MASW-002102-1358 [TE]
HMIC Silicon PIN Diode Switches with Integrated Bias Network;
| 型号： | MASW-002102-1358 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMIC Silicon PIN Diode Switches with Integrated Bias Network |
| 文件： | 总7页 (文件大小：713K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Functional Diagrams1
Features
Broad Bandwidth Specified 2 - 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Lower Insertion Loss / Higher Isolation
Fully Monolithic, Glass Encapsulated Chip
Up to +33 dBm CW Power Handling @ +25°C
RoHS* Compliant
MASW-002102 (SP2T)
Description
The MASW-002100 (SP2T) and MASW-3102
(SP3T) broadband switches with an integrated bias
networks utilizing MACOM’s HMICTM (Heterolithic
Microwave Integrated Circuit) process, US Patent
5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
circuit elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies.
MASW-003102 (SP3T)
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20
(gold/tin) solder or conductive silver epoxy.
Ordering Information
Package
xx = 0G
Package
xx = 0W
Part Number
MASW-002102-1358(xx)
MASW-003102-1359(xx)
Gel Pack
Gel Pack
Waffle Pack
Waffle Pack
1. Yellow areas indicate ribbon/wire bonding pads
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Electrical Specifications: TA = 25°C, 20 mA
MA4SW210B-1 (SPDT)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
2 GHz
6 GHz
12 GHz
18 GHz
1.5
0.7
0.9
1.2
1.8
1.0
1.2
1.8
Insertion Loss
dB
—
2 GHz
6 GHz
12 GHz
18 GHz
55
47
40
36
60
50
45
40
Isolation
dB
—
2 GHz
6 GHz
12 GHz
18 GHz
14
15
15
13
Input Return Loss
Switching Speed2
dB
ns
—
—
—
—
—
50
MA4SW310B-1 (SP3T)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
2 GHz
6 GHz
12 GHz
18 GHz
1.6
0.8
1.0
1.3
2.0
1.1
1.3
1.9
Insertion Loss
Isolation
dB
—
2 GHz
6 GHz
12 GHz
18 GHz
54
47
40
36
59
50
45
40
dB
—
2 GHz
6 GHz
12 GHz
18 GHz
14
15
16
14
Input Return Loss
Switching Speed2
dB
ns
—
—
—
—
—
50
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Absolute Maximum Ratings3,4,5
Cleanliness
The chips should be handled in a clean environment
free of dust and organic contamination.
Parameter
Absolute Maximum
+33 dBm
RF CW Incident Power
Reverse Voltage
Wire / Ribbon Bonding
Thermo compression wedge bonding using 0.003” x
0.00025” ribbon or 0.001” diameter gold wire is
-50 V
Bias Current per Port
Operating Temperature
Storage Temperature
Junction Temperature
±50 mA @ +25°C
-65°C to +125°C
-65°C to +150°C
+175°C
recommended.
A
work stage temperature of
150°C - 200°C, tool tip temperature of 120°C - 150°
and a downward force of 18 to 22 grams should be
used. If ultrasonic energy is necessary, it should be
adjusted to the minimum level required to achieve a
good bond. Excessive power or force will fracture
the silicon beneath the bond pad causing it to lift.
RF bond wires and ribbons should be kept as short
as possible for optimum RF performance.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Chip Mounting
HMIC switches have Ti-Pt-Au backside metallization
and can be mounted using a gold-tin eutectic solder
or conductive epoxy. Mounting surface must be free
of contamination and flat.
Eutectic Die Attachment
Handling Procedures
An 80/20, gold-tin, eutectic solder is recommended.
Adjust the work surface temperature to 255oC and
the tool tip temperature to 265oC. After placing the
chip onto the circuit board re-flow the solder by
applying hot forming gas (95/5 Ni/H) to the top
surface of the chip. Temperature should be
approximately 290oC and not exceed 320oC for
more than 20 seconds. Typically no more than three
seconds is necessary for attachment. Solders rich in
tin should be avoided
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
Epoxy Die Attachment
A minimum amount of epoxy, 1 - 2 mils thick, should
be used to attach chip. A thin epoxy fillet should be
visible around the outer perimeter of the chip after
placement. Epoxy cure time is typically 1 hour at
150°C.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Typical RF Performance at TAMB = +25°C, 20 mA Bias Current
MASW-003102
MASW-002102
Isolation
Isolation
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8
10 12 14 16 18 20 22 24 26
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
Insertion Loss
Insertion Loss
2
0
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-2
-4
-6
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
Return Loss
Return Loss
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
-10
-15
-20
-25
-30
-35
-40
2
4
6
8 10 12 14 16 18 20 22 24 26
0
2
4
6
8
10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Series Diode Junction Temperature vs. Incident Power at 8 GHz
MASW-002102
140
120
100
80
5 mA
10 mA
20 mA
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
60
40
20
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
-00
MASW 2102Compression Power vs. Incident Power at 8 GHz
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
5 mA
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
10 mA
20 mA
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
6. The MASW-003100 contains the same PIN diodes and will have similar performance.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Operation of MASW-00x102 Series
Operation of the MASW-00x102 series PIN diode switches is achieved by simultaneous application of DC
currents to the bias pads. The required levels for the different states are shown in the tables below. The control
currents should be supplied by constant current sources. The nominal 40 - 60 Ω pull-up resistor voltage @ J4 and
J5 is usually -1 V for -20 mA and +20 mA for +1 V.
Driver / Bias Connections
MASW-002102 (SP2T)
MASW-003102 (SP3T)
DC Control Current (mA)
RF Output States
DC Control Current (mA)
RF Output States
J5
-20
+20
J6
+20
-20
J7
J1-J2
J1-J3
J1-J4
J4
J5
J1-J2
J1-J3
-20
+20
low loss
Isolation
+20
+20
low loss Isolation Isolation
Isolation low loss Isolation
+20
-20
Isolation
low loss
+20
+20
-20
Isolation Isolation low loss
J3
J2
RFOUT
RFOUT
J6
BIASIN
J3
RFOUT
J5
BIASIN
J4
BIASIN
J1 RFIN
J4
RFOUT
MASW-002102 (SP2T)
J2
RFOUT
J7
J5
BIASIN
BIASIN
J1 RFIN
MASW-003102 (SP3T)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW-00x102 Series
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Chip Outline Drawings7,8
MASW-002102 (SP2T)
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
B
C
D
E
F
0.066
0.048
0.004
0.004
0.012
0.029
0.030
0.029
0.005
0.005
0.070
1.680
1.780
0.052
0.006
0.006
0.013
0.030
0.031
0.030
REF.
REF.
1.230
0.100
0.090
0.292
0.735
0.766
0.732
0.129
0.129
1.330
0.150
0.140
0.317
0.760
0.791
0.757
REF.
REF.
G
H
J
K
MASW-003102 (SP3T
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
B
C
D
E
F
0.071
0.072
1.807
1.833
0.071
0.0045
0.031
0.029
0.006
0.004
0.005
0.034
0.064
0.066
0.005
0.0046
0.072
0.0055
0.032
0.030
0.007
0.005
0.006
0.035
0.065
0.067
REF.
1.797
0.100
0.781
0.732
0.152
0.099
0.125
0.871
1.617
1.683
0.1250
0.1180
1.823
0.150
0.807
0.758
0.178
0.125
0.151
0.897
1.643
1.709
REF.
REF.
G
H
J
K
L
M
N
REF.
7. Topside and backside metallization is gold, 2.5 µm thick typical.
8. Yellow areas indicate ribbon/wire bonding pads
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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