TPS22992RXPR [TI]
具有可调节上升时间和可调节快速输出放电功能的 5.5V、6A、8.7mΩ 负载开关
| RXP | 8 | -40 to 125;
| 型号： | TPS22992RXPR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有可调节上升时间和可调节快速输出放电功能的 5.5V、6A、8.7mΩ 负载开关 | RXP | 8 | -40 to 125 开关 |
| 文件： | 总25页 (文件大小：1547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS22992
ZHCSLK0A –JULY 2021 –REVISED DECEMBER 2021
具有可调上升时间的TPS22992x 5V、8.7mΩ、6A 负载开关
1 特性
3 说明
• 输入电压范围(VIN)：
TPS22992x 产品系列包含两款器件：TPS22992 和
TPS22992S 。每款器件都是采用 8.7mΩ 功率
MOSFET 的单通道负载开关，可在高达 5.5V 和 6A 的
应用中更大限度地提高功率密度。可配置的上升时间为
电源时序提供了灵活性，并更大限度地减小了高电容负
载的浪涌电流。
– TPS22992：0.1V 至5.5V
– TPS22992S：1V 至5.5V
• 偏置电压(VBIAS): 1.5V 至5.5V
• 最大持续电流：6A
• 导通电阻(RON)8.7mΩ（典型值）
• 可调转换率控制
• 可调节快速输出放电(QOD)
• 开漏电源正常(PG) 信号
• 低功耗：
– 导通状态(IQ)：TPS22992 为10µA（典型值）
– 导通状态(IQ)：TPS22992S 为30µA（典型值）
– 关闭状态(ISD)：0.1µA（典型值）
• 短路保护（仅限TPS22992S）
• 热关断
该开关由使能引脚 (ON) 控制，该引脚能够直接连接低
电压 GPIO 信号 (VIH = 0.8V)。TPS22992x 器件具有
可选的 QOD 引脚，用于在开关关闭时快速输出放电，
并且输出的下降时间 (tFALL) 可以通过外部电阻进行调
整。器件上有一个电源正常 (PG) 信号，指示主
MOSFET 何时完全导通，可用于启用下游负载。
两款 TPS22992x 器件都具有热关断功能，以确保在高
温环境下提供保护。TPS22992S 器件还集成了过流保
护功能，可防止在操作或启动期间输出接地短路时损坏
器件。
• ON 引脚智能下拉电阻(RPD,ON
)
– ON ≥VIH (ION)：25nA（典型值）
对于小尺寸应用，TPS22992x 器件采用 1.25mm ×
1.25mm、0.4mm 间距、8 引脚 WQFN 封装。当需要
更宽的引脚间距时，TPS22992 器件还提供 1.5mm ×
1.25mm、0.5mm 间距、8 引脚 WQFN 封装。这两款
器件在自然通风环境下的额定运行温度范围为 –40°C
至+125°C。
– ON ≤VIL (RPD,ON)：500kΩ（典型值）
2 应用
• 数据存储
• PC 和笔记本电脑
• 工业PC
• 光学模块
器件信息
器件型号
封装(1)
封装尺寸（标称值）
1.5mm x 1.25mm
1.25mm x 1.25mm
TPS22992
WQFN - 8 (RXP)
TPS22992S
WQFN - 8 (RXN)
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
TPS22992x 方框图
TPS2299x 电源时序应用
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSFT0
TPS22992
www.ti.com.cn
ZHCSLK0A –JULY 2021 –REVISED DECEMBER 2021
Table of Contents
9.1 Overview...................................................................14
9.2 Functional Block Diagram.........................................14
9.3 Feature Description...................................................15
9.4 Device Functional Modes..........................................16
10 Application and Implementation................................17
10.1 Application Information........................................... 17
10.2 Typical Application.................................................. 17
11 Power Supply Recommendations..............................19
12 Layout...........................................................................20
12.1 Layout Guidelines................................................... 20
12.2 Layout Example...................................................... 20
13 Device and Documentation Support..........................21
13.1 接收文档更新通知................................................... 21
13.2 支持资源..................................................................21
13.3 Trademarks.............................................................21
13.4 Electrostatic Discharge Caution..............................21
13.5 术语表..................................................................... 21
14 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings........................................ 5
7.2 ESD Ratings............................................................... 5
7.3 Recommended Operating Conditions.........................5
7.4 Thermal Information....................................................5
7.5 Electrical Characteristics (VBIAS = 5 V)..................... 6
7.6 Electrical Characteristics (VBIAS = 3.3 V).................. 7
7.7 Electrical Characteristics (VBIAS = 1.5 V).................. 8
7.8 Switching Characteristics (VBIAS = 5 V).................... 8
7.9 Switching Characteristics (VBIAS = 3.3 V)................. 9
7.10 Switching Characteristics (VBIAS = 1.5 V)............. 10
