NPT1007_15 概述
200W RF Power Transistor
NPT1007_15 数据手册
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Gallium Nitride 28V, 200W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for narrowband and broadband
applications from from DC – 1200MHz
• 200W P3dB CW power at 900MHz in quadrature
combined or push-pull configuration
• 90W CW power from 500-1000MHz in application
design AD-014
• High efficiency from 14V to 28V
• 1.0 °C/W R with maximum TJ rating of 200°C
TH
• Robust up to 10:1 VSWR mismatch at all angles
with no device degradation
DC – 1200 MHz
14 – 28 Volt
GaN HEMT
• Subject to EAR99 export control
RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature
Combined Test Fixture2.
Symbol
Parameter
Min
Typ
Max
Units
P3dB
GSS
h
Average Output Power at 3dB Gain Compression
Small Signal Gain
52.0
17.3
57
53.0
18.3
63
-
-
-
dBm
dB
Drain Efficiency at 3dB Gain Compression21
10:1 VSWR at all phase angles
%
VSWR
No change in device performance
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
.
Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C
Measured in Nitronex Quadrature Combined Test Fixture2 .
Symbol
Parameter
Typ
Units
P3dB,PEP
P1dB,PEP
PIMD3
Peak Envelope Power at 3dB Gain Compression
Peak Envelope Power at 1dB Gain Compression
Peak Envelope Power at -35dBc IMD3
53.4
52.6
50.8
dBm
dBm
dBm
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
.
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
DC Specifications: Per Transistor, TA = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA)
VBDS
IDLK
100
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
-
9
18
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 36mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.13
-1.3
-1.0
0.14
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 270mA)
Drain Current
ID,MAX
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
19.0
20.5
-
A
Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
180
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C), both transistors on
175
Thermal Resistance (Junction-to-Case),
composite for both transistors on, TJ = 180°C
1.0
1.8
qJC
°C/W
Thermal Resistance (Junction-to-Case),
one transistor on, one off, TJ = 180°C
TSTG
TJ
Storage Temperature Range
-65 to 150
200
°C
°C
Operating Junction Temperature
HBM
MM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Charge Device Model ESD Rating (per JESD22-C101)
1C (>1000V)
A (>100V)
CDM
IV (>4000V)
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C Unless Otherwise Noted
DQ
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
P
SAT
(dBm)
Drain Efficiency
@ P (%)
Z (W)
S
Z (W)
L
G
(dB)
SS
SAT
500
900
1.4 + j0.1
1.6 - j1.5
1.8 - j2.7
2.0 + j0.5
2.3 - j1.5
3.5 - j2.8
50.0
24.0
70%
74%
62%
50.0
18.5
16.5
1200
49.5
73%
49.5dBm
Figure 2 - Load-Pull Contours, 500MHz,
= 25dBm, Z = 1.4 + j0.1 W
Figure 1 - Optimum Impedances for
P
IN
CW Performance
S
67%
48.5dBm
61%
49.5dBm
Figure 3 - Load-Pull Contours, 900MHz,
= 30dBm, Z = 1.6 - j1.5 W
Figure 4 - Load-Pull Contours, 1200MHz,
= 32dBm, Z = 1.8 - j2.7 W
P
IN
P
IN
S
S
NPT1007
Page 3
NDS-012 Rev. 3, April 2013
NPT1007
Load-Pull Data per Device Lead, Reference Plane at Device Leads
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
DQ
Figure 5 - Typical CW Performance,
over Frequency
Figure 6 - Typical CW Performance
over Frequency
Figure 7 - Typical Pulsed Performance,
Figure 8 - Typical CW Performance at V = 20V
DS
Frequency = 900MHz, Duty Cycle = 10%
Frequency = 900MHz
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Nitronex Quadrature Combined Test Fixture
VDS=28V, I =1400mA, TA=25°C unless otherwise noted.
DQ
Figure 9 - Typical IMD3 Performance,
Frequency = 900MHz, Tone spacing = 1MHz
Figure 10 - Typical CW Performance
over Temperature, Frequency = 900MHz
Typical Device Characteristics
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
DQ
Figure 11 - Quiescient Gate Voltage (VGSQ
Required to Reach IDQ over Temperature
)
Figure 12 - MTTF of NRF1 devices as a
function of junction temperature
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Ordering Information
1
Part Number
Description
NPT1007B
NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
customer products and applications, customers should provide adequate design and operating safeguards.
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©Nitronex, LLC 2012. All rights reserved.
NPT1007
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NDS-012 Rev. 3, April 2013
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