BQ25606RGET_技术文档

BQ25606

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

BQ25606 独立单节3.0A 降压电池充电器

– ±5% 0.5A、1.2A 和1.8A 输入电流调节

• 安全相关认证：

1 特性

• 高效1.5MHz 同步开关模式降压充电器

– 经IEC 62368-1 CB 认证

– 在2A 电流（5V 输入）下具有92% 的充电效率

– 针对USB 电压输入(5V) 进行了优化

• 支持USB On-The-Go (OTG)

2 应用

• EPOS、便携式扬声器

• 手机附件

• 医疗设备

– 具有高达1.2A 输出的升压转换器

– 在1A 输出下具有92% 的升压效率

– 精确的恒定电流(CC) 限制

– 高达500µF 容性负载的软启动

– 输出短路保护

3 说明

BQ25606 是高度集成的独立 3.0A 开关模式电池充电

管理和系统电源路径管理器件，适用于单节锂离子和锂

聚合物电池。该解决方案在系统和电池之间高度集成输

入反向阻断 FET（RBFET，Q1）、高侧开关 FET

（HSFET，Q2）、低侧开关 FET（LSFET，Q3）以

及电池 FET（BATFET，Q4）。其低阻抗电源路径对

开关模式运行效率进行了优化、缩短了电池充电时间并

延长了放电阶段的电池使用寿命。

• 单个输入，支持USB 输入和高电压适配器

– 支持3.9V 至13.5V 输入电压范围，绝对最大输

入电压额定值为22V

– 通过高达4.6V 的输入电压限制(VINDPM) 进行

最大功率跟踪

– VINDPM 阈值自动跟踪电池电压

– 自动检测USB SDP、DCP 以及非标准适配器

• 高电池放电效率，电池放电MOSFET 为19.5mΩ

• 窄VDC (NVDC) 电源路径管理

器件信息⁽¹⁾

封装尺寸（标称值）

器件型号

BQ25606

封装

VQFN (24)

4.00mm × 4.00mm

– 无需电池或深度放电的电池即可瞬时启动

– 电池充电模式下实现理想的二极管运行

• 高集成度，包括所有MOSFET、电流感测和环路补

偿

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

• 在系统待机电压下具有58µA 的低电池泄漏电流

• 高精度

USB

VBUS

SW

– 充电电压调节范围为±0.5%

– ±6% 1.2A 和1.8A 充电电流调节

BTST

SYS

BAT

ILIM

ICHG

CE

I_CHG

REGN

+

VSET

TS

简化版应用

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLUSCK6

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

Table of Contents

9.3 Feature Description...................................................19

10 Application and Implementation................................26

10.1 Application Information........................................... 26

10.2 Typical Application.................................................. 27

11 Power Supply Recommendations..............................34

12 Layout...........................................................................35

12.1 Layout Guidelines................................................... 35

12.2 Layout Example...................................................... 35

13 Device and Documentation Support..........................37

13.1 Device Support....................................................... 37

13.2 接收文档更新通知................................................... 37

13.3 支持资源..................................................................37

13.4 Trademarks.............................................................37

13.5 Electrostatic Discharge Caution..............................37

13.6 术语表..................................................................... 37

14 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 说明（续）.........................................................................4

6 Device Comparison Table...............................................5

7 Pin Configuration and Functions...................................6

8 Specifications.................................................................. 8

8.1 Absolute Maximum Ratings........................................ 8

8.2 ESD Ratings............................................................... 8

8.3 Recommended Operating Conditions.........................8

8.4 Thermal Information....................................................9

8.5 Electrical Characteristics.............................................9

8.6 Timing Requirements................................................13

8.7 Typical Characteristics..............................................15

9 Detailed Description......................................................17

9.1 Overview...................................................................17

9.2 Functional Block Diagram.........................................18

Information.................................................................... 38

4 Revision History

注：以前版本的页码可能与当前版本的页码不同

Changes from Revision B (November 2019) to Revision C (September 2021)

Page

• 添加了IEC 62368-1 CB 特性..............................................................................................................................1

• 删除了整个数据表中的WEBENCH.................................................................................................................... 1

• 从节5 中的第三段中删除了“为零”..................................................................................................................4

• Added 节6 .........................................................................................................................................................5

• Added 节9.3.4.1 ..............................................................................................................................................21

• Added 节9.3.4.2 ..............................................................................................................................................21

• Added 节9.3.4.3 ..............................................................................................................................................21

• Added sentence to third paragraph in 节9.3.5.4 .............................................................................................22

• Changed "fault" to "the timer" in last paragraph of 节9.3.5.6 ..........................................................................24

• Added 节9.3.6 .................................................................................................................................................24

• Added 节9.3.6.1 ..............................................................................................................................................24

• Added 节9.3.6.2 ..............................................................................................................................................24

• Added 表10-1 ..................................................................................................................................................27

• Changed > to ≤in last paragraph in 节10.2.2.3 ............................................................................................ 28

Changes from Revision A (August 2017) to Revision B (November 2019)

Page

• 更改了“应用”部分........................................................................................................................................... 1

Changes from Revision * (May 2017) to Revision A (August 2017)

Page

• 更改了数据表标题...............................................................................................................................................1

• 从节1 中删除了“200nS 快速关闭”................................................................................................................. 1

• 更改了简化应用原理图........................................................................................................................................1

• Changed ACDRV pin references to "NC" in 节7 section................................................................................... 6

• Deleted ACDRV pin references from Pin Functions table.................................................................................. 6

• Changed VAC pin description in Pin Functions table......................................................................................... 6

• Deleted ACDRV pin references from 节8.1 table...............................................................................................8

• Added 节8.2 table..............................................................................................................................................8

2

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

• Deleted VAC debounce time fromTiming Requirements table..........................................................................13

• Changed 节9.2 ................................................................................................................................................18

• Changed Power Up from Input Source section................................................................................................ 19

• Deleted Power Up OVPFET section.................................................................................................................19

• Deleted OVPFET Startup Control timing illustration ........................................................................................19

• Added subsection explaining D+/D–detection ...............................................................................................19

• Changed Input Overvoltage (ACOV) section....................................................................................................25

• Changed BQ25606 Application Diagram schematic.........................................................................................27

Submit Document Feedback

3

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

5 说明（续）

BQ25606 可为独立充电器和便携式设备提供快速充电功能和高输入电压支持。其输入电压和电流调节可以为电池

提供最大的充电功率。它还集成了自举二极管以进行高侧栅极驱动，从而简化系统设计。

该器件支持多种输入源，包括标准 USB 主机端口、USB 充电端口以及兼容USB 的高电压适配器。该器件根据内

置 USB 接口设置默认输入电流限值。该器件符合 USB 2.0 和 USB 3.0 电源规范，具有输入电流和电压调节功

能。当内置 USB 接口确定输入适配器未知时，该器件的输入电流限值由 ILIM 引脚设置电阻器值决定。该器件还

具有高达1.2A 的恒定电流限制能力，能够为VBUS 提供5.15V 的电压，符合USB On-the-Go (OTG) 运行功率额

定值规范。

电源路径管理将系统电压调节至稍高于电池电压的水平，但是不会下降至 3.5V 最小系统电压以下。借助于这个特

性，即使在电池电量完全耗尽或者电池被拆除时，系统也能保持运行。当达到输入电流限值或电压限值时，电源

路径管理自动将充电电流减少。随着系统负载持续增加，电源路径将使电池放电，直到满足系统电源需求。该补

充模式可防止输入源过载。

此器件在无需软件控制情况下启动并完成一个充电周期。它检测电池电压并通过三个阶段为电池充电：预充电、

恒定电流和恒定电压。在充电周期的末尾，当充电电流低于预设限值并且电池电压高于再充电阈值时，充电器自

动终止。如果已完全充电的电池降至再充电阈值以下，则充电器自动启动另一个充电周期。

此充电器提供针对电池充电和系统运行的多种安全特性，其中包括电池负温度系数热敏电阻监视、充电安全性计

时器和过压/过流保护。当结温超过 110°C 时，热调节会减小充电电流。STAT 输出报告充电状态和任何故障状

况。其他安全特性包括针对充电和升压模式的电池温度感应、热调节和热关断以及输入UVLO 和过压保护。

该器件采用24 引脚4mm x 4mm QFN 封装。

4

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

6 Device Comparison Table

BQ25606

58 μA

BQ25616

9.5 μA

BQ25616J

9.5 μA

130 ns

Quiescent battery current (BAT,SYS,SW)

VBUS OVP reaction-time

Input voltage regulation accuracy

TS profile

200 ns

130 ns

±3%

±2%

JEITA

Hot/Cold

20 hr

JEITA

Charge safety timer accuracy

Charge voltage limit

10 hr

20 hr

4.2 V/4.35 V/4.4 V

±0.5%

4.1 V/4.2 V/4.35 V

±0.4%

4.1 V/4.2 V/4.35 V

±0.4%

Battery voltage regulation

ACDRV

No

Yes

Submit Document Feedback

5

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

7 Pin Configuration and Functions

VAC

NC

1

2

3

4

5

6

18

17

16

15

14

13

GND

SYS

BAT

D+

Thermal

Pad

Dœ

STAT

OTG

7

8

9

10 11 12

(Not to scale)

图7-1. BQ25606 RGE Package 24-Pin VQFN Top View

表7-1. Pin Functions

DESCRIPTION

NAME

I/O

NO.

