MAAPGM0021-DIE [TE]
2W C/X-Band Power Amplifier 4.5-9.0 GHz; 2W C / X波段功率放大器4.5-9.0 GHz的
| 型号： | MAAPGM0021-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 2W C/X-Band Power Amplifier 4.5-9.0 GHz |
| 文件： | 总6页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RO-P-DS-3012 - A
2W C/X-Band Power Amplifier
4.5–9.0 GHz
Preliminary Information
Features
4.5-9.0 GHz GaAs MMIC Amplifier
♦ 4.5 to 9.0 GHz Operation
♦ 2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® MESFET Process
Primary Applications
♦ Multiple Band Point-to-Point Radio
♦ SatCom
♦ ISM Band
Description
The MAAPGM0021-Die is a 2-stage 2 W power amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
This process provides polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
4.5-9.0
33
GHz
dBm
f
Output Power
POUT
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
PAE
P1dB
G
30
31
%
dBm
dB
17
VSWR
IGG
IDD
1.7:1
< 2
< 750
41
Gate Current
mA
mA
Drain Current
Output Third Order Intercept
Noise Figure
OTOI
NF
dBm
dB
9
3rd Order Intermodulation Distortion
Single Carrier Level = 23 dBm
IM3
31
dBc
5th Order Intermodulation Distortion
IM5
41
dBc
Single Carrier Level = 23 dBm
1. TB = MMIC Base Temperature
RO-P-DS-3012 - A
2/6
2W C/X-Band Power Amplifier
Maximum Operating Conditions 1
MAAPGM0021-DIE
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
23.0
+12.0
-3.0
Drain Supply Voltage
VDD
Gate Supply Voltage
V
VGG
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
950
mA
W
IDQ
6.3
PDISS
Junction Temperature
Storage Temperature
180
°C
°C
Tj
TSTG
-55 to +150
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
PIN
TJ
4.0
8.0
-2.0
18.0
10.0
-1.5
21.0
150
V
V
-2.3
Input Power
dBm
°C
Junction Temperature
Thermal Resistance
12.7°
150
°C/W
°C
ΘJC
MMIC Base Temperature
TB
Note 2
2. Maximum MMIC Base Temperature = 150°C - ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
3/6
2W C/X-Band Power Amplifier
MAAPGM0021-DIE
50
50
POUT
PAE
40
40
30
20
10
0
30
20
10
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 18 dBm.
50
50
40
30
20
10
0
POUT
PAE
40
30
20
10
0
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 7.5 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
4/6
2W C/X-Band Power Amplifier
MAAPGM0021-DIE
50
VDD = 4
VDD = 6
VDD = 8
VDD = 10
40
30
20
10
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
6
GAIN
VSWR
25
20
15
10
5
5
4
3
2
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Frequency (GHz)
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
5/6
2W C/X-Band Power Amplifier
MAAPGM0021-DIE
Mechanical Information
Chip Size: 2.98 x 2.98 x 0.075 mm (117 x 117 x 3 mils)
2.980 mm.
2.828 mm.
2.828 mm.
1.494 mm.
1.490 mm.
0.149mm.
0.152 mm.
0
0.152 mm.
0
Figure 5. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
Size (µm)
100 x 200
200 x 150
150 x 150
RF In and Out
4 x 8
8 x 6
6 x 6
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3012 - A
6/6
2W C/X-Band Power Amplifier
MAAPGM0021-DIE
100 pF
100 pF
RFIN
RFOUT
100 pF
100 pF
VGG
VDD
0.1 µF
0.1 µF
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
相关型号：
©2020 ICPDF网 联系我们和版权申明