首页 |元器件品牌

TSD2918 [STMICROELECTRONICS]

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs; 射频功率晶体管HF / VHF / UHF N沟道MOSFET
TSD2918
型号： TSD2918
厂家： ST    ST
描述：

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
射频功率晶体管HF / VHF / UHF N沟道MOSFET

晶体 晶体管 射频
文件： 总8页 (文件大小：104K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SD2918  
RF POWER TRANSISTORS  
HF/VHF/UHF N-CHANNEL MOSFETs  
ADVANCE DATA  
■
■
■
■
GOLD METALLIZATION  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
Pout = 30 W MIN. WITH 18 dB GAIN @ 30  
MHz  
DESCRIPTION  
The SD2918 is a gold metallizedN-Channel MOS  
field-effect RF power transistor. It is intended for  
use in 50 V DC large signal applications up to  
200 MHz  
M113  
epoxy sealed  
ORDER CODE  
SD2918  
BRANDING  
TSD2918  
PIN CONNECTION  
1. Drain  
2. Source  
3.Gate  
4. Source  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)  
Symbol  
Parameter  
Value  
Unit  
V
V(BR)DSS Drain Source Voltage  
125  
125  
VDGR  
VGS  
ID  
V
Drain-Gate Voltage (RGS= 1 MΩ)  
Gate-Source Voltage  
±20  
V
Drain Current  
6
A
PDISS  
Tj  
Power Dissipation  
175  
W
oC  
oC  
Max. Operating Junction Temperature  
Storage Temperature  
200  
TSTG  
-65 to 150  
THERMAL DATA  
Rth(j-c)  
Rth(c-s)  
Junction-Case Thermal Resistance  
Case-Heatsink Thermal Resistance  
1.0  
0.30  
oC/W  
oC/W  
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).  
1/8  
November 1999  
SD2918  
ELECTRICAL SPECIFICATION (Tcase = 25 oC)  
STATIC  
Symbol  
Parameter  
IDS = 10 mA  
VDS = 50 V  
VDS = 0 V  
Min.  
Typ.  
Max.  
Unit  
V
V(BR)DSS VGS = 0V  
125  
IDSS  
IGSS  
VGS = 0V  
VGS = 20V  
VDS = 10V  
1.0  
1
mA  
µA  
V
VGS(Q)  
ID = 10 mA  
ID = 2.5 A  
1.0  
0.8  
5.0  
5.0  
VDS(ON) VGS = 10V  
V
gFS  
CISS  
COSS  
CRSS  
VDS = 10V  
VGS = 0V  
VGS = 0V  
VGS = 0V  
ID = 2.5 A  
mho  
pF  
pF  
pF  
VDS = 50 V  
VDS = 50 V  
VDS = 50 V  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
58  
35.5  
7.5  
REF. 1022497C  
DYNAMIC  
Symbol  
POUT  
GPS  
Parameter  
Min.  
30  
Typ.  
Max.  
Unit  
W
f = 30MHz  
f = 30MHz  
f = 30MHz  
f = 30MHz  
VDD = 50V  
VDD = 50V  
VDD = 50V  
VDD = 50V  
Pin = 0.475 W  
IDQ = 100 mA  
IDQ = 100 mA  
IDQ = 100 mA  
IDQ = 100 mA  
Pout = 30 W  
Pout = 30 W  
Pout = 30 W  
18  
22  
55  
dB  
ηD  
50  
%
Load  
30:1  
VSWR  
Mismatch All Angles  
IMPEDANCE DATA  
FREQ.  
ZIN (Ω)  
24.4 - j 13.4  
ZDL (Ω)  
30 MHz  
28.8 + j 7.2  
2/8  
SD2918  
TYPICAL PERFORMANCE  
Capacitancevs Drain-Source Voltage  
Maximum Thermal Resistance vs Case  
Temperature  
Drain Current vs Gate Voltage  
Gate-SourceVoltages vs Case Temperature  
3/8  
SD2918  
TYPICAL PERFORMANCE  
Output Power vs Input Power  
Output Power vs Input Power  
Output Power vs Voltage Supply  
Output Power vs Gate Voltage  
Power Gain & Efficiency vs Output Power  
4/8  
SD2918  
30 MHz Test Circuit Schematic  
VB  
+50V  
+
+
RF  
INPUT  
RF  
OUTPUT  
REF. 7143542A  
30 MHz Test Circuit ComponentPart List  
5/8  
SD2918  
30 MHz Test Circuit Photomaster  
REF. 7143542A  
30 MHz Production Test Fixture  
6/8  
SD2918  
M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
5.59  
TYP.  
MAX.  
5.84  
20.83  
18.54  
24.89  
9.78  
0.15  
2.67  
4.57  
7.14  
6.48  
3.30  
MIN.  
0.220  
0.780  
0.720  
0.970  
0.370  
0.004  
0.085  
0.160  
MAX.  
0.230  
0.820  
0.730  
0.980  
0.385  
0.006  
0.105  
0.180  
0.281  
0.255  
0.130  
A
B
C
D
E
F
G
H
I
19.81  
18.29  
24.64  
9.40  
0.10  
2.16  
4.06  
J
6.22  
3.05  
0.245  
0.120  
K
Controlling Dimension: Inches  
1010936D  
7/8  
SD2918  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
1999 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy- Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland -United Kingdom - U.S.A.  
http://www.st.com  
.
8/8  

相关型号：

TSD2921

 TRANSISTOR | MOSFET | N-CHANNEL | 125V V(BR)DSS | SOT-121
ETC

TSD2922

 TRANSISTOR | MOSFET | N-CHANNEL | 125V V(BR)DSS | SOT-262A1
ETC

TSD2931

 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
STMICROELECTR

TSD2931-10

 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
STMICROELECTR

TSD2932

 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
STMICROELECTR

TSD2M350F

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 30A I(D)
ETC

TSD2M350V

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 30A I(D)
ETC

TSD2M450F

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 26A I(D)
ETC

TSD2M450V

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 26A I(D)
ETC

TSD2N60M

 600V N-Channel MOSFET
TRUMPOWER

TSD3

 EURO TERMINAL BLOCKS
ETC

TSD30H100CW

 Trench Schottky Rectifier
TSC
©2020 ICPDF网 联系我们和版权申明