7.11 Typical Characteristics.............................................11
8 Timing Diagram............................................................. 13
9 Detailed Description......................................................14
Information.................................................................... 22
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision * (July 2021) to Revision A (December 2021)
Page
• 将状态从“预告信息”更改为“量产数据”....................................................................................................... 1
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5 Device Comparison Table
QUIESCENT
CURRENT
PACKAGE
PIN PITCH
DEVICE
VIN RANGE
RON AT VBIAS = 5 V
DIMENSIONS
TPS22992RXP
0.1 V to 5.5 V
1 V to 5.5 V
1.5 mm x 1.25 mm
1.25 mm x 1.25 mm
0.5 mm
0.4 mm
8.7 mΩ
8.7 mΩ
10 μA
40 μA
TPS22992SRXN
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6 Pin Configuration and Functions
图6-1. TPS22992x Pinout (Top View Left, Bottom View Right)
表6-1. Pin Functions
PIN
I/O(1)
DESCRIPTION
NAME
NO.
VBIAS
1
I
I
Bias voltage
Input voltage
VIN
PG
2
3
4
5
6
7
8
Open drain power good signal, asserted high when the output is full load ready
O
Device ground
GND
QOD
VOUT
CT
—
—
O
O
I
Quick output discharge pin
Output voltage
Timing pin, can control the slew rate of the output through a capacitor to GND
Enable pin
ON
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
UNIT
VIN
Input Voltage
Bias Voltage
6
6
V
V
V
V
A
VBIAS
VON, VPG, VQOD Control Pin Voltage
6
VCT
CT Pin Voltage
15
6
IMAX
Maximum Current
Internally
Limited
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
150
–65
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0.1
1
NOM
MAX
VBIAS
VBIAS
5.5
UNIT
V
TPS22992 Input Voltage
TPS22992S Input Voltage
Bias Voltage
VIN
V
VBIAS
VIH
1.5
0.8
0
V
ON Pin High Voltage Range
ON Pin Low Voltage Range
5.5
V
VIL
0.35
5.5
V
VPG, VQOD Control Pin Voltage
TA Ambient Temperature
0
V
125
°C
–40
7.4 Thermal Information
TPS22992
THERMAL METRIC (1)
RXP (WQFN)
8 PINS
110.0
RXN (WQFN)
8 PINS
119.4
UNIT
RθJA
ΨJT
YJB
Junction-to-ambient thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
°C/W
°C/W
°C/W
6.8
6.9
36.6
35.2
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics (VBIAS = 5 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C and VIN = 5V.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.25
0.36
uA
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0 V
–40°C to 85°C
–40°C to 125°C
25°C
S
10
30
VBIAS Quiescent Current
(TPS22992)
16
20
IQ,VBIAS
ON > VIH
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
VBIAS Quiescent Current
(TPS22992S)
45
50
IQ,VBIAS
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
ISD,VIN VIN Shutdown Current
ION ON pin leakage
Performance
ON = 0 V
0.1
0.1
ON = VBIAS
25°C
8.7
8.7
8.7
8.7
8.7
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
VIN = 5 V
12
14
–40°C to 85°C
–40°C to 125°C
25°C
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
12
15
–40°C to 85°C
–40°C to 125°C
25°C
RON
On-Resistance
12
14
–40°C to 85°C
–40°C to 125°C
25°C
12
14
–40°C to 85°C
–40°C to 125°C
25°C
12
14
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
25°C
VOL,PG Power Good VOL
IPG = 1 mA
ON < VIL
0.2
500
25
kΩ
RPD,ON Smart Pull Down Resistance
1000
100
–40°C to 125°C
25°C
kΩ
RQOD
Ω
QOD Resistance
RQOD
ON < VIL
–40°C to 125°C
Ω
Protection
ISC,H
ISC,L
tSC
Short Circuit Current Limit (High)
Short Circuit Current Limit (Low)
Short Circuit Response Time
11
1.5
5
A
A
V
V
OUT ≤VIN - 1.5 V
OUT ≤VSC
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
-
VIN = 1 V to 5.5 V
μs
V
VOUT voltage level, rising
VOUT voltage level, falling
0.45
0.35
