
Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
7
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
235
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown Igs=± 1mA (Open Drain)
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1mA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 100µA
Gate Threshold Voltage
2.5
3.5
4.5
V
GS(th)
DS
GS
D
R
DS(on)
Static Drain-source On
Resistance
= 10V, I = 3.5 A
0.85
0.95
Ω
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
= 15 V I = 3.5 A
5.3
S
fs
DS
, D
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, f = 1 MHz, V = 0
1110
135
30
pF
pF
pF
iss
GS
oss
C
rss
C
oss eq.
(3)
V
GS
= 0V, V = 0V to 480V
72
pF
Equivalent Output Capacitance
DS
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
= 300 V, I = 3.5 A
22
17
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
Q
V
V
= 480V, I = 7 A,
= 10V
53
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
41
8.7
21
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 300 V, I = 3.5 A
42
15
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
= 480V, I = 7 A,
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
11
8
20
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
7
28
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 7 A, V = 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
rr
= 7 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
150
663
8.5
ns
nC
A
Q
V
= 30V, T = 25°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
V
= 7 A, di/dt = 100A/µs
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
194
935
9.6
ns
nC
A
rr
= 30V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Safe Operating Area For TO-220/D²PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D²PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
10/12
1
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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12/12
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