LM74610-Q1 [TI]

0.48V 至 42V、零 IQ 汽车理想二极管控制器;


型号：	LM74610-Q1
厂家：	TEXAS INSTRUMENTS
描述：	0.48V 至 42V、零 IQ 汽车理想二极管控制器控制器二极管
文件：	总31页 (文件大小：1628K)
中文：	中文翻译
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LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

LM74610-Q1 零 IQ 反极性保护智能二极管控制器

1 特性

2 应用

•

符合汽车应用要求

具有符合 AEC-Q100 的下列结果：

•

高级驾驶员辅助系统 (ADAS)

信息娱乐系统

电动工具（工业）

传输控制单元 (TCU)

电池 OR-ing 应用

–

超出人体模型 (HBM) 静电放电 (ESD) 分类等级

–

器件充电器件模型 (CDM) ESD 分类等级 C4B

•

最低反向电压：45V

3 说明

正极引脚无正电压限制

LM74610-Q1 是一款控制器器件，可与 N 沟道

MOSFET 一同用于反极性保护电路。其设计用于驱动

外部 MOSFET，串联电源时可模拟理想二极管整流

器。该机制的独特优势在于不以接地为参考，因此 Iq

为零。

适用于外部 N 沟道金属氧化物半导体场效应晶体管

(MOSFET) 的电荷泵栅极驱动器

•

功耗比肖特基二极管/PFET 解决方案更低

低反极性泄漏电流

零 IQ

2µs 内快速响应反极性情况

-40°C 至 125°C 工作环境温度

可用于 OR-ing 应用

LM74610-Q1 控制器为外部 N 沟道 MOSFET 提供栅

极驱动，并配有快速响应内部比较器，可使 MOSFET

栅极在反极性情况下放电。这种快速降压特性有效限

制了检测到反极性时反向电流的大小和持续时间。此

外，该器件设计选用了合适的 TVS 二极管，符合

CISPR25 5 类 EMI 规范和汽车类 ISO7637 瞬态要

求。

符合 CISPR25 EMI 规范

选用了合适的瞬态电压抑制器 (TVS) 二极管，满足

汽车类 ISO7637 瞬态要求

器件信息⁽¹⁾

部件号

封装

封装尺寸（标称值）

LM74610-Q1

VSSOP (8)

3.0mm x 5.0mm

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

智能二极管配置

VIN

VOUT

Gate Drive

Gate Pull Down

Anode

Cathode

LM74610-Q1

V_CAPH

V_CAPL

Vcap

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SNOSCZ1

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

7.3 Feature Description .................................................. 7

7.4 Device Functional Modes........................................ 10

Application and Implementation ........................ 12

8.1 Application Information............................................ 12

8.2 Typical Application ................................................. 12

Power Supply Recommendations...................... 20

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 4

6.6 Typical Characteristics.............................................. 6

Detailed Description .............................................. 7

7.1 Overview ................................................................... 7

7.2 Functional Block Diagram ......................................... 7

10 Layout................................................................... 21

10.1 Layout Guidelines ................................................. 21

10.2 Layout Example .................................................... 22

11 器件和文档支持 ..................................................... 23

11.1 社区资源................................................................ 23

11.2 商标....................................................................... 23

11.3 静电放电警告......................................................... 23

11.4 Glossary................................................................ 23

12 机械封装和可订购信息 .......................................... 23

4 修订历史记录

Changes from Original (July 2015) to Revision A

Page

•

从产品预览改为量产数据 ........................................................................................................................................................ 1

LM74610-Q1

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ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

5 Pin Configuration and Functions

DGK Package

8-Pin VSSOP

Top View

V_CAPL

Cathode

Gate Pull Down

V_CAPH

LM74610-Q1

Gate Drive

Anode

Pin Functions

PIN NO.

NAME

DESCRIPTION

VcapL

Charge Pump Output, connect to an external charge pump capacitor

Connect to the gate of the external MOSFET for fast turn OFF in the case of reverse polarity

No connect. Leave floating or connect to Anode pin

Gate Pull Down

Anode

Anode of the diode, connect to source of the external MOSFET

No connect. Leave floating or connect to gate drive pin

Gate Drive

VcapH

Gate Drive output, Connect to the Gate of the external MOSFET

Charge Pump Output, connect to an external charge pump capacitor

Cathode of the diode, connect to Drain of the external MOSFET

Cathode

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

-3

MAX

UNIT

(2) (3)

Cathode to Anode (For a 2ms time duration)

Cathode to Anode (Continuous)⁽³⁾

VcapH to VcapL

-3

-0.3

-40

-65

Anode to VcapL

Gate Drive, Gate Pull Down to VcapL

(4)

Ambient Temperature (TA-MAX)

125

150

°C

Case Temperature (TC-MAX)

Storage temperature range, T_stg

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) 42V continuous (and 45V transients for 2ms) absmax condition from Cathode to Anode. Suitable to use with TVS SMBJ28A and

SMBJ14A at the anode.