170
20
VSC
Short Circuit Detection Threshold
Thermal Shutdown
V
TSD
°C
°C
TSDHYS Thermal Shutdown Hysteresis
-
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7.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C and VIN = 3.3V.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.2
uA
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0 V
–40°C to 85°C
–40°C to 125°C
25°C
S
0.27
10
26
VBIAS Quiescent Current
(TPS22992)
15
16
IQ,VBIAS
ON > VIH
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
VBIAS Quiescent Current
(TPS22992S)
42
45
IQ,VBIAS
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
ISD,VIN VIN Shutdown Current
ION ON pin leakage
Performance
ON = 0 V
0.1
0.1
ON = VBIAS
25°C
8.7
8.7
8.7
8.7
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
12
15
–40°C to 85°C
–40°C to 125°C
25°C
12
15
–40°C to 85°C
–40°C to 125°C
25°C
RON
On-Resistance
12
15
–40°C to 85°C
–40°C to 125°C
25°C
12
15
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
25°C
VOL,PG Power Good VOL
IPG = 1 mA
ON < VIL
0.2
500
25
kΩ
kΩ
Ω
RPD,ON Smart Pull Down Resistance
1000
100
–40°C to 125°C
25°C
RQOD
QOD Resistance
ON < VIL
–40°C to 125°C
Ω
Protection
ISC,H
ISC,L
tSC
Short Circuit Current Limit (High)
10
1.5
5
A
A
V
V
OUT ≤VIN - 1.5 V
OUT ≤VSC
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
-
Short Circuit Current Limit (Low)
Short Circuit Response Time
VIN = 1 V to 5.5 V
μs
V
VOUT voltage level, rising
VOUT voltage level, falling
0.45
0.35
170
20
VSC
Short Circuit Detection Threshold
Thermal Shutdown
V
TSD
°C
°C
TSDHYS Thermal Shutdown Hysteresis
-
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7.7 Electrical Characteristics (VBIAS = 1.5 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C and VIN = 1.5V.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIA
0.2
uA
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0 V
–40°C to 85°C
–40°C to 125°C
25°C
S
0.25
8
VBIAS Quiescent Current
(TPS22992)
12
14
IQ,VBIAS
ON > VIH
ON > VIH
–40°C to 85°C
–40°C to 125°C
25°C
22
VBIAS Quiescent Current
(TPS22992S)
29
31
IQ,VBIAS
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
ISD,VIN VIN Shutdown Current
ION ON pin leakage
Performance
ON = 0 V
0.1
0.1
ON = VBIAS
25°C
12.7
11.2
10
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.8 V
21
27
–40°C to 85°C
–40°C to 125°C
25°C
RON
On-Resistance
18
25
–40°C to 85°C
–40°C to 125°C
25°C
16
23
–40°C to 85°C
–40°C to 125°C
–40°C to 125°C
25°C
VOL,PG Power Good VOL
IPG = 1 mA
ON < VIL
0.2
500
25
kΩ
kΩ
Ω
RPD,ON Smart Pull Down Resistance
1000
100
–40°C to 125°C
25°C
RQOD
QOD Resistance
ON < VIL
–40°C to 125°C
Ω
Protection
ISC,H
ISC,L
tSC
Short Circuit Current Limit (High)
10
1.5
5
A
A
V
V
OUT ≤VIN - 1.5 V
OUT ≤VSC
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
–40°C to 125°C
-
Short Circuit Current Limit (Low)
Short Circuit Response Time
VIN = 1 V to 5.5 V
μs
V
VOUT voltage level, rising
VOUT voltage level, falling
0.45
0.35
170
20
VSC
Short Circuit Detection Threshold
Thermal Shutdown
V
TSD
°C
°C
TSDHYS Thermal Shutdown Hysteresis
-
7.8 Switching Characteristics (VBIAS = 5 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5V
tON
Turn ON time
Rise time
1980
1430
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
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7.8 Switching Characteristics (VBIAS = 5 V) (continued)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
554
224
15.3
MAX
UNIT
us
tD
Delay time
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tFALL
tOFF
Fall time
us
Turn OFF time
us
VIN = 3.3V
tON
Turn ON time
Rise time
1480
962
517
218
14.8
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
VIN = 1.8V
tON
Turn ON time
Rise time
