TMUX6119 [TI]

0.5pA 导通状态电容、±16.5V、2:1 (SPDT)、单通道精密模拟开关;


型号：	TMUX6119
厂家：	TEXAS INSTRUMENTS
描述：	0.5pA 导通状态电容、±16.5V、2:1 (SPDT)、单通道精密模拟开关开关光电二极管
文件：	总30页 (文件大小：785K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

TMUX6119 ±16.5V 低电容、低泄漏电流、精密 SPDT 开关

1 特性

3 说明

•

宽电源电压范围：±5V 至 ±16.5V（双）或 10V 至

16.5V（单）

TMUX6119 是一款现代互补金属氧化物半导体

(CMOS) 单刀双掷 (SPDT)。该器件在双电源（±5V 至

±16.5V）、单电源（10V 至 16.5V）或非对称电源供

电时均能正常运行。两个数字输入引脚（EN 和 SEL）

均具有兼容晶体管到晶体管逻辑 (TTL) 的阈值，这些

阈值可确保 TTL/CMOS 逻辑兼容性。

•

所有引脚的闩锁性都能达到 100mA，符合 JESD78

II 类 A 级要求

•

低导通电容：6.4pF

低输入泄漏：0.5pA

低电荷注入：0.19pC

轨至轨运行

可以通过控制 EN 引脚来启用或禁用 TMUX6119。当

禁用时，两个通道开关都关闭。当启用时，SEL 引脚

可用于打开通道 A（SA 至 D）或通道 B（SB 至

D）。每个通道在两个方向上都表现得很好，而且具有

可扩展至电源的输入信号范围。TMUX6119 的开关具

有先断后合 (BBM) 开关操作。

低导通电阻：120Ω

转换时间：68ns

先断后合开关操作

EN 引脚和 SEL 引脚可连接至 V_DD（集成下拉电阻

器）

•

逻辑电平：2V 至 V_DD

低电源电流：17µA

TMUX6119 是德州仪器 (TI) 精密开关和多路复用器系

列中的一款产品。TMUX6119 具有非常低的泄漏电流

和电荷注入，因此该器件可用于高精度测量应用。当

开关处于 OFF 位置时，该器件还可通过阻断到达电源

的信号电平来提供出色的隔离能力。电源电流低至

17µA，使得该器件可用于便携式应用。

人体模型 (HBM) ESD 保护：针对所有引脚提供

±2kV 保护

•

行业标准 SOT-23 封装

2 应用

器件信息⁽¹⁾

•

工厂自动化和工业过程控制

器件型号

TMUX6119

封装

SOT-23 (8)

封装尺寸（标称值）

可编程逻辑控制器 (PLC)

模拟输入模块

2.90mm × 1.60mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

自动测试设备 (ATE)

数字万用表

空白

电池监控系统

简化原理图

V_SS

V_DD

Decoder

EN SEL

TMUX6119

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确

性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SCDS384

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

8.2 Functional Block Diagram ....................................... 19

8.3 Feature Description................................................. 19

8.4 Device Functional Modes........................................ 21

Application and Implementation ........................ 22

9.1 Application Information............................................ 22

9.2 Typical Application ................................................. 22

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Thermal Information.................................................. 4

6.4 Recommended Operating Conditions....................... 4

6.5 Electrical Characteristics (Dual Supplies: ±15 V) ..... 5

6.6 Switching Characteristics (Dual Supplies: ±15 V)..... 6

6.7 Electrical Characteristics (Single Supply: 12 V)........ 6

6.8 Switching Characteristics (Single Supply: 12 V)....... 7

6.9 Typical Characteristics.............................................. 9

Parameter Measurement Information ................ 11

7.1 Truth Tables............................................................ 11

Detailed Description ............................................ 12

8.1 Overview ................................................................. 12

10 Power Supply Recommendations ..................... 24

11 Layout................................................................... 25

11.1 Layout Guidelines ................................................. 25

11.2 Layout Example .................................................... 25

12 器件和文档支持 ..................................................... 26

12.1 文档支持................................................................ 26

12.2 接收文档更新通知 ................................................. 26

12.3 社区资源................................................................ 26

12.4 商标....................................................................... 26

12.5 静电放电警告......................................................... 26

12.6 术语表 ................................................................... 26

13 机械、封装和可订购信息....................................... 26

4 修订历史记录

注：之前版本的页码可能与当前版本有所不同。

Changes from Original (September 2018) to Revision A

Page

•

文档状态从预告信息改为生产数据........................................................................................................................................ 1

TMUX6119

www.ti.com.cn

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

5 Pin Configuration and Functions

DCN Package

8-Pin SOT-23

Top View

VDD

GND

VSS

SEL

Not to scale

Pin Functions

TYPE⁽¹⁾

DESCRIPTION

NAME

NO.

Active high digital input. When this pin is low, both switches are turned off. When this pin is high,

the SEL logic input determine which switch is turned on.

Positive power supply. This pin is the most positive power-supply potential. For reliable operation,

connect a decoupling capacitor ranging from 0.1 µF to 10 µF between V_DDand GND.