(3) Reverse voltage rating only. There is no positive voltage limitation for the LM74610-Q1 Anode terminal.

(4) The device performance is ensured over this Ambient Temperature range as long the Case Temperature does not exceed the MAX

value.

6.2 ESD Ratings

VALUE

±4000

±750

UNIT

Human body model (HBM), per AEC Q100-002⁽²⁾

Charged-device model (CDM), per AEC Q100-011

V_(ESD)

Electrostatic discharge⁽¹⁾

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

(2) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Cathode To Anode

Ambient Temperature (TA-MAX)

Case Temperature (TC-MAX)

-40

125

°C

6.4 Thermal Information

LM74610-Q1

VSSOP 8 PINS

THERMAL METRIC⁽¹⁾

UNIT

R_θJA

R_θJC(top)

R_θJB

ψ_JT

Junction-to-ambient thermal resistance

181

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

102

°C/W

Junction-to-top characterization parameter

Junction-to-board characterization parameter

ψ_JB

100

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_A= 25°C unless otherwise noted. Minimum and Maximum limits are specified through test, design, validation or statistical

correlation. Typical values represent the most likely parametric norm at T_A= 25°C and are provided for reference purpose

only. V_{Anode-Cathode}= 0.55V for all tests.⁽¹⁾

(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which

operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits

and associated test conditions, see the table of Electrical Characteristics.

LM74610-Q1

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ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

Electrical Characteristics (continued)

T_A= 25°C unless otherwise noted. Minimum and Maximum limits are specified through test, design, validation or statistical

correlation. Typical values represent the most likely parametric norm at T_A= 25°C and are provided for reference purpose

only. V_{Anode-Cathode}= 0.55V for all tests.⁽¹⁾

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V_{Anode to Cathode}

V_{cap Threshold}

Minimum Startup Voltage across External MOSFET V_GS= 0V

External MOSFET's Body Diode

0.48

Charge Pump Capacitor Drive

Thresholds

Vcap Upper Threshold

Vcap Lower Threshold

V_{Gate to Anode}= 2V

6.3

5.15

9.4

I_{Gate up}

Gate Drive Pull up current

8.9

µA

I_{Gate down}

Gate Drive pull down current

during forward voltage

V_{Gate to Anode}= 4V

6.35

6.8

I_{Gate pull down}

I_{Charge Current}

I_{Discharge Current}

Gate drive pull down current

when reverse voltage is sensed

V_{Gate Pull Down}= V_Anode+ 2V

V_{Anode to Cathode}= 0.55 V

V_cap= 6.6V

160

µA

Charging current for the charge

pump capacitor

VCAP Current Consumption to

power the controller when

MOSFET is ON

0.95

T_Recovery

Time to shut off MOSFET when

V_{Anode to Cathode}= -20 mV

2.2

5⁽²⁾

µs

voltage is reversed (Equivalent to Cgate = 4 nF

diode reverse recovery time)

Duty Cycle

Iload = 3 A, T_A= 25°C

98%

92%

Iload = 3 A, T_A= 125°C

V_{Anode to Cathode}= -13.5 V

I_LKG

Reverse Leakage Current

Quiescent Current to GND

Current into Anode pin

110⁽²⁾

µA

I_Anode

Current into Anode pin when V_{Anode -}

_Cathode= 0.3V.

(2) Limit applies over the full Operating Temperature Range T_A= -40°C to +125°C.

30 mV

V_ANODE> V_CATHODE

V_CATHODE> V_ANODE

0 mV

-20 mV

tT_RECOVERY

V_GATE

0 V

Figure 1. Gate Shut Down Timing in the Event of Reverse Polarity

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

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6.6 Typical Characteristics

300

0.465

0.46

V_Reverse = 13.5 V

V_Reverse = 37 V

250

200

150

100

0.455

0.45

0.445

0.44

0.435

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

D001

D002

Figure 2. Reverse Leakage at Negative Voltages

Figure 3. Anode to Cathode Startup Voltage

3.25

6.5

6.25

VCAP H

VCAP L

2.75

2.5

2.25

5.75

5.5

5.25

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (°C)

Temperature (èC)

D009

D003

Figure 4. Reverse Recovery Time (T_Recovery

)

Figure 5. VcapH and VcapL Voltage Threshold

100

-40èC

25èC

85èC

125èC

-40èC

25èC

85èC

125èC

-20

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Current (A)

D005

D004

Figure 6. Duty Cycle of the Output Voltage at Startup

Figure 7. Duty Cycle of the Output Voltage

LM74610-Q1

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ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