2

NC

No connection. This pin must be floating.

13

14

Battery connection point to the positive terminal of the battery pack. The internal current sensing resistor

is connected between SYS and BAT. Connect a 10-µF capacitor closely to the BAT pin.

BAT

P

PWM high side driver positive supply. internally, the BTST is connected to the cathode of the boost-strap

diode. Connect a 0.047-μF bootstrap capacitor from SW to BTST.

BTST

CE

21

9

P

DI

Charge enable pin. When this pin is driven low, battery charging is enabled.

Positive line of the USB data line pair. D+/D–based USB host/charging port detection. The detection

includes data contact detection (DCD), primary and secondary detection in BC1.2 and nonstandard

adaptors.

D+

3

4

AIO

Negative line of the USB data line pair. D+/D–based USB host/charging port detection. The detection

includes data contact detection (DCD), primary and secondary detection in BC1.2 and nonstandard

adaptors.

D–

17

18

GND

P

Power ground and signal ground.

I_CHGpin sets the charge current limit. A resistor is connected from I_CHGpin to ground to set charge

current limit as I_CHG= K_ICHG/R_ICHG. The acceptable range for charge current is 300 mA to 3000 mA.

ICHG

10

AI

ILIM sets the input current limit. A resistor is connected from ILIM pin to ground to set the input current

limit as IINDPM = K_ILIM/R_ILIM. The acceptable range for ILIM current is 500 mA to 3200 mA.

The resistor based input current limit is effective only when the input adapter is detected as unknown.

Otherwise, the input current limit is determined by D+/D–detection outcome.

ILIM

8

AI

OTG

PG

6

7

DI

Boost mode enable pin. When this pin is pulled HIGH, OTG is enabled. OTG cannot be floating.

Open drain active low power good indicator. Connect to the pull up rail through a 10-kΩresistor. LOW

indicates a good input if the input voltage is between UVLO and ACOV, above SLEEP mode threshold,

and input current limit is above 30 mA.

DO

Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of HSFET. Connect a

10-μF ceramic capacitor between PMID and GND.

PMID

23

P

6

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

表7-1. Pin Functions (continued)

I/O

DESCRIPTION

NAME

NO.

PWM low side driver positive supply output. Internally, REGN is connected to the anode of the boost-

strap diode. Connect a 4.7-μF (10-V rating) ceramic capacitor from REGN to analog GND. The

capacitor should be placed close to the IC.

REGN

22

P

Open-drain interrupt output. Connect the STAT pin to a logic rail via 10-kΩ resistor. The STAT pin

indicates charger status.

STAT

5

DO

Charge in progress: LOW

Charge complete or charger in SLEEP mode: HIGH

Charge suspend (fault response): Blink at 1 Hz.

19

20

Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel

HSFET and the drain of the n-channel LSFET. Connect a 0.047-μF bootstrap capacitor from SW to

BTST.

SW

P

15

16

Converter output connection point. The internal current sensing resistor is connected between SYS and

BAT. Connect a 20-µF capacitor close to the SYS pin.

SYS

Temperature qualification voltage input to support JEITA profile. Connect a negative temperature

coefficient thermistor. Program temperature window with a resistor divider from REGN to TS to GND.

Charge suspends when TS pin voltage is out of range. Recommend 103AT-2 thermistor.

TS

11

1

AI

P

VAC

VBUS

Input voltage sensing. This pin must be shorted to the VBUS pin.

Charger input voltage. The internal n-channel reverse block MOSFET (RBFET) is connected between

VBUS and PMID with VBUS on source. Place a 1-uF ceramic capacitor from VBUS to GND and place it

as close as possible to the IC.

24

VSET pin sets default battery charge voltage in the BQ25606. Program battery regulation voltage with a

resistor pull-down from VSET to GND.

R_PD> 50 kΩ(float pin) = 4.208 V

R_PD< 500 Ω(short to GND) = 4.352 V

5 kΩ< R_PD< 25 kΩ= 4.400 V

VSET

12

AI

P

Ground reference for the device that is also the thermal pad used to conduct heat from the device. This

connection serves two purposes. The first purpose is to provide an electrical ground connection for the

device. The second purpose is to provide a low thermal-impedance path from the device die to the PCB.

This pad should be tied externally to a ground plane.

Thermal Pad

Submit Document Feedback

7

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

Voltage Range (with respect to

GND)

VAC

22

V

–2

Voltage Range (with respect to

VBUS (converter not switching)⁽²⁾

GND)

22

V

–2

Voltage Range (with respect to

BTST, PMID (converter not switching)⁽²⁾

GND)

–0.3

Voltage Range (with respect to

GND)

SW

16

7

V

–2

Voltage Range (with respect to

GND)

BTST to SW

–0.3

Voltage Range (with respect to

GND)

7

V

D+, D–

–0.3

Voltage Range (with respect to

GND)

REGN, TS, CE, PG, BAT, SYS (converter not switching)

Output Sink Current

STAT

6

7

mA

V

Voltage Range (with respect to

GND)

VSET, ILIM, ICHG, OTG

–0.3

Voltage Range (with respect to

GND)

PGND to GND (QFN package only)

0.3

V

Operating junction temperature, T_J

Storage temperature, T_stg

150

°C

–40

–65

(1) Stresses beyond those listed under Absolute maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.

(2) VBUS is specified up to 22 V for a maximum of one hour at room temperature

8.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/

ESDA/JEDEC JS-001, all pins⁽¹⁾

±2000

V_(ESD)

Electrostatic discharge

V

Charged device model (CDM), per

JEDEC specification JESD22-C101, all

pins⁽²⁾

±250

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

MIN

NOM

MAX UNIT

V_BUS

I_in

Input voltage

3.9

13.5 ⁽¹⁾

V

A

V

A

Input current (VBUS)

Output current (SW)

Battery voltage

3.25

3.0

4.4

3.0

6

I_SYSOP

V_BATOP

I_BATOP

Fast charging current

Discharging current (continuous)

8

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.3 Recommended Operating Conditions (continued)

MIN

NOM

MAX UNIT

85 °C

T_A

Operating ambient temperature

–40

(1) The inherent switching noise voltage spikes should not exceed the absolute maximum voltage rating on either the BTST or SW pins. A

tight layout minimizes switching noise.

8.4 Thermal Information

BQ25606

THERMAL METRIC ⁽¹⁾

RGE (VQFN)

UNIT

24 PINS

31.9

27

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

9.2

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

0.4

Ψ_JT

9.2

Ψ_JB

R_θJC(bot)

2.8

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics Application

Report.

8.5 Electrical Characteristics

V_{VAC_PRESENT}< V_VAC< V_{VAC_OV}and V_VAC> V_BAT+ V_SLEEP, T_J= –40°C to 125°C and T_J= 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

QUIESCENT CURRENTS

V_BAT= 4.5 V, V_BUS< V_AC-UVLOZ

leakage between BAT and VBUS,

T_J< 85°C

,

Battery discharge current (BAT, SW,

SYS) in buck mode

I_BAT

5

µA

Battery discharge current (BAT, SW,

SYS)

I_BAT

V_BAT= 4.5 V, No VBUS, T_J< 85°C

58

85

3

µA

Input supply current (VBUS) in buck

mode

V_VBUS= 12 V, V_VBUS> V_VBAT

converter not switching

,

I_VBUS

1.5

mA

V_VBUS> VUVLO, V_VBUS> V_VBAT

converter switching, VBAT = 3.8V,

ISYS = 0A

,

Input supply current (VBUS) in buck

mode

I_VBUS

3

mA

V_BAT= 4.2 V, boost mode, I_VBUS

0 A, converter switching

=

I_BOOST

Battery discharge current in boost mode

VBUS, VAC AND BAT PIN POWER UP

V_{BUS_OP}

VBUS operating range

REGN turn-on threshold

V_VBUSrising

V_VACrising

3.9

13.5

3.97

V

V_{VAC_PRESENT}

3.36

3.65

300

V_{VAC_PRESENT_H}

mV

V_VACfalling

YS

(V_VAC–V_VBAT), V_{BUSMIN_FALL}

_BAT≤V_REG, VAC falling

≤

V_SLEEP

Sleep mode falling threshold

Sleep mode rising threshold

37

76

126

mV

V

(V_VAC–V_VBAT), V_{BUSMIN_FALL}

_BAT≤V_REG, VAC rising

V_SLEEPZ

130

220

350

V

V_{VAC_OV_RISE}

V_{VAC_OV_HYS}

VAC Overvoltage rising threshold

VAC Overvoltage hysteresis

VAC rising

VAC falling

13.5

14.28

520

14.91

V

mV

Battery depletion falling threshold (Q4

turn-off threshold)

