STPS1L20MF [STMICROELECTRONICS]

Low drop power Schottky rectifier in flat package; 低压降功率肖特基整流器扁平封装
STPS1L20MF
型号: STPS1L20MF
厂家: ST    ST
描述:

Low drop power Schottky rectifier in flat package
低压降功率肖特基整流器扁平封装

文件: 总7页 (文件大小:92K)
中文:  中文翻译
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STPS1L20MF  
Low drop power Schottky rectifier in flat package  
Main product characteristics  
A
IF(AV)  
VRRM  
1 A  
20 V  
Tj (max)  
VF (max)  
150° C  
0.37 V  
K
STmite flat  
(DO222-AA)  
Features and benefits  
Very low profile package: 0.85 mm  
Description  
Backward compatible with standard STmite  
Single Schottky rectifier suited for switch mode  
power supplies and high frequency DC to DC  
converters.  
footprint  
Very small conduction losses  
Negligible switching losses  
Extremely fast switching  
Packaged in STmite flat, this device is intended  
for use in low voltage, high frequency inverters,  
free wheeling and polarity protection applications.  
Due to the very small size of the package this  
device fits battery powered equipment (cellular,  
notebook, PDA’s, printers) as well as chargers  
and PCMCIA cards.  
Low forward voltage drop for higher efficiency  
and extended battery life  
Low thermal resistance  
Avalanche capability specified  
Order Code  
Part number  
Marking  
STPS1L20MF  
F1L2  
Table 1.  
Symbol  
Absolute ratings (limiting values)  
Parameter  
Value  
Unit  
VRRM  
IF(RMS)  
IF(AV)  
IFSM  
PARM  
Tstg  
Repetitive peak reverse voltage  
RMS forward voltage  
20  
V
A
2
1
Average forward current  
Tc = 140° C δ = 0.5  
tp = 10 ms sinusoidal  
tp = 1 µs Tj = 25° C  
A
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
50  
A
1400  
-65 to + 150  
150  
W
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature(1)  
dV/dt  
Critical rate of rise of reverse voltage (rated VR, Tj = 25° C)  
10000  
dPtot  
dTj  
1
---------------  
-------------------------  
1.  
<
condition to avoid thermal runaway for a diode on its own heatsink  
Rev 1  
Rth(j a)  
August 2006  
1/7  
www.st.com  
Characteristics  
STPS1L20MF  
1
Characteristics  
Table 2.  
Symbol  
Rth(j-c)  
Thermal resistance  
Parameter  
Value  
Unit  
Junction to case  
20  
°C/W  
°C/W  
(1)  
Rth(j-a)  
Junction to ambient  
250  
1. Mounted with minimum recommended pad size, PC board FR4  
Table 3.  
Symbol  
Static electrical characteristics  
Parameter  
Tests conditions  
Min.  
Typ  
0.015 0.075  
0.90 4.50  
0.005 0.035  
0.45 2.50  
0.003 0.025  
Max.  
Unit  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
Tj = 25° C  
Tj = 85° C  
VR = VRRM  
VR = 10 V  
VR = 5 V  
IF = 1 A  
(1)  
IR  
Reverse leakage current  
mA  
0.30  
0.38  
0.32  
0.42  
0.37  
0.46  
0.42  
0.50  
0.46  
1.60  
0.43  
0.37  
0.47  
0.42  
0.53  
0.49  
0.60  
0.56  
IF = 2 A  
(1)  
VF  
Forward voltage drop  
V
IF = 3 A  
IF = 4 A  
1. Pulse test: = 380 µs, δ < 2%  
2
To evaluate the conduction losses use the following equation: P = 0.32 x IF(AV) + 0.05 IF (RMS)  
2/7  
STPS1L20MF  
Characteristics  
Figure 1.  
Conduction losses versus average Figure 2.  
current  
Average forward current versus  
ambient temperature (δ = 0.5)  
P
F(AV)  
(W)  
I
(A)  
F(AV)  
0.50  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Rth(j-a)=Rth(j-c)  
δ = 0.2  
δ = 0.5  
δ = 0.1  
δ = 0.05  
δ = 1  
Rth(j-a)=270°C/W  
T
I
(A)  
T
(°C)  
amb  
F(AV)  
tp  
=tp/T  