7 Detailed Description

7.1 Overview

Most systems in automotive or industrial applications require fast response reverse polarity protection at the input

stage. Schottky diodes or PFETs are typically used in most power systems to protect the load in case of negative

polarity. The disadvantage of using diodes is high voltage drop during forward conduction, which reduces the

available voltage and increases the associated power losses. PFET solutions are inefficient for high load current

and low input voltage. These situations often occur during start-stop or cold crank. The other disadvantages of

PFET include higher Iq and higher system cost. Using an N-Channel MOSFET with a controller IC can be a

highly effective and more efficient substitute in reverse polarity protection circuitry. The ON state forward voltage

loss in a MOSFET depends upon the R_DSONof the MOSFET. The power losses become substantially lower than

the Schottky diode for the equivalent current. This solution has a small increase in complexity; however it

eliminates the need for diode heatsinks or a large thermal copper area in PCB layout for high power applications,

that a diode would need.

The LM74610-Q1 is a zero Iq controller that is combined with an external N-channel MOSFET to replace a diode

or PFET reverse polarity solution in power systems. The voltage across the MOSFET source and drain is

constantly monitored by the LM74610-Q1 Anode and Cathode pins. An internal charge pump is used to provide

the GATE drive for the external MOSFET. The forward conduction is through the MOSFET 98% of the time. The

forward conduction is through the MOSFET body diode for 2% of time when energy is stored in an external

charge pump capacitor Vcap Figure 9. This stored energy is used to drive the gate of MOSFET. The voltage

drop depends on the R_DSONof a particular MOSFET in use, which is significantly smaller than a PFET. The

LM74610-Q1 has no ground reference which makes it identical to a diode.

7.2 Functional Block Diagram

Input

Output

ANODE

GATE DRIVE GATE PULL DOWN

CATHODE

V_CAP

LOGIC

Reverse Batt

Shut Off

V_CAP

Charge

Pump

7.3 Feature Description

7.3.1 During T0

When power is initially applied, the load current (I_D) will flow through the body diode of the MOSFET and produce

a voltage drop (V_f) during T0 in Figure 8. This forward voltage drop (V_f) across the body diode of the MOSFET is

used to charge up the charge pump capacitor Vcap. During this time, the charge pump capacitor Vcap is

charged to a higher threshold of 6.3V (typical).

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

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Feature Description (continued)

VOUT

Body Diode Voltage Drop

tT1t

FET is ON

V_GS

FET is OFF

0 V

Figure 8. Output Voltage and V_GSOperation at 1A Output Current

7.3.2 During T1

Once the voltage on the capacitor reaches a higher voltage level of 6.3V (typical), the charge pump is disabled

and the MOSFET turns ON. The energy stored in the capacitor is used to provide the gate drive for the MOSFET

(T1 in Figure 8). When the MOSFET is ON, it provides a low resistive path for the drain current to flow and

minimizes the power dissipation associated with forward conduction. The power losses during the MOSFET ON

state depend primarily on the R_DSONof the selected MOSFET and load current. At time when the capacitor

voltage reaches its lower threshold VcapL 5.15V (typical), the MOSFET gate turns OFF. The drain current I_Dwill

then begin to flow through the body diode of the MOSFET, causing the MOSFET body diode voltage drop to

appear across Anode and Cathode pins. The charge pump circuitry is re-activated and begins charging the Vcap.

The LM74610-Q1 operation keeps the MOSFET ON at approximately 98% duty cycle (typical) regardless of the

external charge pump capacitor value. This is the key factor to minimizing the power losses. The forward voltage

drop during this time is limited by the R_DSONof the MOSFET.

7.3.3 Pin Operation

7.3.3.1 Anode and Cathode Pins

The LM74610-Q1 Anode and Cathode pins are connected to the source and drain of the external MOSFET. The

current into the Anode pin is 30 µA (typical). When power is initially applied, the load current flows through the

body diode of the external MOSFET, the voltage across Anode and Cathode pins is equal to the forward diode

drop (V_f). The minimum value of V_frequired to enable the charge pump circuitry is 0.48V. Once the MOSFET is

turned ON, the Anode and Cathode pins constantly sense the voltage difference across the MOSFET to

determine the magnitude and polarity of the voltage across it. When the MOSFET is on, the voltage difference

across Anode and Cathode pins depends on the R_DSONand load current. If voltage difference across source and

drain of the external MOSFET becomes negative, this is sensed as a fault condition by Anode and Cathode pins

and gate is turned off by Gate Pull Down pin as shown in Figure 1. The reverse voltage threshold across Anode

and Cathode to detect the fault condition is -20 mV. The consistent sensing of voltage polarity across the

MOSFET enables the LM74610-Q1 to provide a fast response to the power source failure and limit the amount

and duration of the reverse current flow.

