MASW-002100-1192 [TE]
HMIC Silicon PIN Diode Switches;
| 型号： | MASW-002100-1192 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMIC Silicon PIN Diode Switches |
| 文件： | 总8页 (文件大小：946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Features
Functional Diagrams
Broad Bandwidth
Specified from 50 MHz to 20 GHz
Usable from 50 MHz to 26.5 GHz
Lower Insertion Loss / Higher Isolation
Fully Monolithic, Glass Encapsulated Chip
Up to +33 dBm CW Power Handling @ +25°C
RoHS* Compliant
J1
J2
MASW-001100-1190 (SPST)
Description
The MASW-001100-1190 (SPST), MASW-002100-
1192 (SPDT) and MASW-003100-1192 (SP3T) are
series-shunt, broadband, PIN diode switches made
with MACOM’s HMICTM (Heterolithic Microwave
Integrated Circuit) process. This process allows the
silicon pedestals which form the series - shunt
diodes and vias to be embedded into low loss, low
dispersion glass. By also incorporating small
spacing between circuit elements, the result is an
HMIC chip with low insertion loss and high isolation
at frequencies up to 26.5 GHz.
J3
J2
J1
They are designed for use as moderate power, high
performance switches and provide superior
performance when compared to similar designs that
use discrete components.
MASW-002100-1192 (SPDT)
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20,
gold/tin solder or conductive silver epoxy.
J3
J2
J4
Ordering Information
Package
xx = 0G
Package
xx = 0W
Part Number
J1
MASW-001100-1190(xx)
MASW-002100-1192(xx)
MASW-003100-1192(xx)
Gel Pack
Gel Pack
Gel Pack
Waffle Pack
Waffle Pack
Waffle Pack
MASW-003100-1192 (SP3T)
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Electrical Specifications: TA = 25°C, 20 mA
MASW-001100-1190 (SPST)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
0.4
0.5
0.7
55
47
42
31
33
27
0.7
0.9
1.2
Insertion Loss
dB
—
46
39
34
22
15
14
Isolation
dB
dB
—
—
Input Return Loss
13 GHz
20 GHz
Switching Speed1
Voltage Rating2
—
—
ns
V
—
—
—
50
—
—
50
—
Signal Compression
500 mW, 1 GHz
dB
0.2
MASW-002100-1192 (SPDT)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
0.4
0.5
0.7
63
50
42
27
25
25
0.7
1.0
1.2
Insertion Loss
Isolation
dB
—
48
40
34
20
18
15
dB
dB
—
—
Input Return Loss
13 GHz
20 GHz
Switching Speed1
Voltage Rating2
—
—
ns
V
—
—
—
50
—
—
50
—
Signal Compression
500 mW, 1 GHz
dB
0.2
MASW-003100-1192 (SP3T)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
0.5
0.7
0.9
57
48
42
24
22
21
0.8
1.1
1.5
Insertion Loss
Isolation
dB
—
49
42
33
20
14
11
dB
dB
—
—
Input Return Loss
13 GHz
20 GHz
Switching Speed1
Voltage Rating2
—
—
ns
V
—
—
—
50
—
—
50
—
Signal Compression
500 mW, 1 GHz
dB
0.2
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
2
2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10 µA maximum at -50 volts.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Absolute Maximum Ratings3,4,5
Parameter
Absolute Maximum
+33 dBm
Handling Procedures
Please observe the following precautions to avoid
damage:
RF CW Incident Power
Reverse Voltage
-50 V
Bias Current per Port
Operating Temperature
Storage Temperature
Junction Temperature
±50 mA @ +25°C
-65°C to +125°C
-65°C to +150°C
+175°C
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Typical Performance Curves @ 10 GHz:
Insertion Loss vs. Bias Current
Isolation vs. Bias Current
-0.3
-46
MA4SW110
MA4SW210
MA4SW310
-0.4
-0.5
-48
-50
-52
-54
MA4SW110
MA4SW210
MA4SW310
-0.6
-0.7
0
10
20
30
40
50
0
10
20
30
40
50
Current (mA)
Current (mA)
Output Return Loss vs. Bias Current
Input Return Loss vs. Bias Current
-15
-15
MA4SW110
MA4SW210
MA4SW310
MA4SW110
MA4SW210
MA4SW310
-20
-25
-30
-35
-20
-25
-30
-35
0
10
20
30
40
50
0
10
20
30
40
50
Current (mA)
Current (mA)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Typical Performance Curves @ TA = +25°C, 20 mA Bias Current
MASW-001100-1190
Return Loss vs. Frequency
Insertion Loss vs. Frequency
-10
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Input Return Loss
-15
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
MASW-002100-1192
Return Loss vs. Frequency
Insertion Loss vs. Frequency
-10
-0.2
Input Return Loss
-15
-0.4
-0.6
-0.8
-1.0
-1.2
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
MASW-003100-1192
Insertion Loss vs. Frequency
Return Loss vs. Frequency
-10
-0.2
Input Return Loss
Output Return Loss
-15
-0.4
-0.6
-0.8
-1.0
-1.2
-20
-25
-30
-35
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Typical Performance Curves @ TA = +25°C, 20 mA Bias Current
MASW-001100-1190
Isolation vs. Frequency
-30
-40
-50
-60
-70
-80
0
5
10
15
20
25
30
Frequency (GHz)
MASW-002100-1192
Isolation vs. Frequency
-30
-40
-50
-60
-70
-80
0
5
10
15
20
25
30
Frequency (GHz)
MASW-003100-1192
Isolation vs. Frequency
-30
-40
-50
-60
-70
-80
0
5
10
15
20
25
30
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Bias Connections6
Operation of MASW-00x100 Series
The simultaneous application of a negative DC
current to the low loss port and positive DC current
to the isolated port is required for proper operation of
the MA4SW series of PIN switches. The backside
area of the die is the RF and DC ground return and
the DC return is through the common Port J1. A
constant current source should be used to supply
the DC control currents. The control voltages at
these points will not exceed ±1.5 volts for supply
currents up to +20 mA. In the low loss state, the
series diode must be forward biased and the shunt
diode reverse biased. On all isolated ports, the shunt
diode is forward biased and the series diode is
reverse biased.