V_DD

GND

Ground (0 V) reference

Negative power supply. This pin is the most negative power-supply potential. In single-supply

applications, this pin can be connected to ground. For reliable operation, connect a decoupling

capacitor ranging from 0.1 µF to 10 µF between V_SSand GND.

V_SS

I/O

Source pin B. Can be an input or output.

Drain pin. Can be an input or output.

Source pin A. Can be an input or output.

Logic control input.

SEL

(1) I = input, O = output, I/O = input and output, P = power

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

V_DDto V_SS

V_DDto GND

V_SSto GND

V_DIG

Supply voltage

–0.3

–18

0.3

Digital input pin (SEL, EN) voltage

Digital input pin (SEL, EN) current

Analog input pin (Sx) voltage

Analog input pin (Sx) current

Analog output pin (D) voltage

Analog output pin (D) current

Ambient temperature

GND –0.3

–30

V_DD+0.3

I_DIG

V_{ANA_IN}

I_{ANA_IN}

V_{ANA_OUT}

I_{ANA_OUT}

T_A

V_SS–0.3

–30

V_DD+0.3

V_SS–0.3

–30

V_DD+0.3

°C

–55

140

T_J

Junction temperature

150

T_stg

Storage temperature

–65

150

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per

±2000

ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾

V_(ESD)

Electrostatic discharge

Charged device model (CDM), per JEDEC

specification JESD22-C101, all pins⁽²⁾

±500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Thermal Information

TMUX6119

THERMAL METRIC⁽¹⁾

DCN (SOT-23)

8 PINS

180.5

UNIT

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

138.8

90.4

Ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

73.7

Ψ_JB

90.5

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

(1)

V_DDto V_SS

Power supply voltage differential

V_DDto GND

V_SSto GND

Positive power supply voltage (singlle supply, V_SS= 0 V)

Positive power supply voltage (dual supply)

Negative power supply voltage (dual supply)

16.5

–5

–16.5

(1) When V_SS= 0 V, V_DDcan range from 10 V to 36 V.

TMUX6119

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ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

Recommended Operating Conditions (continued)

over operating free-air temperature range (unless otherwise noted)

MIN

V_SS

NOM

MAX

V_DD

UNIT

(2)

V_S

Source pins voltage

V_D

Drain pin voltage

V_DIG

I_CH

T_A

Digital input pin (SEL, EN) voltage

Channel current (T_A= 25°C )

Ambient temperature

–25

–40

℃

125

(2) V_DDand V_SScan be any value as long as 10 V ≤ (V_DD– V_SS) ≤ 36 V.

6.5 Electrical Characteristics (Dual Supplies: ±15 V)

at T_A= 25°C, V_DD= 15 V, and V_SS= -15 V (unless otherwise noted)

PARAMETER

ANALOG SWITCH

TEST CONDITIONS

MIN

TYP

MAX UNIT

V_A

Analog signal range

T_A= –40°C to +125°C

V_SS

V_DD

135

165

210

245

V_S= 0 V, I_S= 1 mA

120

140

R_ON

On-resistance

V_S= ±10 V, I_S= 1 mA

T_A= –40°C to +85°C

T_A= –40°C to +125°C

2.4

On-resistance mismatch

between channels

ΔR_ON

V_S= ±10 V, I_S= 1 mA

T_A= –40°C to +85°C

T_A= –40°C to +125°C

V_S= –10 V, 0 V, +10 V, I_S

= 1 mA

R_{ON_FLAT}

On-resistance flatness

T_A= –40°C to +85°C

T_A= –40°C to +125°C

R_{ON_DRIFT}On-resistance drift

V_S= 0 V

0.5

%/°C

–0.02

–0.12

–1

0.005

0.02

0.05

0.2

Switch state is off, V_S

+10 V/ –10 V, V_D= –10

V/ + 10 V

I_S(OFF)

I_D(OFF)

I_D(ON)

Source off leakage current⁽¹⁾

T_A= –40°C to +85°C

T_A= –40°C to +125°C

–0.02

–0.12

–1

0.005

0.01

0.02

0.05

0.2

Switch state is off, V_S

+10 V/ –10 V, V_D= –10

V/ +10 V

Drain off leakage current⁽¹⁾

Drain on leakage current

T_A= –40°C to +85°C

T_A= –40°C to +125°C

–0.04

–0.25

–1.8

0.04

0.1

Switch state is on, V_S

+10 V/ –10 V, V_D= –10

V/ +10 V

T_A= –40°C to +85°C

T_A= –40°C to +125°C

0.4

DIGITAL INPUT (EN, Ax pins)

V_IH

Logic voltage high

V_IL

Logic voltage low

0.8

R_PD(EN)

Pull-down resistance on EN pin

MΩ

POWER SUPPLY

µA

V_A= 0 V or 3.3 V, V_S= 0

I_DD

V_DDsupply current

T_A= –40°C to +85°C

T_A= –40°C to +125°C

V_A= 0 V or 3.3 V, V_S= 0

I_SS

V_SSsupply current

T_A= –40°C to +85°C

T_A= –40°C to +125°C

(1) When V_Sis positive, V_Dis negative, and vice versa.