7.3.3.2 VcapH and VcapL Pins

VcapH and VcapL are high and low voltage thresholds respectively that the LM74610-Q1 uses to detect when to

turn the charge pump circuitry ON and OFF. The capacitor charging and discharging time can be correlated to

the duty cycle of the MOSFET gate. Figure 9 shows the voltage behavior across the Vcap. During the time

period T0, the capacitor is storing energy from the charge pump. The MOSFET is turned off and current flow is

only through the body diode during this time period. The conduction though body diode of the MOSFET is for a

LM74610-Q1

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ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

Feature Description (continued)

very small period of time (2% typical) which rules out the chances of overheating the MOSFET, regardless of the

output current. Once the capacitor voltage reaches its high threshold, the MOSFET is turned off and charge

pump circuity is deactivated until the Vcap reaches its low voltage threshold (T1). The voltage difference between

Vcap high and low threshold is typically 1.15V. The LM74610-Q1 charge pump has 46µA charging capability with

5-8MHz frequency.

V_CAP

1.1 V

V_CAP

VOUT

Body Diode Voltage Drop

tT1t

Figure 9. Vcap Charging and Discarding by the Charge Pump

The Vcap current consumption is 1 µA (typical) to drive the gate. The MOSFET OFF time (T0) and ON time (T1)

can be calculated using the following expression

DT = C

(1)

Where:

•

C = Vcap Capacitance

dV = 1.15V

dI = 46 µA for charging

dI = 0.95 µA for discharging

Note: Temperature dependence of these parameters – The duty cycle is dependent on temperature since the

capacitance variation over temperature has a direct correlation to the MOSFET OFF and ON periods and the

frequency. If the capacitor varies 20% the periods and the frequency will also vary by 20% so it is recommended

to use a quality X7R/COG cap and not to place the cap in close proximity to high temperature devices. The

variation of the capacitor does not have a thermal impact in the application as the duty cycle does not change.

7.3.3.3 Gate Drive Pin

When the charge pump capacitor is charged to the high voltage level of 6.3V (typ), the Gate Drive pin provides a

6.8µA (typ) of drive current. When the charge pump capacitor reaches its lower voltage threshold of 5.15V (typ),

Gate is pulled down to the Anode voltage (Vin). When Anode voltage goes negative, the Gate voltage is pulled

down to Anode voltage with 160mA pull down current.

7.3.3.4 Gate Pull Down Pin

The Gate Pull Down pin is connected to the Gate Drive pin in a typical application circuit. When the controller

detects negative polarity, possibly due to failure of the input supply or voltage ripple, the Pull-Down quickly

discharges the MOSFET gate through a discharge transistor. This fast pull down react/s regardless of the Vcap

charge level. If the input supply abruptly fails, as would happen if the supply gets shorted to ground, a reverse

current will temporarily flow through the MOSFET. This reverse current can be due to parallel connected supplies

and load capacitance and is dependent upon the R_DSONof the MOSFET. When the negative voltage across the

Anode and Cathode pins due to reverse current reaches -20mV (typical), the LM74610-Q1 immediately reacts

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

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Feature Description (continued)

and discharges the MOSFET gate capacitance as shown in Figure 10 . A MOSFET with 5nF of effective gate

capacitance can be turned off by the LM74610-Q1 within 2µs (typical). The fast turnoff time minimizes the

reverse current flow from MOSFET drain by opening the circuit. The reverse leakage current does not exceed

110µA for a constant 13.5V reverse voltage across Anode and Cathode pins. The reverse leakage current for a

Schottky diode is 15mA under the same voltage and temperature conditions.

Figure 10. Gate Pull Down in the Event of Reverse Polarity

7.4 Device Functional Modes

The LM74610-Q1 operates in two modes:

•

Body Diode Conduction Mode

The LM74610-Q1 solution works like a conventional diode during this time with higher forward voltage drop.

The power dissipation during this time can be given as:

P_Dissipation= V

ì I

(

_ForwardDrop

) (

_{Drain Current}

)

(2)

However, the current only flows through the body diode while the MOSFET gate is being charged to V_GS(TH)

This conduction is only for 2% duty cycle, therefore it does not cause any thermal issues.