1040
553
489
220
15.2
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
862
386
476
221
15.5
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
743
282
462
222
16.4
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
7.9 Switching Characteristics (VBIAS = 3.3 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.3V
tON
Turn ON time
1560
1010
547
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Rise time
Delay time
Fall time
224
Turn OFF time
14.1
VIN = 1.8V
tON
Turn ON time
Rise time
1090
581
505
223
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
Delay time
Fall time
tFALL
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7.9 Switching Characteristics (VBIAS = 3.3 V) (continued)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tOFF
Turn OFF time
15.1
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
VIN = 1.2V
tON
Turn ON time
Rise time
903
406
498
223
15.3
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
774
284
489
222
15.1
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
7.10 Switching Characteristics (VBIAS = 1.5 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 1.5V
tON
Turn ON time
1040
501
542
225
13.4
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Rise time
Delay time
Fall time
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
959
421
538
221
13.9
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
840
314
526
218
14.8
us
us
us
us
us
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
RL = 10 Ω, CL = 10 uF, CT = 1000 pF
tRISE
tD
tFALL
tOFF
Delay time
Fall time
Turn OFF time
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7.11 Typical Characteristics
35
33
31
29
27
25
23
21
19
17
15
20
18
16
14
12
10
8
–40C
25C
85C
125C
6
–40C
25C
4
85C
2
125C
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
VOUT = GND
VIN = VBIAS
VOUT = Open
图7-2. VBIAS Shutdown Current vs Bias Voltage
图7-1. Quiescent Current vs Bias Voltage
18
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
–40C
25C
16
14
12
10
8
85C
125C
6
4
–40C
25C
2
125C
0
1.5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
5.5
Input Voltage (V)
Bias Voltage (V)
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
VIN = VBIAS
IOUT = 200 mA
图7-4. Rise Time vs Input Voltage
图7-3. ON-Resistance vs Bias Voltage
800
750
700
650
600
550
500
450
400
350
300
2500
2250
2000
1750
1500
1250
1000
750
–40C
25C
125C
500
–40C
25C
125C
250
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage (V)
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
图7-6. Turn-On Time vs Input Voltage
图7-5. Delay Time vs Input Voltage
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7.11 Typical Characteristics (continued)
300
290
280
270
260
250
240
230
220
210
200
30
28
26
24
22
20
18
16
14
12
10
–40C
25C
–40C
25C
125C
125C
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage (V)
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
图7-7. Fall Time vs Input Voltage
图7-8. Turn-Off Time vs Input Voltage
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
CT Capacitor (pF)
VBIAS = 5 V
RL = 10 Ω
CL = 10 μF
图7-9. Rise Time vs CT Capacitance
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8 Timing Diagram
图8-1. TPS22992x Timing Parameters
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9 Detailed Description
9.1 Overview
The TPS22992 and TPS22992S devices are both single-channel load switches with an 8.7-mΩ power MOSFET
designed to operate up to 6 A. The voltage range of the TPS22992 device is 0.1 V to 5.5 V, and the voltage
range of the TPS22992S device is 1 V to 5.5 V. A configurable rise time provides flexibility for power sequencing
and minimizes inrush current for high capacitance loads.