δ
0
25  
50  
75  
100  
125  
150  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
Figure 3.  
Normalized avalanche power  
derating versus pulse duration  
Figure 4.  
Normalized avalanche power  
derating versus junction  
temperature  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0.01  
T (°C)  
j
t (µs)  
p
0
0.001  
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
Figure 5.  
Reverse leakage current versus  
junction temperature (typical  
values)  
Figure 6.  
Reverse leakage current versus  
reverse voltage applied (typical  
values)  
I
M
(A)  
Z
/R  
th(j-c) th(j-c)  
25  
20  
15  
10  
5
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
δ = 0.5  
TC=25°C  
TC=75°C  
δ = 0.2  
T
TC=125°C  
IM  
δ = 0.1  
Single pulse  
t
t(s)  
t (s)  
p
tp  
1.E-01  
=tp/T  
δ
δ=0.5  
0
1.E-04  
1.E-03  
1.E-02  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
3/7  
Characteristics  
STPS1L20MF  
Figure 7.  
Reverse leakage currrent versus  
Figure 8.  
Reverse leakage currrent versus  
reverse voltage applied (typical  
values)  
junction temperature (typical  
values)  
I (mA)  
R
I (mA)  
R
1.E+02  
1.E+01  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E+02  
1.E+01  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
Tj=150°C  
Tj=125°C  
VR=20V  
Tj=100°C  
Tj=75°C  
Tj=50°C  
Tj=25°C  
V (V)  
R
T (°C)  
j
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
25  
50  
75  
100  
125  
150  
Figure 9.  
Junction capacitance versus  
reverse voltage applied (typical  
values)  
Figure 10. Forward voltage drop versus  
forward current  
C(pF)  
I
(A)  
FM  
1000  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
F=1MHz  
VOSC=30mVRMS  
Tj=25°C  
Tj=85°C  
(maximum values)  
Tj=85°C  
(typical values)  
100  
Tj=25°C  
(maximum values)  
V (V)  
FM  
V (V)  
R
10  
1
10  
100  
0.00  
0.05  
0.10  
0.15  
0.20  
0.25  
0.30  
0.35  
0.40  
0.45  
0.50  
Figure 11. Thermal resistance junction to  
ambient versus copper surface  
under tab (epoxy printed board  
FR4, Cu=35 µm, typical values)  
R
(°C/W)  
th(j-a)  
250  
200  
150  
100  
50  
S(mm²)  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
4/7  
STPS1L20MF  
Package information  
2
Package information  
Table 4.  
STmite flat dimensions  
Dimensions  
Millimeters  
Ref.  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
b
0.80 0.85 0.95 0.031 0.033 0.037  
0.40 0.55 0.65 0.016 0.022 0.026  
L1  
L
L2  
E1  
b2 0.70 0.85 1.00 0.027 0.033 0.039  
D
b
b2  
c
D
E
0.10 0.15 0.25 0.004 0.006 0.009  
1.75 1.90 2.05 0.069 0.075 0.081  
3.60 3.80 3.90 0.142 0.150 0.154  
L3  
E
c
A
E1 2.80 2.95 3.10 0.110 0.116 0.122  
0.50 0.55 0.80 0.020 0.022 0.031  
L
L1 2.10 2.40 2.60 0.083 0.094 0.102  
L2 0.45 0.60 0.75 0.018 0.024 0.030  
L3 0.20 0.35 0.50 0.008 0.014 0.020  
Figure 12. STmite flat recommended footprint (all dimensions in mm)  
0.85 0.63  
2.00  
0.65  
0.65  
0.95  
1.95  
4.13  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com.  
5/7  
Ordering information  
STPS1L20MF  
3
Ordering information  
Part number  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS1L20MF  
F1L2  
STmite flat  
16 mg  
12000  
Tape and reel  
4
Revision history  
Date  
Revision  
Changes  
21-Aug-2006  
1
First issue.  
6/7  
STPS1L20MF  
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7/7  

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