Cì(VcapH- VcapL)

Body Diode ON Time =

I_{Charge Current}

(3)

•

The MOSFET Conduction Mode

The MOSFET is turned on during this time and current flow is only through the MOSFET. The forward voltage

drop and power losses are limited by the R_DSONof the specific MOSFET used in the solution. The LM74610-

Q1 solution output is comprised of the MOSFET conduction mode for 98% of its duty cycle. This time period

is given by the following expression:

Cì(VcapH - VcapL)

MOSFET ON Time =

I_{Discharge Current}

(4)

7.4.1 Duty Cycle Calculation

The LM74610-Q1 has an operating duty cycle of 98% at 25 C̊ and >90% at 125 C̊ . The duty cycle doesn’t

depend on the Vcap capacitance value. However, the variation in capacitance value over temperature has direct

correlation to the switching frequency between the MOSFET and body diode. If the capacitance value decreases,

the charging and discharging time will also decrease, causing more frequent switching between body diode and

the MOSFET condition. The following expression can be used to calculate the duty cycle of the LM74610-Q1:

LM74610-Q1

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ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

Device Functional Modes (continued)

(MOSFET ON Time)

(MOSFET ON Time + Body Diode ON Time)

Duty Cycle (%) =

ì100

(5)

LM74610-Q1

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8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM74610-Q1 is used with N-Channel MOSFET controller in a typical reverse polarity protection application.

This device is connected to the N-Channel MOSFET as shown in Figure 11 . The schematic for the typical

application is shown in Figure 12 where the LM74610-Q1 is used in series with a battery to drive the MOSFET

Q1. The TVS+ and TVS- are not required for the LM74610-Q1. However, they are typically used to clamp the

positive and negative voltage surges respectively. The output capacitor Cout is recommended to protect the

immediate output voltage collapse as a result of line disturbance.

8.2 Typical Application

Anode

Cathode

Voltage

Vout

Regulator

TVS+

TVS-

Cout

Vbatt

LM74610-Q1

Vcap

Figure 11. Typical System Application

ANODE

CATHODE

2.2 µF

VCAP

TVS+

TVS-

Cout

VCAPL

CATHODE

Vout

Voltage Regulator

VBatt

GATE PULL DOWN

VCAPH

Cin

100 pf

GATE DRIVE

ANODE

LM74610QDGKRQ1

GND

Figure 12. Typical Application Schematic

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Typical Application (continued)

8.2.1 Design Requirements

For this design example, use the parameters listed in Table 1 as the input parameters

Table 1. Design Parameters

DESIGN PARAMETER

Input voltage range

EXAMPLE VALUE

Max V_DSof the MOSFET

-45V

Output Voltage

Maximum Negative Voltage

Output Current Range

Maximum drain current

ΔV_o= ± 5%

Transient Response, 3A Load Step

8.2.2 Detailed Design Procedure

To begin the design process, determine the following:

8.2.2.1 Design Considerations

•

Input voltage range

Output current range

Body Diode forward voltage drop for the selected MOSFET

MOSFET Gate threshold voltage

8.2.2.2 Startup Voltage

The LM74610-Q1 will not initiate the charge pump operation if a closed loop system is in standby mode or the

drain current is smaller than 1mA (typical). This is due to a minimum body diode voltage requirement of the

LM74610-Q1 controller. If the drain current is too small to produce a minimum voltage drop of 0.48V at 25 ͦC, the

charge pump circuitry will remain off and the MOSFET will act just like a diode. It is very important to know the

body diode voltage parameter of a MOSFET before implementing it into the Smart Diode solution. Some N-

channels MOSFETs have very low body diode voltage at higher temperature. This makes their drain current

requirement higher to achieve 0.48V across the body diode in order to initiate the LM74610-Q1 controller at

higher temperatures.

8.2.2.3 Capacitor Selection

A ceramic capacitor should be placed between VcapL and VcapH. The capacitor acts as a holding tank to power

up the control circuitry when the MOSFET is on.

When the MOSFET is off, this capacitor is charged up to higher voltage threshold of ~6.3V. Once this voltage is

reached, the Gate Drive of LM74610-Q1 will provide drive for the external MOSFET. When the MOSFET is ON,

the voltage across its body diode is collapsed because the forward conduction is through the MOSFET. During

this time, the capacitor acts as a supply for the Gate Drive to keep the MOSFET ON.

The capacitor voltage will gradually decay when the MOSFET is ON. Once the capacitor voltage reaches a lower

voltage threshold of 5.15V, the MOSFET is turned off and the capacitor gets recharged again for the next cycle.

A capacitor value of 220nF to 4.7uF with X7R/COG characteristic and 16V rating or higher is recommended for

this application. A higher value capacitor sets longer MOSFET ON time and OFF time; however, the duty cycle

remains at ~98% for MOSFET ON time irrespective of capacitor value.