V_{BAT_DPL_FALL}

V_{BAT_DPL_RISE}

V_BATfalling

V_BATrising

2.15

2.35

2.6

V

Battery Depletion rising threshold (Q4

turn-on threshold)

2.82

Submit Document Feedback

9

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.5 Electrical Characteristics (continued)

V_{VAC_PRESENT}< V_VAC< V_{VAC_OV}and V_VAC> V_BAT+ V_SLEEP, T_J= –40°C to 125°C and T_J= 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

V_BATrising

MIN

TYP

180

3.8

MAX

UNIT

mV

V

V_{BAT_DPL_HYST}

V_{BUSMIN_FALL}

V_{BUSMIN_HYST}

I_BADSRC

Battery Depletion rising hysteresis

Bad adapter detection falling threshold

Bad adapter detection hysteresis

Bad adapter detection current source

V_BUSfalling

3.65

3.93

200

30

mV

mA

Sink current from VBUS to GND

POWER PATH

V_VBAT< V_{SYS_MIN = 3.5V}, charge

enabled or disabled

V_{SYS_MIN}

V_SYS

System regulation voltage

3.5

3.68

V

I_SYS= 0 A, V_VBAT> V_SYSMIN

,

V_BAT+ 50

mV

charge disabled

Top reverse blocking MOSFET on-

resistance between VBUS and PMID -

Q1

R_ON(RBFET)

45

-40°C≤T_A≤125°C

mΩ

Top switching MOSFET on-resistance

between PMID and SW - Q2

V_REGN= 5 V , -40°C≤T_A≤

125°C

R_ON(HSFET)

R_ON(LSFET)

V_FWD

62

70

30

mΩ

mV

Bottom switching MOSFET on-

resistance between SW and GND - Q3

V_REGN= 5 V , -40°C≤T_A≤

125°C

BATFET forward voltage in supplement

mode

QFN package, Measured from

BAT to SYS, V_BAT= 4.2V, T_J=

25°C

R_ON(BAT-SYS)

SYS-BAT MOSFET on-resistance

19.5

24

30

mΩ

QFN package, Measured from

BAT to SYS, V_BAT= 4.2V, T_J= –

40 - 125°C

R_ON(BAT-SYS)

BATTERY CHARGER

SYS-BAT MOSFET on-resistance

R_VSET> 50 kΩ, –40 ≤T_J≤

85°C

4.187

4.330

4.378

4.208

4.352

4.4

4.229

4.374

4.422

V

R_VSET< 500 Ω, –40 ≤T_J≤

85°C

V_BATREG

Charge voltage

R_VSET= 10 kΩ, –40 ≤T_J≤

85°C

V_BAT= 4.208 V or V_BAT= 4.352 V,

–40 ≤T_J≤85°C

V_{BATREG_ACC}

Charge voltage setting accuracy

0.5%

3000

715

–0.5%

0

I_{CHG_REG_RANGE}Charge current regulation range

mA

R_ICHG= 1100 Ω, V_VBAT= 3.1 V or

V_VBAT= 3.8 V

I_{CHG_REG}

Charge current regulation

516

615

R_ICHG= 1100 Ω, V_VBAT= 3.1 V or

V_VBAT= 3.8 V

I_{CHG_REG_ACC}

I_{CHG_REG}

Charge current regulation accuracy

Charge current regulation

-16%

1.14

16%

1.28

1.218

A

R_ICHG= 562 Ω, V_VBAT= 3.1 V or

V_VBAT= 3.8 V

R_ICHG= 562 Ω, V_BAT= 3.1 V or

V_BAT= 3.8 V

I_{CHG_REG}

I_{CHG_REG_ACC}

K_ICHG

Charge current regulation accuracy

Charge current regulation

-6%

1.715

-5%

6%

1.89

5%

R_ICHG= 372 Ω, V_VBAT= 3.1 V or

V_VBAT= 3.8 V

1.813

677

A

R_ICHG= 372 Ω, V_VBAT= 3.1 V or

V_VBAT= 3.8 V

Charge current regulation accuracy

Charge current regulation setting ratio

R_ICHG= 372 Ω, 562 ΩV_VBAT

=

639

715

6%

A×Ω

3.1 V or V_VBAT= 3.8 V

Charge current regulation setting ratio

accuracy

R_ICHG= 372Ω, 562 ΩV_VBAT

=

K_{ICHG_ACC}

-6%

3.1 V or V_VBAT= 3.8 V

10

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.5 Electrical Characteristics (continued)

V_{VAC_PRESENT}< V_VAC< V_{VAC_OV}and V_VAC> V_BAT+ V_SLEEP, T_J= –40°C to 125°C and T_J= 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

Fast charge to precharge

Pre-charge to fast charge

MIN

2.67

3.0

TYP

2.8

MAX

2.87

3.24

UNIT

V

V_{BATLOWV_FALL}Battery LOWV falling threshold

V_{BATLOWV_RISE}Battery LOWV rising threshold

3.1

V

R_ICHG= 1100 Ω, V_VBAT= 2.6 V,

I_PRECHG= 5% of I_CHG= 615mA

I_PRECHG

Precharge current regulation

21

3.4%

48

38

6.2%

67

mA

Percentage of I_CHG,R_ICHG= 1100

Ω, V_VBAT= 2.6 V, I_CHG= 615mA

I_{PRECHG_ACC}

I_PRECHG

I_{PRECHG_ACC}

I_PRECHG

I_{PRECHG_ACC}

I_TERM

Precharge current regulation accuracy

Precharge current regulation

R_ICHG= 562 Ω, V_VBAT= 2.6 V,

I_PRECHG= 5% of I_CHG= 1.218A

mA

Percentage of I_CHG,R_ICHG= 562

Ω, V1330 = 2.6 V, I_CHG= 1.218A

Precharge current regulation accuracy

Precharge current regulation

3.9%

76

5.5%

97

R_ICHG= 372 Ω, V_VBAT= 2.6 V,

I_PRECHG= 5% of I_CHG= 1.813A

mA

Percentage of I_CHG,R_ICHG= 372

Ω, V_VBAT= 2.6 V, I_CHG= 1.813A

Precharge current regulation accuracy

Termination current regulation

4.1%

26

5.4%

100

R_ICHG= 562 Ω, V_VBAT

=

4.35V,_CHG= 1.218A

Percentage of I_CHG, R_ICHG= 562

Ω, V_VBAT= 4.35 V, I_CHG= 1.218 A

I_{TERM_ACC}

I_TERM

Termination current regulation accuracy

Termination current regulation

2.1%

56

8.3%

126

R_ICHG= 372 Ω, V_VBAT= 4.35 V,

I_CHG= 1.813 A

100

mA

Percentage of I_CHG, R_ICHG= 372

Ω, V_VBAT= 4.35 V, I_CHG= 1.813 A

I_{TERM_ACC}

Termination current regulation accuracy

3.0%

7.0%

V_SHORT

V_SHORTZ

I_SHORT

Battery short voltage

V_VBATfalling

V_VBATrising

V_VBAT< V_SHORTZ

V_BATfalling

1.85

2.05

70

2

2.25

90

2.15

2.35

110

V

Battery short voltage

V

Battery short current

mA

mV

mA

V_RECHG

I_SYSLOAD

Recharge Threshold below V_{BAT_REG}

System discharge load current

87

121

30

156

V_SYS= 4.2 V

INPUT VOLTAGE AND CURRENT REGULATION

V_{DPM_VBAT}Input voltage regulation limit

V_{DPM_VBAT_ACC}Input voltage regulation accuracy

V_VBAT< 4.1 V (V_VBAT= 3.6 V)

4.171

4.3

4.429

3%

V

–3%

V_VBUS= 5 V, USB500 charge port

detected by DPDM , –40 ≤T_J≤

85°C

I_INDPM

I_{INDPM_ACC}

K_ILIM

USB input current regulation limit

Input current regulation limit

448

505

500

550

mA

A

R_ILIM= 910 Ω, unknown adaptor

detected by DPDM , –40 ≤T_J≤

85°C

526

1276

1.8

R_ILIM= 374 Ω, unknown adaptor

detected by DPDM , –40 ≤T_J≤

85°C

Input current regulation limit accuracy

Input current regulation limit

1220

1.73

–5%

459

1330

1.871

5%

R_ILIM= 265 Ω, unknown adaptor

detected by DPDM , –40 ≤T_J≤

85°C

R_ILIM= 265 Ω, 374 Ω, 910 Ω,

unknown adaptor detected by

DPDM , –40 ≤T_J≤85°C

Input current regulation limit accuracy

R_ILIM= 910 Ω, 374 Ω, 265 Ω,

unknown adaptor detected by

DPDM, –40 ≤T_J≤85°C

Input current setting ratio, I_LIM= K_ILIM

R_ILIM

/

478

500

A×Ω

Submit Document Feedback

11

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.5 Electrical Characteristics (continued)