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

MAX UNIT

6.6 Switching Characteristics (Dual Supplies: ±15 V)

at T_A= 25°C, V_DD= 15 V, and V_SS= -15 V (unless otherwise noted)⁽¹⁾

PARAMETER

TEST CONDITIONS

MIN

TYP

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

110

t_ON

Enable turn-on time

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

121

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

t_OFF

Enable turn-off time

V_S= ±10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

V_S= 10 V, R_L= 300 Ω , C_L= 35 pF

V_S= 10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

t_TRAN

tBBM

Transition time

V_S= 10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

106

V_S= 10 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

Break-before-make time delay

Q_J

Charge injection

Off-isolation

V_S= 0 V, R_S= 0 Ω , C_L= 1 nF

R_L= 50 Ω , C_L= 5 pF, f = 1 MHz

–0.19

–85

O_ISO

X_TALK

I_L

Channel-to-channel crosstalk

Insertion loss

–93

-7.7

R_L= 10 kΩ , C_L= 5 pF, V_PP= 0.62 V on V_DD, f= 1

MHz

–55

AC Power Supply Rejection

Ratio

ACPSRR

R_L= 10 kΩ , C_L= 5 pF, V_PP= 0.62 V on V_SS, f= 1

MHz

–55

700

MHz

-3dB Bandwidth

R_L= 50 Ω , C_L= 5 pF

Total harmonic distortion +

noise

THD

R_L= 10k Ω , C_L= 5 pF, f= 20Hz to 20kHz

0.08

C_IN

Digital input capacitance

Source off-capacitance

Drain off-capacitance

V_IN= 0 V or V_DD

0.8

1.9

4.3

C_S(OFF)

C_D(OFF)

V_S= 0 V, f = 1 MHz

2.8

4.7

C_S(ON),

C_D(ON)

Source and drain on-

capacitance

V_S= 0 V, f = 1 MHz

6.4

8.1

(1) Specified by design; not subject to production testing.

6.7 Electrical Characteristics (Single Supply: 12 V)

at T_A= 25°C, V_DD= 12 V, and V_SS= 0 V (unless otherwise noted)

PARAMETER

ANALOG SWITCH

TEST CONDITIONS

MIN

TYP

230

MAX UNIT

V_A

Analog signal range

T_A= –40°C to +125°C

V_S= 10 V, I_S= 1 mA

T_A= –40°C to +125°C

V_SS

V_DD

265

355

405

R_ON

On-resistance

T_A= –40°C to +85°C

T_A= –40°C to +125°C

On-resistance mismatch

between channels

ΔR_ON

V_S= 10 V, I_S= 1 mA

V_S= 0 V

T_A= –40°C to +85°C

T_A= –40°C to +125°C

R_{ON_DRIFT}On-resistance drift

0.48

%/°C

TMUX6119

www.ti.com.cn

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

Electrical Characteristics (Single Supply: 12 V) (continued)

at T_A= 25°C, V_DD= 12 V, and V_SS= 0 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

–0.02

–0.08

–0.75

–0.02

–0.08

–0.75

–0.04

–0.16

–1.5

TYP

MAX UNIT

0.005

0.02

0.04

0.13

0.02

0.04

0.13

0.04

0.08

0.25

Switch state is off, V_S

10 V/ 1 V, V_D= 1 V/ 10 V

I_S(OFF)

I_D(OFF)

I_D(ON)

Source off leakage current⁽¹⁾

T_A= –40°C to +85°C

T_A= –40°C to +125°C

0.005

0.01

Switch state is off, V_S

10 V/ 1 V, V_D= 1 V/ 10 V

Drain off leakage current⁽¹⁾

Drain on leakage current

T_A= –40°C to +85°C

T_A= –40°C to +125°C

Switch state is on, V_S

floating, V_D= 1 V/ 10 V

T_A= –40°C to +85°C

T_A= –40°C to +125°C

DIGITAL INPUT (EN, Ax pins)

V_IH

Logic voltage high

V_IL

Logic voltage low

0.8

R_PD(EN)

Pull-down resistance on EN pin

MΩ

POWER SUPPLY

µA

V_A= 0 V or 3.3 V, V_S= 0

I_DD

V_DDsupply current

T_A= –40°C to +85°C

T_A= –40°C to +125°C

(1) When V_Sis positive, V_Dis negative, and vice versa.

6.8 Switching Characteristics (Single Supply: 12 V)

at T_A= 25°C, V_DD= 12 V, and V_SS= 0 V (unless otherwise noted)⁽¹⁾

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

119

t_ON

Enable turn-on time

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

130

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

t_OFF

Enable turn-off time

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+85°C

104

t_TRAN

Transition time

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

112

V_S= 8 V, R_L= 300 Ω , C_L= 35 pF, T_A= –40°C to

+125°C

t_BBM

Break-before-make time delay

Q_J

Charge injection

Off-isolation

V_S= 6 V, R_S= 0 Ω , C_L= 1 nF

R_L= 50 Ω , C_L= 5 pF, f = 1 MHz

0.1

-85

O_ISO

X_TALK

I_L

Channel-to-channel crosstalk

Insertion loss

–100

-15

AC Power Supply Rejection

Ratio

ACPSRR

R_L= 10 kΩ , C_L= 5 pF, V_PP= 0.62 V, f= 1 MHz

–55

C_IN

-3dB Bandwidth

R_L= 50 Ω , C_L= 5 pF

440

MHz

Digital input capacitance

V_IN= 0 V or V_DD

(1) Specified by design; not subject to production testing.

