NPT1010_15 [TE]
100W RF Power Transistor;
| 型号： | NPT1010_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 100W RF Power Transistor |
| 文件： | 总10页 (文件大小：1231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT1010
Gallium Nitride 28V, 100W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC – 2000MHz
• 100W P3dB CW power at 900MHz
• 60-95 W PSAT CW power from 500-1000MHz in
broadband application design
• High efficiency from 14 - 28V
• 1.4 °C/W R with maximum TJ rating of 200°C
TH
• Robust up to 10:1 VSWR mismatch at all phase
angles with no damage to the device
DC – 2000 MHz
14 – 28 Volt
GaN HEMT
• Subject to EAR99 export control
RF Specifications (CW, 900MHz): VDS = 28V, IDQ = 700mA, TA = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
P1dB
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
49.0
-
50.0
49.0
19.7
64
-
-
-
-
dBm
dBm
dB
GSS
h
Small Signal Gain
18.7
57
Drain Efficiency at 3dB Gain Compression
10:1 VSWR at all phase angles
%
VSWR
No damage to the device
Figure 1 - Typical CW Performance in Load-Pull,
Figure 2 - Typical CW Performance in Load-Pull,
VDS = 28V, IDQ = 700mA
VDS = 28V, IDQ = 700mA
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
DC Specifications: TA = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA)
VBDS
IDLK
100
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
-
9
18
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 36mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.13
-1.3
-1.0
0.14
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 270mA)
Drain Current
ID,MAX
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
19.0
21.0
-
A
Thermal Resistance Specification
Symbol
Parameter
Min
Typ
Max
Units
Thermal Resistance (Junction-to-Case),
TJ = 180 °C
qJC
-
1.4
-
°C/W
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
180
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
125
TSTG
TJ
-65 to 150
200
°C
°C
Operating Junction Temperature
HBM
MM
CDM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Charge Device Model ESD Rating (per JESD22-C101)
1B (>500V)
Class A (≤200V)
IV (>1000V)
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =700mA, TA=25°C unless otherwise noted
DQ
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz)
Z (W)
S
Z (W)
L
P
SAT
(W)
G
SS
(dB)
Drain Efficiency @ P
(%)
SAT
500
900
2.8 + j2.2
1.1 - j0.5
1.1 - j3.6
1.1 - j4.9
2.7 + j2.0
1.9 + j0.6
2.0 - j1.2
1.9 - j3.8
100
24.5
71%
70%
63%
59%
100
100
89
21.0
17.0
14.5
1500
2000
Z is the source impedance
S
presented to the device.
Z is the load impedance
L
presented to the device.
Figure 3 - Optimum Impedances for CW
Performance. Z0 = 5 Ω
73%
68%
49dBm
49dBm
Figure 5 - Load-Pull Contours, 900MHz,
PIN = 32.5dBm, ZS = 1.1 - j0.5 Ω
Figure 4 - Load-Pull Contours, 500MHz,
PIN = 27dBm, ZS = 2.8 + j2.2 Ω
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =700mA, TA=25°C unless otherwise noted.
DQ
63%
48.5dBm
53%
48.5dBm
Figure 6 - Load-Pull Contours, 1500MHz,
PIN = 29dBm, ZS = 1.1 - j3.6 Ω
Figure 7 - Load-Pull Contours, 2000MHz,
PIN = 36dBm, ZS = 1.1 - j4.9 Ω
Figure 8 - Typical CW Performance Over Voltage in
Figure 9 - Typical CW Performance Over
Load-Pull, 900MHz
Temperature in Nitronex Test Fixture, 900MHz
Figure 10 - Quiescient Gate Voltage (VGSQ) Required
to Reach IDQ as a Function of Ambient Temperature,
VDS = 28V
Figure 11 - MTTF of NRF1 Devices as a
Function of Junction Temperature
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
RF Performance in 500-1000MHz Broadband Application Circuit
VDS=28V, I =700mA, TA=25°C unless otherwise noted
DQ
Figure 12 - Photograph of 500-1000MHz
broadband application circuit for NPT1010
Figure 13 - CW Performance in broadband
Figure 14 - CW drive up curves in broadband circuit.