J1 RFIN
20 pF
20 nH
J2 Bias
100 Ω
20 nH
20 pF
20 pF
J2
RFOUT
20 pF
Switch
Chip
MASW-001100-1190 (SPST)
J1 RFIN
20 pF
Driver Connections and Drivers
MASW-001100-1190 (SPST)
20 nH
J3 Bias
J2 Bias
DC Control Current (mA)
RF Output State
100 Ω
20 nH
20 pF
J2
J1-J2
20 nH
20 pF
20 pF
J2
20 pF
-20
low loss
J3
RFOUT
RFOUT
20 pF
Switch
Chip
+20
Isolation
Compatible MACOM Driver MADR-007097-000100
MASW-002100-1192 (SPDT)
MASW-002100-1192 (SPDT)
J1 RFIN
20 pF
DC Control Current (mA)
RF Output States
J2
J3
J1-J2
J1-J3
-20
+20
low loss
Isolation
20 nH
J4 Bias
J2 Bias
100 Ω
20 nH
+20
-20
Isolation
low loss
20 pF
20 nH
20 pF
20 pF
20 pF
Compatible MACOM Driver MADR-007097-000100
J4
RFOUT
J2
RFOUT
20 pF
MASW-003100-1192 (SP3T)
Switch
Chip
DC Control Current (mA)
RF Output States
J3
Bias
20 nH
20 pF
20 pF
J2
J3
J4
J1-J2
J1-J3
J1-J4
-20
+20
+20
+20
-20
+20
+20
+20
-20
low loss Isolation Isolation
Isolation low loss Isolation
Isolation Isolation low loss
J3 RFOUT
MASW-003100-1192 (SP3T)
Compatible MACOM Driver MADR-009190-000100
6. RLC values are for an operation frequency of 2-18 GHz and
bias current of ± 20 mA per port..
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Chip Outline Drawings7,8
MASW-001100-1190
INCHES
MM
DIM
MIN.
0.014
0.025
MAX.
0.018
0.029
MIN.
0.35
0.64
MAX.
0.45
0.74
A
B
C
D
E
F
0.008 Ref.
0.20 Ref.
0.10 0.15
0.004
0.006
0.004 Ref.
0.10 Ref.
0.08 Ref.
0.08 Ref.
0.52 Ref.
0.003 Ref.
0.003 Ref.
0.020 Ref.
G
H
MASW-002100-1192
INCHES
MM
DIM
MIN.
0.029
0.004
MAX.
0.033
0.006
MIN.
0.73
0.10
MAX.
0.83
0.15
A
B
C
D
E
F
0.004 Ref.
0.10 Ref.
0.005 Ref.
0.009 Ref.
0.023 Ref.
0.007 Ref.
0.004 Ref.
0.13 Ref.
0.23 Ref.
0.58 Ref.
0.17 Ref.
0.10 Ref.
G
H
MASW-003100-1192
INCHES
MM
DIM
MIN.
0.046
0.036
MAX.
0.050
0.040
MIN.
1.16
0.92
MAX.
1.26
1.02
A
B
C
D
E
F
0.019 Ref.
0.48 Ref.
0.014 Ref.
0.004 Ref.
0.005 Ref.
0.36 Ref.
0.10 Ref.
0.13 Ref.
G
H
J
0.004
0.006
0.10
0.15
0.005 Ref.
0.004 Ref.
0.12 Ref.
0.10 Ref.
7. Topside and backside metallization is gold, 2.5 µm thick typical.
8. Yellow areas indicate ribbon/wire bonding pads
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x100 Series
HMIC™ Silicon PIN Diode Switches
Rev. V7
Chip Mounting
Cleanliness
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
The chips should be handled in a clean environment
free of dust and organic contamination.
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
Eutectic Die Attachment
80/20, gold-tin, solder is recommended. A re-flow
oven or hot gas die bonder with a temperature
setting of 290°C is normally used to melt the solder.
The chip should not be exposed to temperatures
greater than 320°C for more than 20 seconds.
Typically no more than three seconds at peak
temperature is required for attachment. RoHS
compliant solders may also be used but solders rich
in tin should be avoided as they will scavenge the
backside gold and/or cause gold embrittlement.
recommended.
A
work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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