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

MAX UNIT

Switching Characteristics (Single Supply: 12 V) (continued)

at T_A= 25°C, V_DD= 12 V, and V_SS= 0 V (unless otherwise noted)⁽¹⁾

PARAMETER

TEST CONDITIONS

V_S= 6 V, f = 1 MHz

MIN

TYP

C_S(OFF)

C_D(OFF)

C_S(ON)

C_D(ON)

Source off-capacitance

Drain off-capacitance

2.9

5.3

V_S= 6 V, f = 1 MHz

4.9

Source and drain on-

capacitance

V_S= 6 V, f = 1 MHz

7.4

8.9

TMUX6119

www.ti.com.cn

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

6.9 Typical Characteristics

at T_A= 25°C, V_DD= 15 V, and V_SS= –15 V (unless otherwise noted)

250

650

600

550

500

450

400

350

300

250

200

150

100

V_DD= 13.5V

V_SS= -13.5V

200

150

100

V_DD= 12V

V_SS= -12V

V_DD= 10V

V_SS= 0V

V_DD= 12V

V_SS= 0V

V_DD= 16.5V

V_SS= -16.5V

V_DD= 15V

V_SS= -15V

V_DD= 14V

V_SS= 0V

-20

-15

-10

-5

Source or Drain Voltage (V)

D001

D002

Dual Supply Operation (T_A= 25°C)

Single Supply Operation (T_A= 25°C)

图 1. On-Resistance vs Source or Drain Voltage

图 2. On-Resistance vs Source or Drain Voltage

T_A= 125èC

250

200

150

100

700

600

500

400

300

200

100

T_A= 125èC

T_A= 85èC

T_A= 25èC

T_A= -40èC

T_A= 25èC

-15

-10

-5

Source or Drain Voltage (V)

D003

D004

V_DD= 15 V, V_SS= –15 V

V_DD= 12 V, V_SS= 0 V

图 3. On-Resistance vs Source or Drain Voltage

图 4. On-Resistance vs Source or Drain Voltage

400

200

400

200

I_S(OFF)+

I_{D(ON)_10V}

I_{S(OFF)_10V}

I_D(ON)+

I_{D(OFF)_10V}

I_D(OFF)+

-200

-400

-600

-800

-1000

-200

-400

-600

-800

I_S(OFF)-

I_D(OFF)-

I_{S(OFF)_1V}

I_{D(OFF)_1V}

I_{D(ON)_1V}

I_D(ON)-

-50

-25

100

125

150

-50

-25

100

125

150

Ambient Temperature (èC)

D005

D006

V_DD= 15 V, V_SS= –15 V

图 5. . Leakage Current vs Temperature

V_DD= 12 V, V_SS= 0 V

图 6. Leakage Current vs Temperature

TMUX6119

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Typical Characteristics (接下页)

at T_A= 25°C, V_DD= 15 V, and V_SS= –15 V (unless otherwise noted)

V_DD= 10V

V_SS= -10V

_SS= -10V

-2

-4

-6

-8

V_DD= 15V

V_SS= -15V

-1

V_DD= 12V

V_SS= 0V

V_DD= 12V

V_SS= 0V

V_DD= 15V

V_SS= -15V

-2

-15

-10

-5

-15

-10

-5

Source Voltage (V)

Drain Voltage (V)

D007

D008

T_A= 25°C

图 7. Charge Injection vs Source Voltage

图 8. Charge Injection vs Drain Voltage

120

-20

V_DD= 12

V_SS= 0V

t_ON(V_DD= 15V, V_SS= -15V)

t_ON(V_DD= 12V, V_SS= 0V)

-40

-60

V_DD= 15

V_SS= -15V

-80

t_OFF(V_DD= 15V, V_SS= -15V)

-100

t_OFF(V_DD= 12V, V_SS= 0V)

-120

-50

-25

100

125

150

1E+5

1E+6

1E+7

1E+8

5E+8

Ambient Temperature (èC)

Frequency (Hz)

D009

D010

T_A= 25°C

图 9. Enable turn-on and turn-off time

图 10. Off Isolation vs Frequency

-20

100

V_DD= 12

V_SS= 0V

V_DD= 5V

-40

V_SS= -5V

V_DD= 15

V_SS= -15V

-60

-80

0.5

0.2

0.1

-100

-120

-140

V_DD= 15

V_SS= -15V

0.05

0.02

0.01

1E+5

1E+6

1E+7

1E+8

5E+8

1E+1

1E+2

1E+3

1E+4

1E+5

Frequency (Hz)

D011

D012

T_A= 25°C

图 11. Crosstalk vs Frequency

图 12. THD+N vs Frequency

TMUX6119

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Typical Characteristics (接下页)

at T_A= 25°C, V_DD= 15 V, and V_SS= –15 V (unless otherwise noted)