If the Vcap value is 2.2µF, the MOSFET ON time and OFF time can be calculated using Equation 1 :

MOSFET ON Time = (2.2µF x 1.15V)/0.95µA = 2.66 seconds

Body Diode ON Time = (2.2µF x 1.15V)/46µA = 55 miliseconds

(6)

(7)

The duty cycle can be calculated using Equation 5 :

Duty Cycle % = 2.66sec / (2.66sec + 0.055sec) = 98%

(8)

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

8.2.2.4 MOSFET Selection

The important MOSFET electrical parameters are the maximum continuous Drain current I_D, the maximum drain-

to-source voltage V_DS(MAX), the gate-to-source threshold voltage V_GS(TH)and the drain-to-source On resistance

R_DSON. The maximum continuous drain current, I_D, rating must exceed the maximum continuous load current.

The rating for the maximum current through the body diode, I_S, is typically rated the same as, or slightly higher

than the drain current, but body diode current only flows for a small period while the MOSFET gate is being

charged to V_GS(TH).The LM74610-Q1 can provide up to 5V V_GSto drive the external MOSFET, therefore the V_GS

threshold of the selected MOSFET must be ≤ 3V.

The voltage across the MOSFET's body diode must be higher than 0.48V at low current. The body diode voltage

for MOFETS typically decreases as the ambient temperature increases. This will increase the source current

requirement to achieve the minimum body diode drain-to-source voltage for the charge pump to initiate. The

maximum drain-to-source voltage, V_DS(MAX), must be high enough to withstand the highest differential voltage

seen in the application. This would include any anticipated fault conditions. Although there are no positive V_DS

limitation. However, it is recommended to use MOSFETS with voltage rating up to 45V for automotive

applications, since the LM74610-Q1 has a reverse voltage limit of -45V. Table 2 shows the examples of

recommended MOSFETs to be used with the LM74610-Q1.

8.2.3 Application Curves

V_IN(5 V/DIV)

V_OUT(5 V/DIV)

V_IN(5 V/DIV)

V_OUT(5 V/DIV)

Gate Drive (5 V/DIV)

Time (50 ms/DIV)

Figure 14. Shutdown Relative to VIN

Figure 13. Startup Relative to VIN

V_IN(10 V/DIV, 12 V to -20 V)

V_IN(10 V/DIV, 12 V to -20 V, 60 Hz)

V_OUT(10 V/DIV, 12 V to 0 V)

Gate Drive (10 V/DIV)

V_OUT(10 V/DIV, 12 V to 0 V)

Gate Drive (10 V/DIV)

Time (100 µs/DIV)

Time (10 ms/DIV)

Figure 15. Response to Revere polarity

Figure 16. Response to a 60Hz AC Input

LM74610-Q1

www.ti.com.cn

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

V_IN(10 V/DIV, 12 V to -20 V)

TVS Clamping at -20 V

V_OUT(5 V/DIV)

0 V

Figure 17. ISO Pulse 1 Test Setup

Time (1 ms/DIV)

Figure 18. Response to ISO 1 Pulse

8.2.4 Selection of TVS Diodes in Automotive Reverse Polarity Applications

TVS diodes can be used in automotive systems for protection against transients. There are 2 types of TVS

diode, one that offers bi-directional clamping and one that is uni-directional. In the application circuit show in

Figure 11, 2 unidirectional TVS diodes are used. TVS + does the clamping for positive pulses as seen in load

dump and TVS- does the clamping for negative pulses such as seen in the ISO specs.

There are two important specs to be aware of: breakdown voltage and clamping voltage. Breakdown voltage is

the voltage at which the TVS diode goes into avalanche similar to a zener diode and is specified at a low current

value typ 1mA. Clamping voltage is the voltage the TVS diode clamps to in high current pulse situations.

In the case of an ISO 7637-2 pulse 1, the voltages go to -150V with a generator impedance of 10Ω. This

translates to 15A flowing through the TVS - and the voltage across the TVS would be close to its clamping

voltage. A rule of thumb with TVS diode voltage selection is that the breakdown voltage should be higher than

worst case steady state voltages seen in the system. TVS diodes are meant to clamp pulses and not meant for

steady state voltages.

The value of the TVS + is selected such that the breakdown voltage of the TVS is higher than 24V which is a

commonly used battery for jump start. LM74610-Q1 does not have a positive voltage limit so the selection of the

voltage rating of TVS + is determined by the max voltage tolerated by the downstream electronics. If the

downstream parts can withstand at least 37V (suppressed load dump) then there is no need to use the TVS+. In

this case it can be replaced with a diode as seen in Figure 19. A 1A diode with a 30A surge current rating and at

least 40V reverse voltage rating is recommended. In case positive clamping voltage is desired then

SMBJ24A/SMBJ26A is recommended for TVS + as seen in Figure 11.

Anode

Cathode

Voltage

Vout

Regulator

TVS-

Cout

Vbatt

LM74610-Q1

Vcap

Diode

Figure 19. Typical Application without Positive Voltage Clamping

The value of the TVS – is selected such that 2 criteria are met. The breakdown voltage of the TVS should be

higher than the max reverse battery voltage which is typically 15V. The second criterion is that the abs max

rating for reverse voltage of the LM74610 is not exceeded (-45V).

