VNP10N06 [STMICROELECTRONICS]
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET; ？ OMNIFET ?:岗AUTOPROTECTED功率MOSFET
| 型号： | VNP10N06 |
| 厂家： | 
ST |
| 描述： | ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总11页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNP10N06
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
Vclamp
RDS(on)
Ilim
VNP10N06
60 V
0.3 Ω
10 A
■
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
LOGIC LEVEL INPUT THRESHOLD
ESD PROTECTION
SCHMITT TRIGGER ON INPUT
HIGH NOISE IMMUNITY
3
2
1
TO-220
STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP10N06 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
BLOCK DIAGRAM
1/11
June 1997
VNP10N06
ABSOLUTE MAXIMUM RATING
Symbol
VDS
Vin
Parameter
Value
Internally Clamped
Internally Clamped
± 20
Unit
V
Drain-source Voltage (Vin = 0)
Input Voltage
V
Iin
Input Current
mA
A
ID
Drain Current
Internally Limited
-15
IR
Reverse DC Output Current
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)
Total Dissipation at Tc = 25 oC
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
A
Vesd
Ptot
Tj
4000
V
42
W
oC
oC
oC
Internally Limited
Internally Limited
-55 to 150
Tc
Tst g
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
ID = 200 mA Vin = 0
Min.
Typ.
Max.
Unit
VCLAMP
Drain-source Clamp
Voltage
50
60
70
V
VIL
VIH
Input Low Level
Voltage
1.5
V
V
ID = 100 µA VDS = 16 V
Input High Level
Voltage
3.2
RL = 27 Ω VDD = 16 V
VDS = 0.5 V
VINCL
IDSS
IISS
Input-Source Reverse
Clamp Voltage
Iin = -1 mA
Iin = 1 mA
-1
8
-0.3
11
V
V
Zero Input Voltage
Drain Current (Vin = 0) VDS < 35 V Vin = VIL
VDS = 50 V Vin = VIL
250
100
µA
µA
Supply Current from
Input Pin
VDS = 0 V Vin = 5 V
150
300
µA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
RDS(on)
Static Drain-source On Vin = 7 V
Resistance
ID = 1 A TJ < 125 oC
0.15
0.3
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
Coss
Output Capacitance
VDS = 13 V f = 1 MHz Vin = 0
350
500
pF
2/11
VNP10N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Vgen = 7 V
(see figure 3)
Id = 1 A
Rgen = 10 Ω
1100
550
200
100
1600
900
400
200
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 16 V
Vgen = 7 V
(see figure 3)
Id = 1 A
Rgen = 1000 Ω
1.2
1
1.6
1.2
1.8
1.5
2.3
1.8
µs
µs
µs
µs
(di/dt)on Turn-on Current Slope VDD = 16 V
Vin = 7 V
ID = 1 A
Rgen = 10 Ω
1.5
A/µs
Qi
Total Input Charge
VDD = 12 V ID = 1 A Vin = 7 V
13
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
0.8
Max.
Unit
V
VSD ( ) Forward On Voltage
ISD = 1 A Vin = VIL
1.6
trr
(
)
Reverse Recovery
Time
125
ns
ISD = 1 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 25 oC
Qrr
(
)
Reverse Recovery
Charge
Reverse Recovery
Current
0.22
3.5
µC
(see test circuit, figure 5)
IRRM
(
)
A
PROTECTION
Symbol
Parameter
Test Conditions
Vin = 7 V VDS = 13 V
Min.
Typ.
10
Max.
15
Unit
A
Ilim
Drain Current Limit
6
tdlim
(
)
)
Step Response
Current Limit
Vin = 7 V VDS step from 0 to 13 V
12
20
µs
Tjsh
(
Overtemperature
Shutdown
150
oC
Tjrs
Eas
(
)
Overtemperature Reset
135
250
oC
(
)
Single Pulse
Avalanche Energy
starting Tj = 25 oC
Vin = 7 V Rgen = 1 KΩ L = 10 mH
VDD = 24 V
mJ
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
) Parameters guaranteed by design/characterization
(
3/11
VNP10N06
PROTECTION FEATURES
to a voltage high enough to sustain the inductive
load current even if the INPUT pin is driven to 0V.
The device integrates an active current limiter
circuit which limits the drain current ID to Ilim
whatever the INPUT pin Voltage.
During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as VIN > VIH.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150 µA) flows into the INPUT pin in order to
supply the internal circuitry.
When the current limiter is active, the device
operates in the linear region, so power dissipation
may exceed the heatsinkingcapability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperature threshold Tjsh
.
If Tj reaches Tjsh, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when Tj has cooled down to
Tjrs
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal Power MOSFET.
In this condition, the Power MOSFET gate is set
4/11
VNP10N06
Thermal Impedance
Derating Curve
Output Characteristics
Static Drain-Source On Resistance vs Input
Voltage
Static Drain-Source On Resistance
Static Drain-Source On Resistance
5/11
VNP10N06
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
6/11
VNP10N06
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
Switching Time Resistive Load
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
7/11
VNP10N06
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Voltage vs Junction
Temperature
8/11
VNP10N06
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Input Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 6: Waveforms
And Diode Recovery Times
9/11
VNP10N06
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
10/11
VNP10N06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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11/11
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