MA4AGBLP912_V3 [TE]
AlGaAs Beamlead PIN Diode; 铝镓砷Beamlead PIN二极管
| 型号： | MA4AGBLP912_V3 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs Beamlead PIN Diode |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4AGBLP912
AlGaAs Beamlead PIN Diode
V3
Features
MA4AGBLP912
♦ Low Series Resistance
♦ Low Capacitance
♦ Millimeter Wave Switching
♦ Millimeter Wave Cutoff Frequency
♦ 5 Nanosecond Switching Speed
♦ Can be Driven by a Buffered +5V TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant
Topside
Description
M/A-COM Technology Solutions MA4AGBLP912 is
an Aluminum-Gallium-Arsenide anode enhanced,
beam lead PIN diode. AlGaAs anodes, which utilize
M/A-COM Tech’s patent pending hetero-junction
technology, produce less diode “On” resistance than
Bottom
a
conventional GaAs device. This device is
fabricated on a OMCVD epitaxial wafer using a
process optimized for high device uniformity and
extremely low parasitics. The diode exhibits low
series resistance, 4Ω, low capacitance, 28fF, and an
extremely fast switching speed of 5nS. It is fully
passivated with silicon nitride and has an additional
polymer layer for scratch protection. The protective
coating prevents damage to the junction and the
anode air bridges during handling and assembly.
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter
Absolute Maximum
-50V
Reverse Voltage
Applications
Operating Temperature
Storage Temperature
Junction Temperature
Forward DC Current
C.W. Incident Power
Mounting Temperature
-65°C to +125°C
-65°C to +150°C
+175°C
The ultra low capacitance of the MA4AGBLP912
device makes it ideally suited for use through
W-band. The low RC product and low profile of the
beamlead PIN diode allows for use in microwave
and millimeter wave switch designs, where low
insertion loss and high isolation are required. The
operating bias conditions of +10mA for the low loss
state, and 0V, for the isolation state permits the use
of a simple +5V TTL gate driver. AlGaAs, beamlead
diodes, can be used in switching arrays on radar
systems, high speed ECM circuits, optical
switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
40mA
+23dBm
+235°C for 10 seconds
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
V3
Electrical Specifications at TAMB = 25°C
Test Conditions
Paramters
Units
Min
Typical
Max.
Total Capacitance @ –5V/1 MHz
Ct
fF
–
26
30
Forward Resistance @ +20mA/1 GHz
Forward Voltage at +10mA
Leakage Current at –40 V
Rs
Vf
Ir
Ohms
Volts
nA
–
1.2
–
4
1.36
50
5
4.9
1.5
300
10
Minority Carrier Lifetime
TL
nS
–
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
0.009
0.013
0.2286
0.3302
B
C
D
0.0049
0.0037
0.0049
0.0089
0.0057
0.0089
0.1245
0.0940
0.1245
0.2261
0.1448
0.2261
E
F
0.002
0.006
0.0508
0.5537
0.1524
0.0218
0.0278
0.70612
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
V3
Diode Model
Rs
Ls = 0.5
Ct
MA4AGBLP912 SPICE Model
Is=1.0E-14 A
Vi=0.0 V
wBv= 50 V
wPmax= 100 mW
Ffe= 1.0
μ = 8600 cm^2/V-sec
Wi= 3.0 um
e-
Rr= 10 K Ohms
Cjmin= 0.020 pF
Tau= 10 nsec
Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I)
Cj0= 0.022 pF
Vj= 1.35 V
M= 0.5
Fc= 0.5
Imax= 0.04 A
Kf= 0.0
Af=1.0
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4AGBLP912
AlGaAs Beamlead PIN Diode
V3
Handling and Assembly Procedures
The following precautions should be observed to avoid damaging these devices.
Cleanliness
These devices should be handled in a clean environment.
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are Class 1 ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these devices.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the
anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads
may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A
vacuum pencil with a #27 tip is recommended for picking and placing.
Attachment
These devices were designed to be inserted onto hard or soft substrates. Recommended methods
of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive
silver epoxy.
Ordering Information
Part Number
Packaging
MA4AGBLP912
Gel Pak
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
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