-5

-10

-15

-20

-25

-30

C_D(ON), C_S(ON)

C_D(OFF)

C_S(OFF)

1E+5

1E+6

1E+7

1E+8

1E+9

-15 -12

-9

-6

-3

Frequency(Hz)

Source Voltage (V)

D013

D014

V_DD= 15 V, V_SS= –15 V, T_A= 25°C

图 13. On Response vs Frequency

图 14. Capacitance vs Source Voltage

-20

C_D(ON), C_S(ON)

V_SS

C_D(OFF)

-40

-60

-80

V_DD

C_S(OFF)

-100

-120

-140

1E+5 2E+5 5E+5 1E+6 2E+6 5E+6 1E+7 2E+7 5E+7 1E+8

Source Voltage (V)

Frequency (Hz)

D015

D016

V_DD= 12 V, V_SS= 0 V, T_A= 25°C

图 15. Capacitance vs Source Voltage

V_DD= 15 V, V_SS= –15 V, T_A= 25°C

图 16. ACPSRR vs Frequency

7 Parameter Measurement Information

7.1 Truth Tables

表 1 shows the truth tables for theTMUX6119.

表 1. TMUX6119 Truth Table

STATE

SEL

Switch A (SA

Switch B (SB

to D)

OFF

X⁽¹⁾

OFF

(1) X denotes don't care..

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

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8 Detailed Description

8.1 Overview

The TMUX6119 has a low on and off leakage currents and ultra-low charge injection, allowing the device to be

used in high precision measurement applications. The device also provides excellent isolation capability by

blocking signal levels up to the supplies when the switches are in the OFF position. A low supply current of 17

µA enables usage in portable applications.

8.1.1 On-Resistance

The on-resistance of the TMUX6119 is the ohmic resistance across the source (SA or SB) and drain (D) pins of

the device. The on-resistance varies with input voltage and supply voltage. The symbol R_ONis used to denote

on-resistance. The measurement setup used to measure R_ONis shown in 图 17. Voltage (V) and current (I_CH) are

measured using this setup, and R_ONis computed as shown in 公式 1:

I_CH

V_S

图 17. On-Resistance Measurement Setup

R_ON= V / I_CH

(1)

8.1.2 Off-Leakage Current

There are two types of leakage currents associated with a switch during the off state:

1. Source off-leakage current

2. Drain off-leakage current

Source leakage current is defined as the leakage current flowing into or out of the source pin when the switch is

off. This current is denoted by the symbol I_S(OFF)

Drain leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is off.

This current is denoted by the symbol I_D(OFF)

The setup used to measure both off-leakage currents is shown in 图 18.

I_{s (OFF)}

I_{D (OFF)}

V_S

V_D

图 18. Off-Leakage Measurement Setup

TMUX6119

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Overview (接下页)

8.1.3 On-Leakage Current

On-leakage current is defined as the leakage current that flows into or out of the drain pin when the switch is in

the on state. The source pin is left floating during the measurement. 图 19 shows the circuit used for measuring

the on-leakage current, denoted by I_D(ON)

I_{D (ON)}

NC = No Connection

V_D

图 19. On-Leakage Measurement Setup

8.1.4 Transition Time

Transition time is defined as the time taken by the output of the TMUX6119 to rise or fall to 90% of the transition

after the digital address signal has fallen or risen to 50% of the transition. 图 20 shows the setup used to

measure transition time, denoted by the symbol t_t.

V_DD

V_SS

V_DD

V_SS

3 V

V_S

Output

t_r< 20 ns

t_f< 20 ns

50%

V_IN

0 V

V_S

SEL

300 Ω

35 pF

0.9 V_S

t_TRAN

Output

V_SEL

GND

0.1 V_S

t_TRAN= max ( t_TRAN1, t_TRAN2)

图 20. Transition-Time Measurement Setup

TMUX6119

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Overview (接下页)

8.1.5 Break-Before-Make Delay

Break-before-make delay is a safety feature that prevents two inputs from connecting when the TMUX6119 is

switching. The TMUX6119 output first breaks from the on-state switch before making the connection with the

next on-state switch. The time delay between the break and the make is known as break-before-make delay. 图

21 shows the setup used to measure break-before-make delay, denoted by the symbol t_BBM

V_DD

V_SS

V_DD

V_SS

3 V

V_S

Output

V_IN

0 V

V_S

SEL

300 Ω

35 pF

0.8 V_S

V_SEL

Output

0 V

GND

t_BBM

t_BBM2

t_BBM= min ( t_BBM1, t_BBM2)

图 21. Break-Before-Make Delay Measurement Setup

8.1.6 Enable Turn-On and Enable Turn-Off Time

Enable turn-on time is defined as the time taken by the output of the TMUX6119 to rise to a 90% final value after

the EN signal has risen to a 50% final value. 图 22 shows the setup used to measure turn-on time. Enable turn-

on time is denoted by the symbol t_ON

Enable turn off time is defined as the time taken by the output of the TMUX6119 to fall to a 10% initial value after

the EN signal has fallen to a 50% initial value. 图 22 shows the setup used to measure turn-off time. Enable