V_{VAC_PRESENT}< V_VAC< V_{VAC_OV}and V_VAC> V_BAT+ V_SLEEP, T_J= –40°C to 125°C and T_J= 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

R_ILIM= 910 Ω, 374 Ω, 265 Ω,

unknown adaptor detected by

DPDM, –40 ≤T_J≤85°C

Input current setting ratio, I_LIM= K_ILIM

R_ILIM

/

K_{ILIM_ACC}

5%

–5%

Input current limit during system start-up

sequence

I_{IN_START}

200

mA

BAT PIN OVERVOLTAGE PROTECTION

V_BATrising, as percentage of

V_{BAT_REG}

V_{BATOVP_RISE}

V_{BATOVP_FALL}

Battery overvoltage threshold

103%

101%

104%

102%

105%

103%

V_BATfalling, as percentage of

V_{BAT_REG}

THERMAL REGULATION AND THERMAL SHUTDOWN

Junction Temperature Regulation

T_{JUNCTION_REG}

Threshold

110

°C

T_SHUT

Thermal Shutdown Rising Temperature Temperature Increasing

Thermal Shutdown Hysteresis

160

30

°C

T_{SHUT_HYST}

JEITA THERMISTOR COMPARATOR (BUCK MODE)

T1 (0°C) threshold, Charge suspended Charger suspends charge. As

V_T1

V_T2

72.4%

69%

73.3%

71.5%

68%

74.2%

74%

T1 below this temperature.

Percentage to V_REGN

Falling

As Percentage to V_REGN

T2 (10°C) threshold, Charge back to

I_CHG/2 and 4.2 V below this temperature

As percentage of V_REGN

As Percentage to V_REGN

67.2%

66%

69%

Falling

66.8%

67.7%

T3 (45°C) threshold, charge back to

ICHG and 4.05V above this

temperature.

Charger suspends charge. As

Percentage to V_REGN

V_T3

43.8%

44.7%

45.8%

V_T3

V_T5

Falling

As Percentage to V_REGN

45.1%

33.7%

34.5%

45.7%

34.2%

35.3%

46.2%

35.1%

36.2%

T5 (60°C) threshold, charge suspended

above this temperature.

Falling

COLD OR HOT THERMISTER COMPARATOR (BOOST MODE)

As Percentage to V_REGN(Approx.

–20°C w/ 103AT), –20°C ≤

T_J≤125°C

Cold Temperature Threshold, TS pin

Voltage Rising Threshold

V_BCOLD

V_BHOT

79.5%

78.5%

30.2%

33.8%

80%

79%

80.5%

79.5%

32.2%

34.9%

Falling

–20°C ≤T_J≤125°C

As Percentage to V_REGN(Approx.

60°C w/ 103AT), –20°C ≤T_J≤

125°C

Hot Temperature Threshold, TS pin

Voltage falling Threshold

31.2%

34.4%

Rising

–20°C ≤T_J≤125°C

CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)

HSFET cycle-by-cycle over-current

I_{HSFET_OCP}

threshold

5.2

6.0

8.0

A

I_{BATFET_OCP}

System over load threshold

PWM

Oscillator frequency, buck mode

Oscillator frequency, boost mode

1320

1170

1500

1412

97%

1680

1500

kHz

f_SW

PWM switching frequency

D_MAX

Maximum PWM duty cycle⁽¹⁾

BOOST MODE OPERATION

V_{OTG_REG}Boost mode regulation voltage

V_VBAT= 3.8 V, I_(PMID)= 0 A

4.972

5.126

5.280

V

12

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.5 Electrical Characteristics (continued)

V_{VAC_PRESENT}< V_VAC< V_{VAC_OV}and V_VAC> V_BAT+ V_SLEEP, T_J= –40°C to 125°C and T_J= 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

-3

TYP

MAX

3

UNIT

%

V_{OTG_REG_ACC}

V_{BATLOWV_OTG}

Boost mode regulation voltage accuracy V_VBAT= 3.8 V, I_(PMID)= 0 A

Battery voltage exiting boost mode

Battery voltage entering boost mode

OTG mode output current limit

OTG overvoltage threshold

V_VBATfalling

V_VBATrising

2.6

2.9

1.2

5.55

2.8

3.0

1.4

5.8

2.9

V

3.15

1.6

V

I_OTG

A

V_{OTG_OVP}

REGN LDO

V_REGN

Rising threshold

6.15

V

REGN LDO output voltage

V_VBUS= 9 V, I_REGN= 40 mA

V_VBUS= 5 V, I_REGN= 20 mA

5.6

4.6

6

6.65

4.9

V

V_REGN

4.7

LOGIC I/O PIN CHARACTERISTICS (CE, PSEL, SCL, SDA, INT)

V_ILO

V_IH

Input low threshold CE

0.4

V

Input high threshold CE

1.3

I_BIAS

V_ILO

V_IH

High-level leakage current CE

Input low threshold OTG

Input high threshold OTG

High-level leakage current OTG

Pull up rail 1.8 V

1

µA

V

0.4

V

I_BIAS

1

µA

LOGIC I/O PIN CHARACTERISTICS (PG, STAT)

V_OLLow-level output voltage

D+/D–DETECTION

D+ Threshold for Non-standard adapter

0.4

V

V_{D+_1P2}

(combined V1P2_VTH_LO and

V1P2_VTH_HI)

1.05

1.35

V

I_{D+_LKG}

Leakage current into D+

Voltage source (600 mV)

D–current sink (100 µA)

D–resistor to ground (19 kΩ)

HiZ

-1

500

1

700

150

24.8

µA

mV

µA

V_{D–_600MVSRC}

I_{D–_100UAISNK}

R_{D–_19K}

600

100

V_D–= 500 mV,

50

14.25

kΩ

D–comparator threshold for primary

detection

V_{D–_0P325}

250

400

mV

D–pin Rising

D–Threshold for non-standard adapter

(combined V2P8_VTH_LO and

V2P8_VTH_HI)

V_{D–_2P8}

2.55

2.85

V

D–Comparator threshold for non-

standard adapter (For non-standard –

same as BQ2589x)

V_{D–_2P0}

1.85

2.15

D–Threshold for non-standard adapter

(combined V1P2_VTH_LO and

V1P2_VTH_HI)

V_{D–_1P2}

I_{D–_LKG}

1.05

-1

1.35

1

V

HiZ

µA

Leakage current into D–

(1) Specified by design. Not production tested.

8.6 Timing Requirements

PARAMETER

MIN

NOM

MAX

UNIT

VBUS/BAT POWER UP

VAC rising above ACOV threshold to

turn off Q2

t_ACOV

VBUS OVP reaction time

200

ns

t_BADSRC

Bad adapter detection duration

30

ms

t_{TERM_DGL}

Deglitch time for charge termination

250

Submit Document Feedback

13

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.6 Timing Requirements (continued)

PARAMETER

MIN

NOM

MAX

UNIT

t_{RECHG_DGL}

Deglitch time for recharge

250

ms

System over-current deglitch time to

turn off Q4

t_{SYSOVLD_DGL}

100

µs

Battery overvoltage deglitch time to

disable charge

t_BATOVP

t_SAFETY

1

µs

hr

Typical Charge Safety Timer Range

8

10

12

14

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.7 Typical Characteristics

100

95

90

85

80

75

70

65

60

100

95

90

85

80

75

70

65

60

55

50

VBUS Voltage

5 V

V_BAT= 3.2 V

V_BAT= 3.8 V

V_BAT= 4.1 V

9 V

12 V

0

0.5

1

1.5

Charge Current (A)

2

2.5

3

0

0.2

0.4

0.6 0.8

OTG Current (A)

1

1.2

1.4

D001

f_SW= 1.5 MHz

V_BAT= 3.8 V

V_OTG= 5.15 V

图8-2. Efficiency vs. OTG Current

Inductor DCR = 18 mΩ

inductor DCR = 18 mΩ

图8-1. Charge Efficiency vs. Charge Current

6

5

4

3

2

1

0

3.85

3.8

3.75

3.7

3.65

3.6

3.55

3.5

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

0

0.2

0.4

0.6

0.8

1

Output Current (A)

1.2

1.4

1.6

D001

图8-4. SYSMIN Voltage vs. Junction Temperature

V_OTG= 5.15 V

0 A ≤I_OTG≤1.37 A

V_VBAT= 3.8 V

图8-3. OTG Output Voltage vs. Output Current

4.5

4.4

4.3

4.2

4.1

4

2.75

IINDPM = 1.8 A

IINDPM = 1.28 A

IINDPM = 0.52 A

2.5

2.25

2

1.75

1.5

1.25

1

0.75

0.5

0.25

0

V_BATREG= 4.208 V

V_BATREG= 4.352 V

V_BATREG= 4.4 V

-40

-25

-10

5

20

35

50

Junction Temperature (°C)