circuit. Measurements (symbols) are connected
by a smoothing function (25 °C)
Figure 15 - CW Performance in broadband
circuit. Measurements (symbols) are connected
by a smoothing function (100 °C)
Figure 16 - CW Performance in broadband circuit
at different output powers connected by a smoothing
function
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
RF Performance in 500-1000MHz Broadband Application Circuit
VDS=28V, I =700mA, TA=25°C unless otherwise noted
DQ
Figure 17 - Input and output return loss of
the 500-1000MHz broadband application
circuit, PIN = -5dBm
Table 2: Power, gain, efficiency and temperature rise across frequency in the 500-1000MHz appli-
cation circiut
Frequency
P
Drain Efficiency
SAT
1
P
(W)
G
SS
(dB)
T
(°C)
SAT
J,RISE
(dBm)
48.9
49.3
49.8
48.3
48.1
48.0
49.4
49.7
50.0
49.0
48.3
@ P
(%)
SAT
(MHz)
500
550
600
650
700
750
800
850
900
950
1000
77.8
60
18.1
76
66
63
59
73
76
76
71
74
53
49
84.9
94.8
68.2
63.8
63.1
86.9
92.5
98.9
79.4
67.1
65
69
63
56
55
63
66
66
69
67
17.4
16.6
16.1
15.5
15.1
15.1
15.4
15.7
16.0
16.0
Note 1: Temperature rise is from junction to case and is calculated from the dissipated power using an RTH
value of 1.4°C/W
NPT1010
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NPT1010
Figure 18 - Schematic of 500-1000MHz application board for NPT1010
Figure 19 - Layout of 500-1000MHz application board for NPT1010
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
Table 3: NPT1010 500-1000MHz Application Board Build of Materials
Name
Value
Tolerance
Size
Vendor
Vendor Number
C1
C2
100pF
100pF
1.0uF
5%
5%
.11"X.11"
.11"X.11"
1812
ATC
ATC
ATC100B101J
ATC100B101J
C3, C6
C4, C7
C5, C8
C9
10%
10%
1%
AVX Corp
Kemet
18121C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
UPW1C151MED
ELXY 630ELL271MK25S
ATC100B560J
0.1uF
1206
0.01uF
150uF
270uF
56pF
1206
AVX Corp
Nichicon
United Chmi-Con
ATC
20%
20%
1%
3216(EIA)
10mm(dia)
.11"X.11"
.11"X.11"
.11"X.11"
805
C10
C11, C12
C14, C15
C13
4.7pF
1%
ATC
ATC100B4R7J
15pF
1%
ATC
ATC100B150J
R1
10 ohms
0.33 ohms
7.5 ohms
12nH
5%
Panasonic
Panasonic
Stackpole Electron-
Coilcraft
ERJ-6ENF10R0V
ERJ-6RQFR33V
RHC 2512 10 1% R
0805CS-120XJB
R2, R3
R4, R5
L1
1%
805
1%
2512
5%
805
L2
4 Turn, 16G, 0.2"ID Copper Wire
Amphenol
N Connector
172195
Rogers 6010LM 25mil, 1oz,
εr = 10.2
nbd-079_Rev1
Rogers
Copper Heatsink
BNC Connectors
Tyco Electronics
1052566-1
91292A012
Metric 18-8 SS
Socket head
Cap Screw M2.5
Thread, 8mm
Length, 0.45mm
Pitch
McMaster Carr
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
1
Ordering Information
Part Number
Description
NPT1010B
NPT1010 in AC360B-2 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 20 - AC360B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT1010
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NDS-023 Rev. 3, April 2013
NPT1010
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NPT1010
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NDS-023 Rev. 3, April 2013
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