Turn-off time is denoted by the symbol t_OFF

V_DD

V_SS

V_DD

V_SS

3 V

V_S

Output

50%

V_IN

0 V

V_S

300 Ω

35 pF

0.9 V_S

t_ON(EN)

t_OFF(EN)

0.1 V_S

Output

V_EN

GND

图 22. Turn-On and Turn-Off Time Measurement Setup

TMUX6119

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ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

Overview (接下页)

8.1.7 Charge Injection

The TMUX6119 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS

and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the

gate signal. The amount of charge injected into the source or drain of the device is known as charge injection,

and is denoted by the symbol Q_INJ. 图 23 and 图 24 shows the setup used to measure charge injection from

source to drain and from drain to source. The charge injection is optimized for the TMUX6119 from the direction

of source to drain.

V_DD

V_SS

V_S

V_DD

V_SS

3 V

0 V

Output

V_IN

R_S

V_S

1 nF

Output

V_S

V_OUT

Q_INJ= C_L

V_OUT

V_EN

GND

图 23. Source to Drain Charge-Injection Measurement Setup

V_DD

V_SS

V_DD

V_SS

V_S

3 V

0 V

Output

V_IN

R_S

V_S

1 nF

SEL

Output

V_S

V_OUT

Q_INJ= C_L

V_OUT

V_SEL

GND

图 24. Drain to Source Charge-Injection Measurement Setup

8.1.8 Off Isolation

Off isolation is defined as the voltage at the drain pin (D) of the TMUX6119 when a 1-V_RMSsignal is applied to

the source pin (SA or SB) of an off-channel. 图 25 shows the setup used to measure off isolation. Use 公式 2 to

compute off isolation.

TMUX6119

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Overview (接下页)

V_DD

V_SS

V_DD

V_SS

Network Analyzer

50 Ω

V_OUT

V_S

50 Ω

SEL

GND

V_SEL

图 25. Off Isolation Measurement Setup

≈

∆

’

◊

V_OUT

V_S

Off Isolation = 20 ∂ Log

(2)

8.1.9 Channel-to-Channel Crosstalk

Channel-to-channel crosstalk is defined as the voltage at the source pin (SA or SB) of an off-channel, when a 1-

V_RMSsignal is applied at the source pin of an on-channel. 图 26 shows the setup used to measure, and 公式 3 is

the equation used to compute, channel-to-channel crosstalk.

V_DD

V_SS

V_DD

V_SS

Network Analyzer

SxA

SxB

V_OUT

50 Ω

SEL

V_S

50 Ω

V_SEL

GND

图 26. Channel-to-Channel Crosstalk Measurement Setup

≈

∆

’

◊

V_OUT

V_S

Channel-to-Channel Crosstalk = 20 ∂ Log

(3)

8.1.10 Bandwidth

Bandwidth is defined as the range of frequencies that are attenuated by < 3 dB when the input is applied to the

source pin of an on-channel, and the output is measured at the drain pin of the TMUX6119. 图 27 shows the

setup used to measure bandwidth of the mux. Use 公式 4 to compute the attenuation.

TMUX6119

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Overview (接下页)

V_DD

V_SS

V_DD

V_SS

Network Analyzer

V_OUT

V_S

50 Ω

SEL

GND

V_SEL

图 27. Bandwidth Measurement Setup

≈

∆

’

◊

V₂

Attenuation = 20 ∂ Log

(4)

8.1.11 THD + Noise

The total harmonic distortion (THD) of a signal is a measurement of the harmonic distortion, and is defined as the

ratio of the sum of the powers of all harmonic components to the power of the fundamental frequency at the mux

output. The on-resistance of the TMUX6119 varies with the amplitude of the input signal and results in distortion

when the drain pin is connected to a low-impedance load. Total harmonic distortion plus noise is denoted as

THD+N. 图 28 shows the setup used to measure THD+N of the TMUX6119.

V_DD

V_SS

V_DD

V_SS

Audio Precision

R_S

V_S

V_OUT

10k Ω

SEL

GND

V_SEL

图 28. THD+N Measurement Setup

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

Overview (接下页)

8.1.12 AC Power Supply Rejection Ratio (AC PSRR)

AC PSRR measures the ability of a device to prevent noise and spurious signals that appear on the supply

voltage pin from coupling to the output of the switch. The DC voltage on the device supply is modulated by a sine

wave of 620 mVPP. The ratio of the amplitude of signal on the output to the amplitude of the modulated signal is

the AC PSRR. 图 29 shows the setup used to measure ACPSRR of the TMUX6119.

V_DD

Network Analyzer

DC Bias

Injector

V_SS

V_DD

V_SS

620 mV_PP

V_IN

V_BIAS

V_OUT

V_SEL

10k Ω

5 pF

SEL

50 Ω

GND

V_BIAS= 0 V

ACPSRR= 20 × Log (V_OUT/ V_IN)

图 29. AC PSRR Measurement Setup

TMUX6119

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ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

8.2 Functional Block Diagram

V_SS

V_DD

Decoder

EN SEL

TMUX6119

8.3 Feature Description

8.3.1 Ultra-low Leakage Current

The TMUX6119 provide extremely low on- and off-leakage currents. The TMUX6119 is capable of switching

signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error

because of the ultralow leakage currents. 图 30 shows typical leakage currents of the TMUX6119 versus

temperature.

