MA4AGSW5_V5 [TE]
SP5T AlGaAs PIN Diode Switch; SP5T铝镓砷PIN二极管开关
| 型号： | MA4AGSW5_V5 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SP5T AlGaAs PIN Diode Switch |
| 文件： | 总7页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
1.7dB Insertion Loss at 50 GHZ
35 dB Isolation at 50 GHz
Low Current consumption.
-10mA for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology.
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
Yellow areas indicate bond pads
DESCRIPTION
The MA4AGSW5 is an Aluminum-Gallium-Arsenide,
single pole, five throw (SP4T), PIN diode switch. The
switch features enhanced AlGaAs anodes which are
formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Bias Current
± 25mA
Assembly Temperature
Junction Temperature
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
Electrical Specifications @ TA = 25°C, +/-10mA bias current
(On-wafer measurements)
FREQUENCY
BAND
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
FREQUENCY BAND
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
FREQUENCY BAND
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
RF PARAMETER
MAX
UNITS
PORT
J2 to J1
J3 to J1
J4 to J1
J5 to J1
BIAS
1.4
1.9
1.4
1.9
1.4
1.9
1.4
1.9
1.4
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
-10 mA @ J2, +10 mA @ J3, J4, J5, J6
-10 mA @ J3, +10 mA @ J2, J4, J5, J6
-10 mA @ J4, +10 mA @ J2, J3, J5, J6
-10 mA @ J5, +10 mA @ J2, J3, J4, J6
INSERTION LOSS
RF PARAMETER
ISOLATION*
J6 to J1
PORT
-10 mA @ J6, +10 mA @ J2, J3, J4, J5
BIAS
1.9
MIN
35.0
30.0
35.0
30.0
35.0
30.0
35.0
30.0
35.0
30.0
MIN
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
J2 to J1
-10 mA @ J6, +10 mA @ J3, J4, J5, J2
J3 to J1
J4 to J1
J5 to J1
-10 mA @ J6, +10 mA @ J2, J4, J5, J2
-10 mA @ J6, +10 mA @ J2, J3, J5, J2
-10 mA @ J6, +10 mA @ J2, J3, J4, J2
J6 to J1
PORT
-10 mA @ J2, +10 mA @ J2, J3, J4, J6
BIAS
RF PARAMETER
J2 to J1
-10 mA @ J2, +10 mA @ J3, J4, J5, J6
J3 to J1
J4 to J1
J5 to J1
J6 to J1
-10 mA @ J3, +10 mA @ J2, J4, J5, J6
-10 mA @ J4, +10 mA @ J2, J3, J5, J6
-10 mA @ J5, +10 mA @ J2, J3, J4, J6
-10 mA @ J6, +10 mA @ J2, J3, J4, J5
INPUT/OUTPUT
RETURN LOSS
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction
diode port in low loss = 22 dB Typical.
Typical
Value
Parameter
F ( GHz )
RF Ports
Test Conditions
Units
Switching Speed*
( 10-90 % RF Voltage )
10.0
J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver
15
nS
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to
achieve 15 ns rise and fall times.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
Typical R.F. Performance (Probed on Wafer) @ +25°C
Isolation
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
Typical RF Performance (Probed on wafer) @ +25°C
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
Operation of the MA4AGSW5 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching ports is required for the operation of the MA4AGSW5, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2, J3, J4,J5 & J6 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The
bias network design shown below should yield > 30 dB RF to DC Isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW5 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT) CONDITION OF RF OUTPUT
J2 J3 J4 J5 J6
J2-J1
J3-J1
J4-J1
J5-J1
J6-J1
-10mA +10mA +10mA +10mA
+10mA -10mA +10mA +10mA
+10mA +10mA -10mA +10mA
+10mA +10mA +10mA -10mA
+10mA +10mA +10mA +10mA
+10mA Low Loss Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
+10mA
+10mA
+10mA
-10mA
Isolation Low Loss Isolation
Isolation
Isolation
Isolation
Isolation Low Loss Isolation
Isolation
Isolation
Isolation Low Loss Isolation
Isolation Isolation Low Loss
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
Chip Dimensions and Bonding Pad Locations (In Yellow)
H
Dimensions
mils
mm
Location
min
60.0
63.2
29.7
15.2
32.2
6.5
25.7
3.7
3.9
max
61.2
64.4
30.9
16.0
33.0
7.2
26.5
4.3
4.3
min
max
1.524
1.605
0.754
0.386
0.818
0.165
0.653
0.094
0.099
1.555
1.636
0.785
0.406
0.838
0.183
0.673
0.109
0.109
A
B
C
D
E
F
G
H
Pads
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW5
SP5T AlGaAs PIN Diode Switch
Rev. V5
ASSEMBLY INSTRUCTIONS
CLEANLINESS
The chip should be handled in a clean environment.
STATIC SENSITIVITY
This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickup tools, or alternatively with plastic tweezers.
ASSEMBLY TECHNIQUES
The MA4AGSW5, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a
low temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not
expose die to temperatures greater than 300°C for more than 10 seconds.
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the
lowest inductance and best microwave performance. For more detailed handling and assembly instructions,
see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at
www.macomtech.com.
Ordering Information
Part Number
Packaging
MA4AGSW5
Waffle Pack
Gel Pack
MASW-000555-13570G
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
相关型号：
©2020 ICPDF网 联系我们和版权申明