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

In case of reverse voltage pulses such as in ISO specs, the LM74610 turns the MOSFET off. When the MOSFET

turns off the voltage seen by the LM74610, Anode to Cathode is - (clamping voltage of TVS- (plus) the output

capacitor voltage). If the max voltage on output capacitors is 16V, then the clamping voltage of the TVS- should

not exceed, 45V – 16V = 29V.

SMBJ14A/SMBJ15A/SMBJ16A TVS diodes can be used for TVS-. The breakdown voltage of SMBJ14A is 15.6V

and SMBJ16A is 17.8V. This meets criteria one. The clamping voltage of SMBJ14A is 23.2V and SMBJ16A is

26V. This meets the second criteria.

Bi-directional TVS diodes are not recommended due to their symmetrical clamping specs. SMBJ24CA has a

breakdown voltage of 26.7V and a clamping voltage of 38.9V. The breakdown voltage meets the criteria for being

higher than 24V. However the clamping voltage is 38.9V. The high clamping voltage is not an issue for the

positive pulses however for a negative ISO pulse, the abs max of the LM74610 can be violated. Voltage across

Anode to Cathode in this case is –(38.9V + 16V) = -54.9V which violates abs max rating of -45V.

As far as power levels for TVS diodes the ‘B’ in the SMBJ stands for 600W peak power levels. This is sufficient

for ISO 7637-2 pulses and suppressed load dump case (ISO-16750-2 pulse B). For unsuppressed load dumps

(ISO-16750-2 pulse A) higher power TVS diodes such as SMCJ or SMDJ may be required.

8.2.5 OR-ing Application Configuration

Basic redundant power architecture comprises of two or more voltage or power supply sources driving a single

load. In its simplest form, the OR-ing solution for redundant power supplies consists of Schottky OR-ing diodes

that protect the system against an input power supply fault condition. A diode OR-ing device provides effective

and low cost solution with few components. However, the diodes forward voltage drops affects the efficiency of

the system permanently, since each diode in an OR-ing application spends most of its time in forward conduction

mode. These power losses increase the requirements for thermal management and allocated board space.

The LM74610-Q1 ICs combined with external N-Channel MOSFETs can be used to in OR-ing Solution as shown

in Figure 20 . The source to drain voltage V_DSfor each MOSFET is monitors by the Anode and Cathode pins of

the LM74610-Q1. The forward conduction is through MOSFETs 98% of the time which avoids the diode forward

voltage drop. The body diode of each MOSFET only conducts the remaining 2% of the time to allow the charge

pump capacitor to be fully charged.

This is essential for an OR-ing device to fast detect the reverse current and instantly pull-down the MOSFET

gate to block the reverse current flow. An effective OR-ing solution needs to be extremely fast to limit the reverse

current amount and duration. The LM74610-Q1 devices in OR-ing configuration constantly sense the voltage

difference between Anode and Cathode pins, which are the voltage levels at the power sources (PS1, PS2) and

the common load point respectively. When either of the power sources operates at lower voltage, the LM74610-

Q1 detects a negative polarity and shuts down the Gate Drive through a fast Pull-Down within 2μsec (typical).

LM74610-Q1

www.ti.com.cn

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

PS1

Anode

Gate Drive

Pull Down

Cathode

LM74610-Q1

C_LOAD

R_LOAD

V_CAPH

V_CAP

Vcap

PS2

Anode

Gate Drive

Pull Down

Cathode

LM74610-Q1

V_CAPH

V_CAPL

Vcap

Figure 20. Typical OR-ing Application

If one of the power supplies fails in LM74610-Q1 OR-ing controller application, the output remains uninterrupted.

This behavior is similar to diode OR-ing. Figure 21

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

V_OUT(5 V/DIV, 12 V)

V_IN1 (5 V/DIV, 12 V)

V_IN2 (5 V/DIV, 12 V to 0 V)

Time (1 s/DIV)

Figure 21. LM74610-Q1 OR-ing waveform

8.2.6 Design Requirements

NOTE

Startup voltage is the voltage drop is needed for the controller to turn ON. It directly

influences the Minimum output current at which the MOSFET turns ON.