400

I_S(OFF)+

I_D(ON)+

200

I_D(OFF)+

-200

I_S(OFF)-

I_D(OFF)-

-400

-600

-800

I_D(ON)-

-1000

-50

-25

100

125

150

Ambient Temperature (èC)

D005

图 30. Leakage Current vs Temperature

8.3.2 Ultra-low Charge Injection

The TMUX6119 is implemented with simple transmission gate topology, as shown in 图 31. Any mismatch in the

stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is

opened or closed.

TMUX6119

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Feature Description (接下页)

OFF ON

C_GDN

C_GSN

C_GSP

C_GDP

OFF ON

图 31. Transmission Gate Topology

The TMUX6119 utilizes special charge-injection cancellation circuitry that reduces the source (SA or SB)-to-drain

(D) charge injection to as low as 0.19 pC at V_S= 0 V, as shown in 图 32.

V_DD= 10V

_SS= -10V

V_DD= 15V

V_SS= -15V

-1

V_DD= 12V

V_SS= 0V

-2

-15

-10

-5

Source Voltage (V)

D007

图 32. Charge Injection vs Source Voltage

The drain (D)-to-source (SA or SB) charge injection becomes important when the device is used as a

demultiplexer (demux), where D becomes the input and Sx becomes the output. 图 33 shows the drain-to-source

charge injection across the full signal range.

TMUX6119

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ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

Feature Description (接下页)

V_DD= 10V

V_SS= -10V

-2

-4

-6

-8

V_DD= 12V

V_SS= 0V

V_DD= 15V

V_SS= -15V

-15

-10

-5

Drain Voltage (V)

D008

图 33. Charge Injection vs Drain Voltage

8.3.3 Bidirectional and Rail-to-Rail Operation

The TMUX6119 conducts equally well from source (SA or SB) to drain (D) or from drain (D) to source (SA or

SB). Each TMUX6119 channel has very similar characteristics in both directions. The valid analog signal for

TMUX6119 ranges from V_SSto V_DD. The input signal to the TMUX6119 swings from V_SSto V_DDwithout any

significant degradation in performance.

8.4 Device Functional Modes

When the EN pin of the TMUX6119 is pulled high, one of the two switches is closed based on the state of the

SEL pin. When the EN pin is pulled low, both switches remain open irrespective of the state of the SEL pin. The

EN pin is weakly pull-down internally through a 6MΩ resistor, thereby setting each channel to the open state if

the EN pin is not actively driven. The SEL pin is also weakly pulled-down through an internal 6Mohm resistor,

allowing channel A (SA to D) to be selected by default when EN pin is driven high. Both the EN pin and the SEL

pin can be connected to V_DD(as high as 16.5 V).

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

9 Application and Implementation

注

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The TMUX6119 offers outstanding input / output leakage current and ultra-low charge injection performance. The

on-capacitance of the TMUX6119 is also very low. These properties make the TMUX6119 ideal for implementing

high precision industrial systems requiring selection of one of two inputs or outputs.

9.2 Typical Application

One application to take advantage of TMUX6119’s precision performance is the implementation of the chopper

amplifier. The chopper amplifier was developed in the 1950s to achieve ultra-low offset voltage and low offset

voltage drift over time and temperature. It also drastically reduces low frequency 1/f (flicker) noise. These

attributes make the chopper amplifier ideal for small signal conditioning. 图 34 illustrates a classic example of a

simple chopper amplifier implemented with two TMUX6119 SPDT switches.

Control

LFP

V_IN

V_OUT

TMUX6119

Wideband

Amplifier

TMUX6119

Integrator

图 34. Example of classic chopper amplifier implemented with two TMUX6119

9.2.1 Design Requirements

The goal of a chopper-amplifier design is to produce extremely high DC precision by continuously self-cancelling

input offset voltage even during variations in temperature, time, common-mode voltage, and power supply

voltage, while reducing low-frequency 1/f (flicker) voltage.

TMUX6119

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Typical Application (接下页)

9.2.2 Detailed Design Procedure

The theory of operation for the chopper amplifier relies on the concept of converting a DC input signal to AC

before feeding it into an AC-coupled wideband amplifier. The conversion utilizes a SPDT switches to “chop” the

input DC signal into an AC voltage. The output of the amplifier is then modulated by another SPDT switch to

convert the signal back to DC. The output of the switch is then low-pass filtered (or integrated) to smooth and

produce the final DC output.

The operation of the chopper amplifier consists of 2 phases, the sampling (S) phase and the auto-zero (Z)

phase. During the auto-zero phase, the switches are toggled to the Z position, and capacitors C1 and C2 are

charged to the amplifier input and output offset voltage, respectively. During the sampling phase, the switches

are toggled to the S position, during which VIN is connected to VOUT through C1, the wideband amplifier, C2,

and the integrator. Input DC voltage is AC-coupled by capacitor C1 and amplified by the wideband amplifier A1.