The switch is controlled by an enable pin (ON), which is capable of interfacing directly with low voltage GPIO
signals down to its VIH level of 0.8 V. The TPS22992x device has an optional QOD pin for quick output discharge
when switch is turned off, and the fall time (tFALL) of the output can be adjusted through an external resistor.
There is a Power Good (PG) signal on the device that indicates when the main MOSFET is fully turned on and
the on-resistance is at its final value.
Both TPS22992x devices come with thermal shutdown to ensure protection in high temperature environments.
The TPS22992S also integrates overcurrent protection, preventing damage to the device if the output is shorted
to ground during operation or start-up.
9.2 Functional Block Diagram
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9.3 Feature Description
9.3.1 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pulldown is used to
keep the ON pin from floating until the system sequencing is complete. After the ON pin is deliberately driven
high (≥ VIH), the Smart Pulldown is disconnected to prevent unnecessary power loss. See the below table
when the ON Pin Smart Pulldown is active.
ON Pin Voltage
ON Pin Function
Pulldown active
No pulldown
≤VIL
≥VIH
9.3.2 Adjustable Quick Output Discharge
The TPS22992x device includes a QOD feature that can be configured in one of three ways:
• QOD pin shorted to VOUT pin. Using this method, the discharge rate after the switch becomes disabled is
controlled with the value of the internal resistance RQOD. The value of this resistance is listed in the
Electrical Characteristics table.
• QOD pin connected to VOUT pin using an external resistor REXT. After the switch becomes disabled, the
discharge rate is controlled by the value of the total resistance of the QOD.
• QOD pin is unused and left floating. Using this method, there is no quick output discharge functionality, and
the output remains floating after the switch is disabled.
Fall time is dependent on the strength of the configured pulldown resistance on the output.
9.3.3 Adjustable Slew Rate
A capacitor to GND on the CT pin sets the slew rate, and the higher the capacitance the lower the slew rate. The
voltage on the CT pin can be as high as 15 V; therefore, the minimum voltage rating for the CT capacitor must
be 30 V for optimal performance. Rise times for VBIAS = 5 V are shown below.
CT Capacitor
0 pF
VIN = 5 V
147 µs
VIN = 3.3 V
113 µs
VIN = 1.8 V
77 µs
VIN = 1.2 V
59 µs
VIN = 0.8 V
45 µs
220 pF
426 µs
297 µs
179 µs
129 µs
94 µs
1000 pF
4700 pF
1430 µs
6130 µs
962 µs
553 µs
386 µs
282 µs
1180 µs
4090 µs
2330 µs
1640 µs
The following equation can be used to estimate the rise time for different VIN and CT capacitors at VBIAS = 5 V.
tR = VIN × (0.27 × CT + 25.5) + 24.9
(1)
Where:
• tR = Rise time in µs
• VIN = Input voltage in V
• CT = CT capacitance in pF
9.3.4 Power Good (PG) Signal
The TPS22992x device has a Power Good (PG) output signal to indicate the gate of the pass FET is driven high
and the switch is on with the on-resistance close to its final value (full load ready). The signal is an active high
and open drain output which can be connected to a voltage source through an external pullup resistor, RPU. This
voltage source can be VOUT from the TPS22992x device or another external voltage. VBIAS is required for PG
to have a valid output.