65

80

95

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

D001

V_VBUS= 5 V

图8-6. Input Current Limit vs. Junction Temperature

图8-5. BATREG Charge Voltage vs. Junction Temperature

Submit Document Feedback

15

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

8.7 Typical Characteristics (continued)

2.6

2

1.8

1.6

1.4

1.2

1

I_CHG= 1.8 A

I_CHG= 1.2 A

I_CHG= 0.68 A

2.4

2.2

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0.8

0.6

0.4

0.2

0

-40 -25 -10

5

20

Junction Temperature (°C)

35

50

65

80

95 110

30

40

50

60

Junction Temperature (°C)

70

80

90 100 110 120 130

D001

V_VBUS= 5 V

V_BAT= 3.8 V

V_VBUS= 5V

V_BAT= 3.8V

图8-7. Charge Current vs. Junction Temperature

图8-8. Charge Current vs. Junction Temperature Under Thermal

Regulation

486

705

R_ILIM= 265 W

R_ILIM= 374 W

R_ILIM= 910 W

R_ICHG= 372 W

700

R_ICHG= 562 W

484

482

480

478

476

474

472

R_ICHG= 1100 W

695

690

685

680

675

670

665

660

-40

-25

-10

5

Junction Temperature (°C)

20

35

50

65

80

95

-40 -25 -10

5

Junction Temperature (°C)

20

35

50

65

80

95 110

D001

V_VBUS= 5 V

V_BAT= 3.8 V

V_VBUS= 5 V

V_BAT= 3.8 V

图8-9. Input Current Limit Setting Ratio vs. Junction

图8-10. Charge Current Setting Ratio vs. Junction Temperature

Temperature

16

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9 Detailed Description

9.1 Overview

The BQ25606 is a highly integrated 3.0-A switch-mode battery charger for single cell Li-ion and Li-polymer

batteries. It includes an input reverse-blocking FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-

side switching FET (LSFET, Q3), and battery FET (BATFET, Q4), and bootstrap diode for the high-side gate

drive.

Submit Document Feedback

17

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.2 Functional Block Diagram

VBUS

PMID

V_{VVAC_PRESENT}

RBFET (Q1)

+

UVLO

SLEEP

ACOV

V_VAC

Q1 Gate

Control

œ

I_IN

V_BAT+ V_SLEEP

+

REGN

EN_REGN

EN_HIZ

V_VAC

REGN

LDO

œ

V_VAC

+

V_{VAC_OV}

œ

BTST

FBO

V_VBUS

VBUS_OVP_BOOST

+

VAC

VIN

V_{OTG_OVP}

œ

I_Q2

Q2_UCP_BOOST

Q3_OCP_BOOST

+

V_{OTG_HSZCP}

V_VBUS

œ

HSFET (Q2)

LSFET (Q3)

I_Q3

V_INDPM

SW

+

V_{OTG_BAT}

I_IN

+

I_INDPM

CONVERTER

Control

œ

REGN

BAT

+

œ

BATOVP

UCP

104% × V _{BAT_REG}

IC T_J

PGND

œ

+

I_{LSFET_UCP}

T_REG

I_Q2

BAT

Q2_OCP

œ

+

œ

+

œ

+

I_{HSFET_OCP}

I_Q3

SYS

V_{BAT_REG}

œ

V_SYSMIN

V_BTST- V_SW

I_CHG

EN_HIZ

EN_CHARGE

EN_BOOST

+

REFRESH

V_{BTST_REFRESH}

I_{CHG_REG}

œ

SYS

I_CHG

V_{BAT_REG}

I_{CHG_REG}

BATFET

(Q4)

Q4 Gate

Control

BAT

I_BADSRC

I_DC

BAD_SRC

+

REF

DAC

Converter

Control State

Machine

œ

ILIM

ICHG

VSET

IC T_J

T_SHUT

+

TSHUT

œ

BAT

BAT_GD

+

V_BATGD

Input

Source

Detection

D+

œ

USB

Adapter

DÅ

V_REG-V_RECHG

BAT

+

RECHRG

OTG

œ

I_CHG

+

TERMINATION

BATLOWV

I_TERM

œ

CHARGE

CONTROL

STATE

V_BATLOWV

STAT

/PG

+

BAT

MACHINE

œ

BQ25606

V_SHORT

+

BATSHORT

SUSPEND

BAT

œ

Battery

Sensing

Thermistor

TS

/CE

18

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.3 Feature Description

9.3.1 Device Power Up from Battery without Input Source

If only battery is present and the voltage is above depletion threshold (V_{BAT _DPL_RISE)}, the BATFET turns on and

connects battery to system. The REGN stays off to minimize the quiescent current. The low RDSON of BATFET

and the low quiescent current on BAT minimize the conduction loss and maximize the battery run time.

The device always monitors the discharge current through BATFET (Supplement Mode). When the system is

overloaded or shorted (I_BAT> I_{BATFET_OCP}), the device turns off BATFET immediately until the input source plugs

in again.

9.3.2 Power Up from Input Source

When an input source is plugged in, the device checks the input source voltage to turn on REGN LDO and all

the bias circuits. It detects and sets the input current limit before the buck converter is started. The power-up

sequence from input source is as listed:

1. Power up REGN LDO

2. Poor source qualification

3. Input source type detection is based on D+/D–to set input current limit (IINDPM) .

4. Input voltage limit threshold setting (VINDPM threshold)

5. Converter power up

9.3.2.1 Power Up REGN Regulation

The REGN LDO supplies internal bias circuits as well as the HSFET and LSFET gate drive. The REGN also

provides bias rail to TS external resistors. The pull-up rail of STAT can be connected to REGN as well. The

REGN is enabled when all the below conditions are valid:

• V_VACabove V_{VAC_PRESENT}

• V_VACabove V_BAT+ V_SLEEPZin buck mode or VBUS below V_BAT+ V_SLEEPin boost mode

• After 220-ms delay is completed

If any one of the above conditions is not valid, the device is in high impedance mode (HIZ) with REGN LDO off.

The device draws less than IVBUS_HIZ from VBUS during HIZ state. The battery powers up the system when

the device is in HIZ.

9.3.2.2 Poor Source Qualification

After REGN LDO powers up, the device confirms the current capability of the input source. The input source

must meet both of the following requirements in order to start the buck converter.

• VAC voltage below V_{VAC_OV}

• VBUS voltage above V_VBUSMINwhen pulling I_BADSRC(typical 30 mA)

If the device fails the poor source detection, it repeats poor source qualification every 2 seconds.

9.3.2.3 Input Source Type Detection

After the REGN LDO is powered, the device runs input source detection through D+/D– lines. The BQ25606

follows the USB Battery Charging Specification 1.2 (BC1.2) to detect input source (SDP/ DCP) and nonstandard

adapter through USB D+/D–lines. The BQ25606 sets input current limit through D+/D- detection and ILIM pins.

9.3.2.3.1 D+/D–Detection Sets Input Current Limit in BQ25606

The BQ25606 contains a D+/D–based input source detection to set the input current limit at VBUS plug-in. The

D+/D– detection includes standard USB BC1.2 and nonstandard adapter. When input source is plugged in, the

device starts standard USB BC1.2 detections. The USB BC1.2 is capable to identify Standard Downstream Port

(SDP) and Dedicated Charging Port (DCP). When the Data Contact Detection (DCD) timer expires, the

nonstandard adapter detection is applied to set the input current limit. The nonstandard detection is used to

distinguish vendor specific adapters (Apple and Samsung) based on their unique dividers on the D+/D– pins. If

Submit Document Feedback

19

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

an adapter is detected as DCP, the input current limit is set at 2.4 A. If an adapter is detected as unknown, the

input current limit is set at 500 mA by ILIM pin.

表9-1. Nonstandard Adapter Detection

NONSTANDARD

D+ THRESHOLD

INPUT CURRENT LIMIT (A)

D–THRESHOLD

ADAPTER

Divider 1

Divider 2

Divider 3

Divider 4

V_D+within V_{D+ _2p8}

V_D+within V_{D+ _1p2}

V_D+within V_{D+ _2p0}

V_D+within V_{D+ _2p8}

V_D–within V_{D–_2p0}

V_D–within V_{D–_1p2}

V_D–within V_{D–_2p8}

2.1

2

1

2.4

表9-2. Input Current Limit Setting from D+/D–Detection

INPUT CURRENT LIMIT (IINLIM)

D+/D–DETECTION

USB SDP (USB500)

USB DCP

500 mA

2.4 A

Divider 3

1 A

Divider 1

2.1 A

Divider 4

2.4 A

Divider 2

2 A

Unknown 5-V adapter

Set by ILIM pin

9.3.2.4 Input Voltage Limit Threshold Setting (VINDPM Threshold)

The device VINDPM is set at 4.3 V. The device supports dynamic VINDPM tracking which tracks the battery

voltage. The device VINDPM tracks battery voltage with 200 mV offset such that when VBAT + 200 mV is

greater than 4.3 V, the VINDPM value is automatically adjusted to VBAT + 200 mV.