Table 2. Recommended MOSFET Examples⁽¹⁾

Voltage Drain

Vgs

Threshold(

Rdson mΩ @

Diode voltage @ 2A at

125C/175C

Part No

(V)

Current at

Package; Footprint

Qual

4.5V

Current 25C

CSD17313Q2

1.8

0.65

SON; 2 x 2

Auto

SQJ886EP

SQ4184EY

Si4122DY

5.5

5.6

2.5

0.5

0.6

0.5

PowerPAK SO-8L; 5 x 6

SO-8; 5 x 6

Auto

23.5

SO-8; 5 x 6

RS1G120MN

RS1G300GN

20.7

2.5

HSOP8; 5 x 6

CSD18501Q5

3.3

2.3

0.53

SON; 5 x 6

Industrial

SQD40N06-

14L

2.5

2.2

0.5

TO-252; 6 x 10

SO-8; 5 x 6

SON;5 x 6

Auto

SQ4850EY

0.55

0.53

Auto

CSD18532Q5

3.3

Industrial

IPG20N04S4

L-07A

7.2

5.7

7.3

2.2

3.3

2.2

0.48

0.55

0.50

PG-TDSON-8-10; 5 x 6

PG-TO263-3; 10 x 15

PG-TO252-3-313; 6 x10

Auto

IPB057N06N

IPD50N04S4

(1) The LM74610-Q1 solution is not limited to the MOSFETs included in this table. It only shows examples of compatible MOSFETs.

LM74610-Q1

www.ti.com.cn

Part No

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

Table 2. Recommended MOSFET Examples⁽¹⁾(continued)

Voltage Drain

Vgs

Threshold(

Rdson mΩ @

Diode voltage @ 2A at

125C/175C

(V)

Current at

Package; Footprint

Qual

4.5V

Current 25C

BUK9Y3R5-

40E

LFPAK56; Power-SO8

(SOT669); 5 x 6

100

3.8

2.1

0.48

0.55

Auto

IRF7478PbF-

SO-8; 5 x 6

Industrial

SQJ422EP

IRL1004

4.3

6.5

2.2

2.5

0.50

0.60

0.65

PowerPAK SO-8L; 5 x 6

TO-220AB

Auto

130

112

AUIRL7736

DirectFET®; 5 x 6

Table 3. Recommended TVS Combination to meet ISO7637 Specifications (Note 4)

TVS +

TVS-

SMA6T33AY

SMA6T30AY

SMA6T28AY

SMBJ14A/ SMA6T15AY

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

9 Power Supply Recommendations

While testing the LM74610-Q1 solution, it is important to use low impedance power supply which allows current

sinking. If the power supply does not allow current sinking, it would prevent the current flow in the reverse

direction in the event of reverse polarity. The MOSFET gate won't get pulled down immediately due to the

absence of reverse current flow.

LM74610-Q1

www.ti.com.cn

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

10 Layout

10.1 Layout Guidelines

•

The VIN terminal is recommended to have a low-ESR ceramic bypass-capacitor. The typical recommended

bypass capacitance is a 10-μF ceramic capacitor with a X5R or X7R dielectric.

•

The VIN terminal must be tied to the source of the MOSFET using a thick trace or polygon.

The Anode pin of the LM74610-Q1 is connected to the Source of the MOSFET for sensing.

The Cathode pin of the LM74610-Q1 is connected to the drain of the MOSFET for sensing.

The high current path of for this solution is through the MOSFET, therefor it is important to use thick traces for

source and drain of the MOSFET.

•

The charge pump capacitor Vcap must be kept away from the MOSFET to lower the thermal effects on the

capacitance value.

The Gate Drive and Gate pull down pins of the LM74610-Q1 must be connected to the MOSFET gate without

using vias.

Obtaining acceptable performance with alternate layout schemes is possible, however this layout has been

shown to produce good results and is intended as a guideline.

LM74610-Q1

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

www.ti.com.cn

10.2 Layout Example

Figure 22. Layout Example

LM74610-Q1

www.ti.com.cn

ZHCSE83A –JULY 2015–REVISED OCTOBER 2015

11 器件和文档支持

11.1 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.2 商标

E2E is a trademark of Texas Instruments.

11.3 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 机械封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不

对本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

重要声明

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PACKAGE OPTION ADDENDUM

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10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

LM74610QDGKRQ1

LM74610QDGKTQ1

ACTIVE

VSSOP

DGK

2500 RoHS & Green

250 RoHS & Green

NIPDAUAG

Level-2-260C-1 YEAR

-40 to 125

ZDSK

NIPDAUAG

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

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lines if the finish value exceeds the maximum column width.

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Addendum-Page 2

PACKAGE MATERIALS INFORMATION

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17-Jul-2020

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

LM74610QDGKRQ1

LM74610QDGKTQ1

VSSOP

DGK

2500

250

330.0

178.0

12.4

13.4

5.3

3.4

1.4

8.0

12.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

17-Jul-2020

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

LM74610QDGKRQ1

LM74610QDGKTQ1

VSSOP

DGK

2500

250

366.0

213.0

364.0

191.0

50.0

Pack Materials-Page 2

重要声明和免责声明

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源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示

担保。

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LM74610-Q1 [TI]

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