C2 helps reduce any DC component caused by the amplifier’s input offset voltage, and the integrator helps

smooth out the output signals to produce desired DC voltage output.

Several mechanisms helps reduce overall noise of the chopper-amplifier design. The DC gain, being the product

of the AC stage and the DC gain of the integrator, can easily reach an open-loop gain of 160 dB or higher and

therefore reduce the gain error, V_OUT/ (A1×A2) to almost zero. The offset and drift in the output integrator stage

are nulled by the DC gain of the preceding AC stage. DC drifts in the AC stage are also non-factors because the

amplification stage is AC-coupled. The 1/f noise of the wideband amplifier is modulated to higher frequencies by

the demodulator.

Note that the input signal frequency shall be much less than one-half of the chopping frequency to prevent

aliasing errors in this chopper amplifier implementation. The chopper frequency, in turn, is restricted by the

wideband amplifier’s gain-phase limitations as well as errors induced by switch transition time and charge

injection. The TMUX6119 ‘s switch transition time is only 68 ns (typ) and average charge injection is less than

0.19pC, making it ideal for the chopper amplifier implementation. However, the input signal frequency is still

limited by the amplifier’s performance. If higher sampling frequency is required, a chopper-stabilized amplifier, or

an integrated zero-drift amplifier (such as the OPA2188), can be used to satisfy the requirement.

9.2.3 Application Curve

Fast transition time and small charge injection are two critical parameters for the SPDT switches used in the

chopper amplifier design. 图 35 shows the plot for the charge injection vs. source voltage for the TMUX6119.

V_DD= 10V

_SS= -10V

V_DD= 15V

V_SS= -15V

-1

V_DD= 12V

V_SS= 0V

-2

-15

-10

-5

Source Voltage (V)

D007

图 35. Charge Injection vs Source Voltage

TMUX6119

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

www.ti.com.cn

10 Power Supply Recommendations

The TMUX6119 operates across a wide supply range of ±5 V to ±16.5 V (10 V to 16.5 V in single-supply mode).

They also perform well with unsymmetric supplies such as V_DD= 12 V and V_SS= –5 V. For reliable operation, use

a supply decoupling capacitor ranging between 0.1 µF to 10 µF at both the V_DDand V_SSpins to ground.

The on-resistance of the TMUX6119 varies with supply voltage, as illustrated in 图 36.

250

V_DD= 13.5V

V_SS= -13.5V

200

150

100

V_DD= 12V

V_SS= -12V

V_DD= 16.5V

V_SS= -16.5V

V_DD= 15V

V_SS= -15V

-20

-15

-10

-5

Source or Drain Voltage (V)

D001

图 36. On-Resistance Variation With Supply and Input Voltage

TMUX6119

www.ti.com.cn

ZHCSIT7A –SEPTEMBER 2018–REVISED DECEMBER 2018

11 Layout

11.1 Layout Guidelines

图 37 shows an example of a PCB layout with the TMUX6119.

Some key considerations are:

1. Decouple the V_DDand V_SSpins with a 0.1-µF capacitor, placed as close to the pin as possible. Make sure

that the capacitor voltage rating is sufficient for the V_DDand V_SSsupplies.

2. Keep the input lines as short as possible. In case of the differential signal, make sure the A inputs and B

inputs are as symmetric as possible.

3. Use a solid ground plane to help distribute heat and reduce electromagnetic interference (EMI) noise pickup.

4. Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if

possible, and only make perpendicular crossings when necessary.

11.2 Layout Example

V_DD

SEL

TMUX6119

Via to

ground plane

GND

V_SS

图 37. TMUX6119 Layout Example

TMUX6119

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www.ti.com.cn

12 器件和文档支持

12.1 文档支持

12.1.1 相关文档

•

《OPA2188 0.03μV/°C 漂移，低噪声、轨至轨输出、36V、零漂移运算放大器》(SBOS525)

12.2 接收文档更新通知

要接收文档更新通知，请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产

品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

12.3 社区资源

下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，

并且不一定反映 TI 的观点；请参阅 TI 的《使用条款》。

TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在

e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。

设计支持

TI 参考设计支持可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。

12.4 商标

E2E is a trademark of Texas Instruments.

12.5 静电放电警告

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可

能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可

能会导致器件与其发布的规格不相符。

12.6 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、缩写和定义。

13 机械、封装和可订购信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且

不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。

重要声明和免责声明

TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资

源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示

担保。

所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、

验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用

所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权

许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。

TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约

束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE

邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TMUX6119DCNR

ACTIVE

SOT-23

DCN

3000 RoHS & Green

NIPDAUAG

Level-1-260C-UNLIM

-40 to 125

1QAC

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

重要声明和免责声明

TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资

源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示

担保。

所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、

验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用

所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权

许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。

TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约

束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE

邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122

TMUX6119 [TI]

相关型号：

TMUX6119DCNR

TMUX6121

TMUX6121DGSR

TMUX6122

TMUX6122DGSR

TMUX6123

TMUX6123DGSR

TMUX6136

TMUX6136PWR

TMUX6201

TMUX6201RQXR

TMUX6202