9.3.2.5 Converter Power Up

After the input current limit is set, the converter is enabled and the HSFET and LSFET start switching. If battery

charging is disabled, BATFET turns off. Otherwise, BATFET stays on to charge the battery.

The device provides soft start when system rail is ramped up. When the system rail is below 2.2 V, the input

current is limited to is to 200 mA . After the system rises above 2.2 V, the device limits input current to the value

set by ILIM pin.

As a battery charger, the device deploys a highly efficient 1.5 MHz step-down switching regulator. The fixed

frequency oscillator keeps tight control of the switching frequency under all conditions of input voltage, battery

voltage, charge current and temperature, simplifying output filter design.

The device switches to PFM control at light load or when battery is below minimum system voltage setting or

charging is disabled.

9.3.3 Boost Mode Operation From Battery

The device supports boost converter operation to deliver power from the battery to other portable devices

through USB port. The maximum output current is up to 1.2 A. The boost operation can be enabled if the

conditions are valid:

1. BAT above V_{OTG_BAT}

2. VBUS less than BAT+V_SLEEP(in sleep mode)

3. Boost mode operation is enabled (OTG pin HIGH)

4. Voltage at TS (thermistor) pin as a percentage of V_REGNis within acceptable range (V_BHOT< V_TS< V_BCOLD

)

5. After 30-ms delay from boost mode enable

During boost mode, the VBUS output is 5.15 V and the output current can reach up to 1.2 A. The boost output is

maintained when BAT is above V_{OTG_BAT}threshold.

When OTG is enabled, the device starts up with PFM and later transits to PWM to minimize the overshoot.

20

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.3.4 Power Path Management

The device accommodates a wide range of input sources from USB, wall adapter, to car charger. The device

provides automatic power path selection to supply the system (SYS) from input source (VBUS), battery (BAT), or

both.

9.3.4.1 Narrow VDC Architecture

When the battery is below the minimum system voltage setting, the BATFET operates in linear mode (LDO

mode), and the system is typically 180 mV above the minimum system voltage setting. As the battery voltage

rises above the minimum system voltage, the BATFET is fully on and the voltage difference between the system

and battery is the V_DSof the BATFET.

When battery charging is disabled and above the minimum system voltage setting or charging is terminated, the

system is always regulated at typically 50 mV above the battery voltage.

4.5

Minimum System Voltage

Charge Disabled

Charge Enabled

4.1

4.3

3.9

3.7

3.5

3.3

3.1

2.7

2.9

3.1

3.3

3.5

BAT (V)

3.7

3.9

4.1

4.3

D002

图9-1. System Voltage vs Battery Voltage

9.3.4.2 Dynamic Power Management

To meet maximum current limit in the USB specification and avoid over loading the adapter, the device features

Dynamic Power management (DPM), which continuously monitors the input current and input voltage. When

input source is overloaded, either the current exceeds the input current limit (IINDPM) or the voltage falls below

the input voltage limit (VINDPM). The device then reduces the charge current until the input current falls below

the input current limit or the input voltage rises above the input voltage limit.

When the charge current is reduced to zero, but the input source is still overloaded, the system voltage starts to

drop. Once the system voltage falls below the battery voltage, the device automatically enters the supplement

mode where the BATFET turns on and the battery starts discharging so that the system is supported from both

the input source and battery.

9.3.4.3 Supplement Mode

When the system voltage falls below the battery voltage, the BATFET turns on and the BATFET gate is

regulated the so that the minimum BATFET V_DSstays at 30 mV when the current is low. This prevents oscillation

from entering and exiting the supplement mode.

As the discharge current increases, the BATFET gate is regulated with a higher voltage to reduce R_DSONuntil

the BATFET is in full conduction. At this point onwards, the BATFET V_DSlinearly increases with discharge

current. shows the V-I curve of the BATFET gate regulation operation. The BATFET turns off to exit supplement

mode when the battery is below battery depletion threshold.

9.3.5 Battery Charging Management

The device charges 1-cell Li-Ion battery with up to 3.0-A charge current for high capacity tablet battery. The 19.5-

mΩBATFET improves charging efficiency and minimize the voltage drop during discharging.

Submit Document Feedback

21

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.3.5.1 Autonomous Charging Cycle

With battery charging enabled (CE pin is LOW), the device autonomously completes a charging cycle. The

device default charging parameters are listed in 表9-3.

表9-3. Charging Parameter Default Setting

DEFAULT MODE

Charging voltage

Charging current

Precharge current

Termination current

Temperature profile

Safety timer

BQ25606

VSET controlled

I_CHGcontrolled

5% of ICHG

JEITA

10 hours

A new charge cycle starts when the following conditions are valid:

• Converter starts

• Battery charging is enabled (CE is low)

• No thermistor fault on TS

• No safety timer fault

The charger device automatically terminates the charging cycle when the charging current is below termination

threshold, battery voltage is above recharge threshold, and device not is in DPM mode or thermal regulation.

When a fully charged battery is discharged below recharge threshold, the device automatically starts a new

charging cycle. After the charge is done, toggle CE pin can initiate a new charging cycle.

The STAT output indicates the charging status: charging (LOW), charging complete or charge disable (HIGH) or

charging fault (blinking).

9.3.5.2 Charging Termination

The device terminates a charge cycle when the battery voltage is above recharge threshold, and the current is

below termination current. After the charging cycle is completed, the BATFET turns off. The converter keeps

running to power the system, and BATFET can turn on again to engage Supplement Mode.

9.3.5.3 Thermistor Qualification

The charger device provides a single thermistor input for battery temperature monitor.

9.3.5.4 JEITA Guideline Compliance During Charging Mode

To improve the safety of charging Li-ion batteries, JEITA guideline was released on April 20, 2007. The guideline

emphasized the importance of avoiding a high charge current and high charge voltage at certain low and high

temperature ranges.

To initiate a charge cycle, the voltage on TS pin must be within the VT1 to VT5 thresholds. If TS voltage exceeds

the T1-T5 range, the controller suspends charging and waits until the battery temperature is within the T1 to T5

range.

At cool temperature (T1-T2), the charge current is reduced to 20% of programmed fast charge current. At warm

temperature (T3-T5), the charge voltage is reduced to 4.1 V. Charge termination is disabled for cool and warm

conditions.

22

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

100

90

V_BATREG

4.1

4

80

70

60

3

2

1

0

50

40

30

20

10

0

T1

0

T2

T3

T5

T1

T2

T3

T5

5

10 15 20

25

30 35

40

45 50

55

60 65

70

œ5

5

10 15 20

25

30 35

40

45 50

55

60 65

70

œ5

0

Battery Pack Temperature (°C)

图9-3. JEITA Profile: Charging Voltage

图9-2. JEITA Profile: Charging Current

方程式1 through 方程式2 describe updates to the resistor bias network.

REGN

RT1

TS

NTC

103AT

RT2

图9-4. TS Pin Resistor Network

%

(1)

%

(2)

Select 0°C to 60°C range for Li-ion or Li-polymer battery:

• RTH_COLD= 27.28 kΩ

• RTH_HOT= 3.02 kΩ

• RT1 = 5.23 kΩ

• RT2 = 30.9 kΩ

9.3.5.5 Boost Mode Thermistor Monitor during Battery Discharge Mode

For battery protection during boost mode, the device monitors the battery temperature to be within the V_BCOLDto

V_BHOTthresholds. When temperature is outside of the temperature thresholds, the boost mode is suspended.

Submit Document Feedback

23

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

Temperature Range to Boost

Boost Disabled

100%

V

BCOLD

(œ10°C)

Boost Enabled

Boost Disabled

V

BHOT

(65°C)

0%

图9-5. TS Pin Thermistor Sense Threshold in Boost Mode

9.3.5.6 Charging Safety Timer

The device has built-in safety timer to prevent extended charging cycle due to abnormal battery conditions. The

safety timer is two hours when the battery is below V_BATLOWVthreshold and 10 hours when the battery is higher

than V_BATLOWVthreshold.

During input voltage, current, JEITA cool or thermal regulation, the safety timer counts at half clock rate as the

actual charge current is likely to be below the register setting. For example, if the charger is in input current

regulation throughout the whole charging cycle, the safety timer will expire in 20 hours.

During the fault, timer is suspended. Once the fault goes away, the timer resumes. If user stops the current

charging cycle, and start again, timer gets reset.

9.3.6 Status Outputs ( PG, STAT)

9.3.6.1 Power Good Indicator (PG Pin)

The PG pin goes LOW to indicate a good input source when:

• V_BUSabove V_{VBUS_UVLO}

• V_BUSabove battery (not in sleep)

• V_BUSbelow V_ACOVthreshold

• V_BUSabove V_POOSRC(typical 3.8 V) when I_BADSRC(typical 30 mA) current is applied (not a poor source)

• Completed 节9.3.2.3

9.3.6.2 Charging Status Indicator (STAT)

The device indicates charging state on the open drain STAT pin. The STAT pin can drive LED.