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9.3.5 Thermal Shutdown
When the device temperature reaches 170°C (typical), the device shuts itself off to prevent thermal damage.
After the device cools off by about 20°C, it turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
9.3.6 Short Circuit Protection (TPS22992S)
The device limits current to the output in case of output shorts. When a short occurs, the large VIN to VOUT
voltage drop causes the switch to limit the output current (ISC). When the output is below the short circuit
threshold (VSC), a lower limit is used to minimize the power dissipation while the fault is present. The device
continues to limit the current until it reaches its thermal shutdown temperature. At this time, the device turns off
until its temperature has lowered by the thermal hysteresis (20°C typical) before turning on again.
图9-1. Output Short Circuit Current Limiting
图9-2. Output Short Circuit Response
9.4 Device Functional Modes
The below table summarizes the device functional modes.
ON
Fault Condition
VOUT State
Hi-Z
L
N/A
H
None
VIN (through RON)
H
Output short
Thermal shutdown
Current limited (TPS22992S)
Hi-Z
X
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10 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。
10.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
10.2 Typical Application
This typical application demonstrates how the TPS22992x device can be used to limit start-up inrush current.
图10-1. TPS22992x Typical Application
10.2.1 Design Requirements
For this example, the values below are used as the design parameters.
表10-1. Design Parameters
PARAMETER
VBIAS
VALUE
5 V
VIN
5 V
CL
47 uF
Maximum acceptable inrush current
200 mA
10.2.2 Detailed Design Procedure
When the switch is enabled, the output capacitance must be charged up from 0 V to the set value (5 V in this
example). This charge arrives in the form of inrush current. Inrush current can be calculated using the equation
below.
Inrush Current = CL × dVOUT/dt
(2)
Where:
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• CL is the output capacitance.
• dVOUT is the change in VOUT during the ramp up of the output voltage when device is enabled.
• dt is the rise time in VOUT during the ramp up of the output voltage when the device is enabled.
The TPS22992 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during
turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current
equation as shown below.
200 mA = 47 µF × 5 V/dt
dt = 1175 µs
(3)
(4)
To ensure an inrush current of less than 200 mA, a CT value that yields a rise time of more than 1175 µs must be
chosen. See the oscilloscope captures in the Application Performance Plots section for an example of how the
CT capacitor can be used to reduce inrush current.
10.2.3 Application Performance Plots
The below oscilloscope captures show the difference between the inrush current for CT = 0 pF and CT = 1000 pF
settings. The CT = 1000 pF setting is able to keep the inrush current under the required 200 mA, while the CT = 0
pF setting is too fast for this design.
图10-2. Inrush Current for CL = 47 µF with CT = 0
图10-3. Inrush Current for CL = 47 µF with CT =
pF
1000 pF
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11 Power Supply Recommendations
The TPS22992 device is designed to operate with a VIN range of 0.1 V to 5.5 V, and the TPS22992S device
over a range of 1 V to 5.5 V. The VIN power supply must be well regulated and placed as close to the device
terminal as possible. The power supply must be able to withstand all transient load current steps. In most
situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent the supply voltage from dipping when
the switch is turned on. In cases where the power supply is slow to respond to a large transient current or large
load current step, additional bulk capacitance can be required on the input.
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12 Layout
12.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
12.2 Layout Example
图12-1. TPS22992x Layout Example
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13 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
13.1 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
13.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
13.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
13.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.5 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22992RXPR
TPS22992SRXNR
ACTIVE
ACTIVE
WQFN-HR
WQFN-HR
RXP
RXN
8
8
3000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
MC
MB
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Feb-2022
Addendum-Page 2
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