STP9NK65ZFP [STMICROELECTRONICS]

N-CHANNEL 650V - 1ohm - 7A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET; N沟道650V - 1欧姆 - 7A TO- 220 / TO- 220FP齐纳保护SuperMESH⑩Power MOSFET


型号：	STP9NK65ZFP
厂家：	ST
描述：	N-CHANNEL 650V - 1ohm - 7A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1欧姆 - 7A TO- 220 / TO- 220FP齐纳保护SuperMESH⑩Power MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
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STP9NK65Z

STP9NK65ZFP

N-CHANNEL 650V - 1Ω - 7A TO-220/TO-220FP

Zener-Protected SuperMESH™Power MOSFET

TARGET DATA

TYPE

DSS

DS(on)

STP9NK65Z

STP9NK65ZFP

650 V

< 1.2 Ω

7 A

110 W

30 W

■

TYPICAL R (on) = 1.0 Ω

EXTREMELY HIGH dv/dt CAPABILITY

IMPROVED ESD CAPABILITY

100% AVALANCHE RATED

GATE CHARGE MINIMIZED

VERY LOW INTRINSIC CAPACITANCES

VERY GOOD MANUFACTURING

REPEATIBILITY

TO-220

TO-220FP

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■

ORDERING INFORMATION

SALES TYPE

MARKING

P9NK65Z

PACKAGE

TO-220

PACKAGING

TUBE

STP9NK65Z

STP9NK65ZFP

P9NK65ZFP

TO-220FP

TUBE

July 2003

1/7

STP9NK65 - STP9NK65ZFP

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP9NK65Z

STP9NK65ZFP

Drain-source Voltage (V = 0)

650

± 30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

7 (*)

4.4 (*)

28 (*)

Drain Current (continuous) at T = 100°C

4.4

( )

Drain Current (pulsed)

Total Dissipation at T = 25°C

110

0.88

TOT

Derating Factor

0.24

W/°C

V/ns

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

3500

TBD

ESD(G-S)

dv/dt (1)

ISO

2500

stg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

( ) Pulse width limited by safe operating area

(1) I ≤TBD, di/dt ≤TBD, V ≤ V , T ≤ T

JMAX.

(BR)DSS

(*) Limited only by maximum temperature allowed

THERMAL DATA

TO-220

TO-220FP

Rthj-case

Rthj-amb

Thermal Resistance Junction-case Max

1.14

4.2

°C/W

°C

Thermal Resistance Junction-ambient Max

62.5

300

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T max)

Single Pulse Avalanche Energy

TBD

(starting T = 25 °C, I = I , V = 50 V)

GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Igs=± 1mA (Open Drain)

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

GSO

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-

effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage

of external components.

2/7

STP9NK65 - STP9NK65ZFP

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 1 mA, V = 0

650

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

= Max Rating, T = 125 °C

µA

DSS

Drain Current (V = 0)

Gate-body Leakage

= ± 20V

±10

µA

GSS

Current (V = 0)

= V , I = 100µA

Gate Threshold Voltage

3.75

1.0

4.5

1.2

GS(th)

Static Drain-source On

Resistance

= 10V, I = 3 A

Ω

DS(on)

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

= 8 V I = 3 A

TBD

, D

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

TBD

iss

oss

rss

(3) Equivalent Output

Capacitance

= 0V, V = 0V to 480V

TBD

oss eq.

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

= 325 V, I = 3 A

= 4.7Ω V = 10 V

TBD

d(on)

(Resistive Load see, Figure 3)

= 520V, I = 6 A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

TBD

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-off Delay Time

Fall Time

= 325 V, I = 3 A

TBD

d(off)

R = 4.7Ω V = 10 V

G GS

(Resistive Load see, Figure 3)

= 520 V, I = 6 A,

Off-voltage Rise Time

Fall Time

Cross-over Time

TBD

r(Voff)

= 4.7Ω, V = 10V

(Inductive Load see, Figure 5)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

(1)

= 7 A, V = 0

Forward On Voltage

1.6

= 6 A, di/dt = 100A/µs

= 35V, T = 150°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

TBD

µC

RRM

(see test circuit, Figure 5)

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0 to 80%

oss DS

oss eq.

DSS

3/7

STP9NK65 - STP9NK65ZFP

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/7

STP9NK65 - STP9NK65ZFP

TO-220 MECHANICAL DATA

inch

DIM.

MIN.

4.40

1.23

2.40

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

TYP.

MAX.

0.181

0.051

0.107

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

Dia.

P011C

5/7

STP9NK65 - STP9NK65ZFP

TO-220FP MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

TYP

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

4.4

2.5

0.45

0.75

1.15

4.95

2.4

1.5

5.2

2.7

10.4

0.630

28.6

9.8

2.9

15.9

30.6

10.6

3.6

1.126

.0385

0.114

0.626

0.354

0.118

1.204

0.417

0.141

0.645

0.366

0.126

16.4

9.3

3.2

1 2 3

6/7

STP9NK65 - STP9NK65ZFP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

7/7

STP9NK65ZFP [STMICROELECTRONICS]

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