表9-4. STAT Pin State

CHARGING STATE

STAT INDICATOR

LOW

Charging in progress (including recharge)

Charging termination (top off timer may be running)

HIGH

Sleep mode, charge disable, boost mode

HIGH

Charge suspend (input overvoltage, TS fault, safety timer fault or system overvoltage)

Blinking at 1 Hz

24

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.3.7 Protections

9.3.7.1 Input Current Limit

The device's ILIM pin is to program maximum input current when D+/D- detection identifies an unknown adaptor

plugged in. The maximum input current is set by a resistor from ILIM pin to ground as:

K_ILIM

=

I

INMAX

R_ILIM

(3)

9.3.7.2 Voltage and Current Monitoring in Converter Operation

The device closely monitors the input and system voltage, as well as internal FET currents for safe buck and

boost mode operation.

9.3.7.2.1 Voltage and Current Monitoring in Buck Mode

9.3.7.2.1.1 Input Overvoltage (ACOV)

If VAC exceeds V_{VAC_OV}, HSFET stops switching immediately.

9.3.7.2.1.2 System Overvoltage Protection (SYSOVP)

The charger device clamps the system voltage during load transient so that the components connect to system

would not be damaged due to high voltage. SYSOVP threshold is 350 mV above minimum system regulation

voltage when the system is regulate at V_{SYS_MIN}. Upon SYSOVP, converter stops switching immediately to

clamp the overshoot. The charger provides 30-mA discharge current (I_SYSLOAD) to bring down the system

voltage.

9.3.7.3 Voltage and Current Monitoring in Boost Mode

The device closely monitors the VBUS voltage, as well as RBFET and LSFET current to ensure safe boost mode

operation.

9.3.7.3.1 VBUS Soft Start

When the boost function is enabled, the device soft-starts boost mode to avoid inrush current.

9.3.7.3.2 VBUS Output Protection

The device monitors boost output voltage and other conditions to provide output short circuit and overvoltage

protection. The boost build in accurate constant current regulation to allow OTG to adapt to various types of

load. If a short circuit is detected on VBUS, boost turns off and retries 7 times. If retries are not successful, OTG

is disabled.

9.3.7.3.3 Boost Mode Overvoltage Protection

When the VBUS voltage rises above regulation target and exceeds VOTG_OVP, the device stop switching.

9.3.7.4 Thermal Regulation and Thermal Shutdown

9.3.7.4.1 Thermal Protection in Buck Mode

The BQ25606 monitors the internal junction temperature T_Jto avoid overheat of the chip and limits the IC

surface temperature in buck mode. When the internal junction temperature exceeds thermal regulation limit

(110°C), the device lowers down the charge current. During thermal regulation, the actual charging current is

usually below the programmed battery charging current. Therefore, termination is disabled, the safety timer runs

at half the clock rate.

9.3.7.4.2 Thermal Protection in Boost Mode

The device monitors the internal junction temperature to provide thermal shutdown during boost mode. When IC

junction temperature exceeds T_SHUT(160°C), the boost mode is disabled and BATFET is turned off. When IC

junction temperature is below T_SHUT(160°C) - T_{SHUT_HYS}(30°C), the BATFET is enabled automatically to allow

system to restore.

Submit Document Feedback

25

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

9.3.7.5 Battery Protection

9.3.7.5.1 Battery Overvoltage Protection (BATOVP)

The battery overvoltage limit is clamped at 4% above the battery regulation voltage. When battery over voltage

occurs, the charger device immediately disables charging.

9.3.7.5.2 Battery Overdischarge Protection

When battery is discharged below V_{BAT_DPL_FALL}, the BATFET is turned off to protect battery from overdischarge.

To recover from overdischarge latch-off, an input source plug-in is required at VBUS. The battery is charged with

I_SHORT(typically 100 mA) current when the V_BAT< V_SHORT, or precharge current as set by 5% of ICHG when the

battery voltage is between V_SHORTZand V_{BAT_LOWV}

.

9.3.7.5.3 System Overcurrent Protection

When the system is shorted or significantly overloaded (I_BAT> I_BATOP) and the current exceeds BATFET

overcurrent limit, the BATFET latches off. The BATFET latch can be reset with VBUS plug-in.

10 Application and Implementation

Note

以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客户应负责确定

器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。

10.1 Application Information

A typical application consists of the device configured as a stand-alone power path management device and a

single cell battery charger for Li-Ion and Li-polymer batteries used in a wide range of Smartphone and other

portable devices. It integrates an input reverse-block FET (RBFET, Q1), high-side switching FET (HSFET, Q2),

low-side switching FET (LSFET, Q3), and battery FET (BATFET Q4) between the system and battery. The

device also integrates a bootstrap diode for the high-side gate drive.

26

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

10.2 Typical Application

System

3.5 V to 4.6 V

Input

3.9 V to 13.5 V

1 ꢀH

VBUS

PMID

SW

1 ꢀF

10 ꢀF

47 nF

BTST

REGN

GND

SYS

10 ꢀF

ACDRV

VAC

4.7 µF

SYS

2.2 kꢁ

/PG

BAT

BQ25606

STAT

OTG

10 ꢀF

Host

450 ꢁ

REGN

5.23 kꢁ

ICHG

/CE

TS

+

30.1 kꢁ 10 kꢁ

D+

D-

USB

ILIM

240 ꢁ

VSET

Float: VREG = 4.208 V

Short : VREG = 4.352 V

R_PD=10 kΩ: VREG = 4.400 V

R_PD

图10-1. BQ25606 Application Diagram

表10-1. Design Parameters

10.2.1 Design Requirements

PARAMETER

VALUE

4 V to 13.5 V

2.4 A

V_BUSvoltage range

Input current limit (D+/D–detection)

Fast charge current limit (ICHG pin)

Minimum system voltage

ICHG pin

3.5 V

Battery regulation voltage (VSET pin)

4.2 V

10.2.2 Detailed Design Procedure

10.2.2.1 Inductor Selection

The 1.5-MHz switching frequency allows the use of small inductor and capacitor values to maintain an inductor

saturation current higher than the charging current (I_CHG) plus half the ripple current (I_RIPPLE):

Submit Document Feedback

27

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

I

_SAT≥I_CHG+ (1/2) I_RIPPLE

(4)

The inductor ripple current depends on the input voltage (V_VBUS), the duty cycle (D = V_BAT/V_VBUS), the switching

frequency (f_S) and the inductance (L).

V_IN´D ´ (1- D)

=

I_RIPPLE

fs ´ L

(5)

The maximum inductor ripple current occurs when the duty cycle (D) is 0.5 or approximately 0.5. Usually

inductor ripple is designed in the range between 20% and 40% maximum charging current as a trade-off

between inductor size and efficiency for a practical design.

10.2.2.2 Input Capacitor

Design input capacitance to provide enough ripple current rating to absorb input switching ripple current. The

worst case RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not

operate at 50% duty cycle, then the worst case capacitor RMS current I_Cinoccurs where the duty cycle is closest

to 50% and can be estimated using 方程式6.

I_CIN= I_CHG´ D ´ (1- D)

(6)

Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be

placed to the drain of the high-side MOSFET and source of the low-side MOSFET as close as possible. Voltage

rating of the capacitor must be higher than normal input voltage level. A rating of 25 V or higher capacitor is

preferred for 15-V input voltage. Capacitance of 22 μF is suggested for typical of 3-A charging current.

10.2.2.3 Output Capacitor

Ensure that the output capacitance has enough ripple current rating to absorb the output switching ripple current.

方程式7 shows the output capacitor RMS current I_COUTcalculation.

I_RIPPLE

I_COUT

=

» 0.29 ´ I_RIPPLE

2 ´

3

(7)

The output capacitor voltage ripple can be calculated as follows:

æ

ç

è

ö

V_OUT

8LCfs²

V_OUT

V

DV_O=

1-

÷

^INø

(8)

At certain input and output voltage and switching frequency, the voltage ripple can be reduced by increasing the

output filter LC.

The charger device has internal loop compensation optimized for ≤20-μF ceramic output capacitance. The

preferred ceramic capacitor is 10-V rating, X7R or X5R.

