MAAPGM0078-DIE [TE]
Amplifier, Power, 12W 2.0-6.0 GHz; 放大器，电源， 12W 2.0-6.0 GHz的
| 型号： | MAAPGM0078-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Amplifier, Power, 12W 2.0-6.0 GHz |
| 文件： | 总7页 (文件大小：894K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Features
♦ 12 Watt Saturated Output Power Level
♦ Variable Drain Voltage (8-10V) Operation
♦ MSAG™ Process
Description
The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is
100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors, multiple implant capa-
bility enabling power, low-noise, switch and digital FETs on a single chip, and
polyimide scratch protection for ease of use with automated manufacturing
processes. The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when employed in her-
metic packaging.
Primary Applications
♦ Radio Communications
♦ SatCom
♦ Radar
♦ EW
Also Available in:
Description
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
MAAP-000078-SMB001
Mechanical Sample (Die)
Part Number
MAAP-000078-PKG001
MAAP-000078-SMB004
MAAP-000078-MCH000
Electrical Characteristics: TB = 55°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.8A2, Pin = 24 dBm, RG=30 Ω
Parameter
Symbol
Typical
2.0-6.0
41
Units
GHz
dBm
dBm
dB
Bandwidth
f
Output Power
POUT
P1dB
G
1-dB Compression Point
Small Signal Gain
40
20
Power Added Efficiency
Input VSWR
28
%
PAE
VSWR
1.4:1
2.3:1
Output VSWR
VSWR
IGG
Gate Current
30
mA
Drain Current, under RF Drive
2nd Harmonic (4 GHz)
4.1
30
67
A
IDD
2f
dBc
dBc
2
nd Harmonic (6 GHz)
2f
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.6 and –1.5V to achieve specified Idq.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Maximum Ratings3
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
29
Drain Supply Voltage
Gate Supply Voltage
+12.0
-3.0
VDD
V
VGG
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
4.5
45.1
A
IDQ
PDISS
TJ
W
°C
°C
170
Storage Temperature
TSTG
-55 to +150
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
8.0
10.0
-2.2
10.0
-1.5
V
V
-2.6
Input Power
PIN
ΘJC
TB
24.0
2.9
26
dBm
°C/W
°C
Thermal Resistance
MMIC Base Temperature
Note 5
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
50
45
40
35
30
25
20
15
10
5
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.2 V).
4. Set RF input.
0
0
20
40
60
80
100
120
140
160
180
MMIC Base Temperature (ºC)
5. Power down sequence in reverse. Turn VGG off last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
50
47
44
41
38
35
32
29
26
23
20
50
45
40
35
30
25
20
15
10
5
50
47
44
41
38
35
32
29
26
23
20
6V
8V
10V
Pout
PAE
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Frequency (GHz)
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
Figure 1. Output Power and Power Added Efficiency
at VD = 10V, Pin = 24dBm, and 25% IDSS
50
50
47
44
41
38
35
32
29
26
23
20
47
44
41
38
35
32
29
26
23
20
10ºC
55ºC
110ºC
6V
8V
10V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
Frequency (GHz)
Frequency (GHz)
Figure 4. Saturated Output Power vs. Frequency and Temperature at
10V and 25% IDSS
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at
25% IDSS
50
46
42
38
34
30
26
22
18
14
10
5.3
30
28
26
24
22
20
18
16
14
12
10
8
6
5
4
3
2
1
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
4.4
4.3
Gain
Input VSWR
Output VSWR
Pout
SSG
PAE
IDS
6
4
2
0
30
40
50
60
70
80
90
100
110
120
130
140
150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Junction Temperature (ºC)
Frequency (GHz)
Figure 5. Small Signal Gain and Input and Output VSWR
at 25% IDSS, VD = 10V
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 4 GHz, and 25% IDSS
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
25
23
21
19
17
15
13
11
9
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2 GHz
4 GHz
6 GHz
7
5
4
6
8
10
12
14
16
18
20
22
24
26
28
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Input Power (dBm)
Output Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS
Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS
50
45
40
35
30
25
20
15
10
5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0
4
6
8
10
12
14
16
18
20
22
24
26
28
4
6
8
10
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
25% IDSS
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS
45
25
23
21
19
17
15
13
11
9
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2 GHz
4 GHz
6 GHz
7
5
4
6
8
10
12
14
Input Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS
16
18
20
22
24
26
28
20
22
24
26
28
30
32
Output Power (dBm)
Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS
34
36
38
40
42
44
46
48
50
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
All Data is at 55ºC MMIC base temperature, CW stimulus, unless otherwise noted.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
45
40
35
30
25
20
15
10
5
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0
4
6
8
10
12
14
16
18
20
22
24
26
28
4
6
8
10
12
14
Input Power (dBm)
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS
16
18
20
22
24
26
28
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
25% IDSS
100
90
80
70
60
50
40
30
20
10
0
4 dBm
8 dBm
12 dBm
16 dBm
20 dBm
24 dBm
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Figure 15. Second Harmonic vs. Frequency and Input Power at 10V and 25%
IDSS
Figure 16. Fixture used to characterize MAAPGM0078-DIE
under CW stimulus.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
Mechanical Information
Chip Size: 5.000 x 6.346 x 0.075 mm (197 x 250 x 3 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 17. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
Size (μm)
RF In and Out
100 x 200
200 x 150
4 x 8
8 x 6
DC Drain Supply Voltage VD1
DC Drain Supply Voltage VD2
DC Gate Supply Voltage VG1
DC Gate Supply Voltage VG2
500 x 200
150 x 150
150 x 125
20 x 8
6 x 6
6 x 5
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 12W
2.0-6.0 GHz
MAAPGM0078-DIE
Rev B
Preliminary Datasheet
VDD
Assembly and Bonding Diagram
0.01-
0.1
F
VDD
VGG
Gnd
RF
Thermal Management is critical on this
part. Refer to Application Note AN3019
for applicable guidelines.
100-
200
pF
100-
200
pF
100-
200
pF
100-
200
pF
NOTE 1: All Application Notes may be ac-
cessed by going to http://www.macom.com/
Application%20Notes/index.htm.
Gate
Crossover
Drain
Crossover
RFOUT
RFIN
NOTE 2: In implementing the DC/ RF cross-
over shown, the following rules must applied.
1. the DC crossovers should approach and
cross the RF trace at a 90 degree angle;
2. the printed DC traces that approach the
RF line should be stopped 2 substrate
heights from the RF line edge;
3. the rated current capability of the DC
crossovers should be greater than the
maximum current of the device; and
4. the wires or ribbons used to make the
DC crossovers should clear the RF trace
by ~ 1 substrate height.
100-
200
pF
100-
200
pF
100-
200
pF
100-
200
pF
30
VGG
0.01-
0.1
F
GND
Figure 18. Recommended operational configuration. Wire bond as shown.
Die Handling:
Refer to Application Note AN3016.
Assembly Instructions:
Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than
7 minutes. Refer to Application Note AN3017 for more detailed information.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge
bond techniques. For DC pad connections, use either ball or wedge bonds. For best
RF performance, use wedge bonds of shortest length, although ball bonds are also
acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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