28

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

10.2.3 Application Curves

V_VBUS= 5 V

V_VBAT= 3.2 V

V_VBUS= 5 V

I_CHG= 2 A

V_VBAT= 3.2 V

图10-2. Power Up with Charge Disabled

图10-3. Power Up with Charge Enabled

V_VBUS= 5 V

V_VBUS= 9 V

I_SYS= 50 mA

Charge Disabled

I_SYS= 50 mA

Charge Disabled

图10-4. PFM Switching in Buck Mode

图10-5. PFM Switching in Buck Mode

Submit Document Feedback

29

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

V_VBUS= 5 V

I_CHG= 2 A

V_VBAT= 3.8 V

V_VBUS= 12 V

I_SYS= 50 mA

Charge Disabled

图10-7. PWM Switching in Buck Mode

图10-6. PFM Switching in Buck Mode

V_VBUS= 12 V

I_CHG= 2 A

V_VBAT= 3.8 V

V_VBUS= 5 V

I_CHG= 2 A

V_VBAT= 3.2 V

图10-8. PWM Switching in Buck mode

图10-9. Charge Enable

30

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

V_VBUS= 5 V

V_VBAT= 3.2 V

V_VBAT= 4 V

I_LOAD= 50 mA

I_CHG= 2 A

PFM Enabled

图10-10. Charge Disable

图10-11. OTG Switching

V_VBUS= 5 V

I_INDPM= 1 A

V_VBAT= 4 V

I_LOAD= 1 A

I_SYSfrom 0 A to 2 A

V_BAT= 3.7 V

I_CHG= 1 A

PFM Enabled

图10-12. OTG Switching

图10-13. System Load Transient

Submit Document Feedback

31

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

V_VBUS= 5 V

I_INDPM= 2 A

I_CHG= 1 A

V_VBUS= 5 V

I_INDPM= 1 A

I_CHG= 2 A

I_SYSfrom 0 A to 4 A

V_BAT= 3.7 V

I_SYSfrom 0 A to 2 A

V_BAT= 3.7 V

图10-14. System Load Transient

图10-15. System Load Transient

V_VBUS= 5 V

I_INDPM= 1 A

I_CHG= 2 A

V_VBUS= 5 V

I_INDPM= 2 A

I_CHG= 2 A

I_SYSfrom 0 A to 4 A

V_BAT= 3.7 V

I_SYSfrom 0 A to 2 A

V_BAT= 3.7 V

图10-16. System Load Transient

图10-17. System Load Transient

32

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

V_VBUS= 5 V

I_INDPM= 2 A

I_CHG= 2 A

V_BAT= 3.8 V

C_LOAD= 470 µF

I_SYSfrom 0 A to 4 A

V_BAT= 3.7 V

图10-19. OTG Start Up

图10-18. System Load Transient

Submit Document Feedback

33

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

11 Power Supply Recommendations

In order to provide an output voltage on SYS, the BQ25606 device requires a power supply between 3.9-V and

13.5-V input with at least 100-mA current rating connected to VBUS and a single-cell Li-Ion battery with voltage

> V_BATUVLOconnected to BAT. The source current rating needs to be at least 3 A in order for the buck converter

of the charger to provide maximum output power to SYS.

34

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

12 Layout

12.1 Layout Guidelines

The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the

components to minimize high frequency current path loop (see 图 12-1) is important to prevent electrical and

magnetic field radiation and high frequency resonant problems. Follow this specific order carefully to achieve the

proper layout.

1. Place input capacitor as close as possible to PMID pin and GND pin connections and use shortest copper

trace connection or GND plane.

2. Place inductor input pin to SW pin as close as possible. Minimize the copper area of this trace to lower

electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not

use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other

trace or plane.

3. Put output capacitor near to the inductor and the device. Ground connections need to be tied to the IC

ground with a short copper trace connection or GND plane.

4. Route analog ground separately from power ground. Connect analog ground and connect power ground

separately. Connect analog ground and power ground together using thermal pad as the single ground

connection point. Or using a 0-Ωresistor to tie analog ground to power ground.

5. Use single ground connection to tie charger power ground to charger analog ground. Just beneath the

device. Use ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling.

6. Place decoupling capacitors next to the IC pins and make trace connection as short as possible.

7. It is critical that the exposed thermal pad on the backside of the device package be soldered to the PCB

ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on

the other layers.

8. Ensure that the number and sizes of vias allow enough copper for a given current path.

Refer to the BQ25601 and BQ25601D (PWR877) Evaluation Module User's Guide for the recommended

component placement with trace and via locations. For the VQFN information, refer to the Quad Flatpack No-

Lead Logic Packages Application Report and QFN and SON PCB Attachment Application Report.

12.2 Layout Example

+

œ

图12-1. High Frequency Current Path

Submit Document Feedback

35

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

图12-2. Layout Example

36

Submit Document Feedback

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

13 Device and Documentation Support

13.1 Device Support

13.1.1 第三方产品免责声明

TI 发布的与第三方产品或服务有关的信息，不能构成与此类产品或服务或保修的适用性有关的认可，不能构成此

类产品或服务单独或与任何TI 产品或服务一起的表示或认可。

13.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

13.3 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

13.4 Trademarks

TI E2E^™is a trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

13.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

13.6 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

Submit Document Feedback

37

Product Folder Links: BQ25606

BQ25606

www.ti.com.cn

ZHCSGR3C –MAY 2017 –REVISED SEPTEMBER 2021

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

38

Submit Document Feedback

Product Folder Links: BQ25606

重要声明和免责声明

TI 提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，不保证没

有瑕疵且不做出任何明示或暗示的担保，包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担保。

这些资源可供使用TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任：(1) 针对您的应用选择合适的TI 产品，(2) 设计、验

证并测试您的应用，(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。这些资源如有变更，恕不另行通知。TI 授权您仅可

将这些资源用于研发本资源所述的TI 产品的应用。严禁对这些资源进行其他复制或展示。您无权使用任何其他TI 知识产权或任何第三方知

识产权。您应全额赔偿因在这些资源的使用中对TI 及其代表造成的任何索赔、损害、成本、损失和债务，TI 对此概不负责。

TI 提供的产品受TI 的销售条款(https:www.ti.com/legal/termsofsale.html) 或ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI

提供这些资源并不会扩展或以其他方式更改TI 针对TI 产品发布的适用的担保或担保免责声明。重要声明

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

GENERIC PACKAGE VIEW

RGE 24

VQFN - 1 mm max height

PLASTIC QUAD FLATPACK - NO LEAD

Images above are just a representation of the package family, actual package may vary.

Refer to the product data sheet for package details.

4204104/H

PACKAGE OUTLINE

VQFN - 1 mm max height

RGE0024H

PLASTIC QUAD FLATPACK- NO LEAD

A

4.1

3.9

B

4.1

3.9

PIN 1 INDEX AREA

1 MAX

C

SEATING PLANE

0.08 C

0.05

0.00

ꢀꢀꢀꢀꢁꢂꢃꢄꢂꢅ

(0.2) TYP

2X 2.5

12

7

20X 0.5

6

13

25

2X

SYMM

2.5

1

18

0.30

PIN 1 ID

(OPTIONAL)

24X

0.18

24

19

0.1

0.05

C A B

C

SYMM

0.48

0.28

24X

4219016 / A 08/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

www.ti.com

EXAMPLE BOARD LAYOUT

VQFN - 1 mm max height

RGE0024H

PLASTIC QUAD FLATPACK- NO LEAD

(3.825)

2.7)

(

24

19

24X (0.58)

24X (0.24)

1

18

20X (0.5)

25

SYMM

(3.825)

2X

(1.1)

ꢆꢄꢂꢁꢇꢀ9,$

TYP

6

13

(R0.05)

7

12

2X(1.1)

SYMM

LAND PATTERN EXAMPLE

SCALE: 20X

0.07 MIN

ALL AROUND

0.07 MAX

ALL AROUND

METAL

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4219016 / A 08/2017

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments

literature number SLUA271 (www.ti.com/lit/slua271).

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

VQFN - 1 mm max height

RGE0024H

PLASTIC QUAD FLATPACK- NO LEAD

(3.825)

4X ( 1.188)

24

19

24X (0.58)

24X (0.24)

1

18

20X (0.5)

SYMM

(3.825)

(0.694)

TYP

6

13

25

(R0.05) TYP

METAL

TYP

7

12

(0.694)

TYP

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD

78% PRINTED COVERAGE BY AREA

SCALE: 20X

4219016 / A 08/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations..

www.ti.com

重要声明和免责声明

TI“按原样”提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，

不保证没有瑕疵且不做出任何明示或暗示的担保，包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担

保。

这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任：(1) 针对您的应用选择合适的 TI 产品，(2) 设计、验

证并测试您的应用，(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。

这些资源如有变更，恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。

您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成

本、损失和债务，TI 对此概不负责。

TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改

TI 针对 TI 产品发布的适用的担保或担保免责声明。

TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	BQ25606RGET
厂家：	TEXAS INSTRUMENTS
描述：	具有高输入电压和电源路径的独立型单节 3A 快速充电器 \| RGE \| 24 \| -40 to 85
文件：	总48页 (文件大小：3810K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BQ25606RGET [TI]

相关型号：

BQ25611D

BQ25611DRTWR

BQ25611DRTWT

BQ25616

BQ25616JRTWR

BQ25616JRTWT

BQ25616RTWR

BQ25616RTWT

BQ25618

BQ25618E

BQ25618EYFFR

BQ25618YFFR