UC1611 [TI]
Quad Schottky Diode Array; QUAD肖特基二极管阵列
| 型号： | UC1611 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Quad Schottky Diode Array |
| 文件： | 总4页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UC1611
UC3611
Quad Schottky Diode Array
FEATURES
DESCRIPTION
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Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual
diodes or as a high-speed, high-current bridge. It is particularly useful on
the outputs of high-speed power MOSFET drivers where Schottky diodes
High Peak Current
are needed to clamp any negative excursions caused by ringing on the
driven line.
Low-Cost MINIDIP Package
Low-Forward Voltage
These diodes are also ideally suited for use as voltage clamps when driv-
ing inductive loads such as relays and solenoids, and to provide a path
for current free-wheeling in motor drive applications.
Parallelable for Lower VF or Higher IF
Fast Recovery Time
The use of Schottky diode technology features high efficiency through
lowered forward voltage drop and decreased reverse recovery time.
Military Temperature Range Available
This single monolithic chip is fabricated in both hermetic CERDIP and
copper-leaded plastic packages. The UC1611 in ceramic is designed for
-55°C to +125°C environments but with reduced peak current capability:
while the UC3611 in plastic has higher current rating over a 0°C to +70°C
ambient temperature range.
CONNECTION DIAGRAM
DIL-8 (TOP VIEW)
N or J Package
SOIC-16 (TOP VIEW)
DW Package
PLCC-20 (TOP VIEW)
Q Package
6/93
UC1611
UC3611
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Diode-to-Diode Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Peak Forward Current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . +300°C
Note: Please consult Packaging Section of Databook for thermal limitations and
considerations of package.
All specifications apply to each individual diode. TJ = +25°C except as noted.
TA = TJ.
ELECTRICAL CHARACTERISTICS:
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Forward Voltage Drop
IF = 100mA
0.3
0.4
0.9
0.01
0.1
20
0.7
1.2
0.1
1.0
V
V
IF = 1A
Leakage Current
VR = 40V
mA
mA
ns
ns
pF
VR = 40V, TJ = +100°C
0.5A Forward to 0.5A Reverse
1A Forward to 1.1V Recovery
VR = 5V
Reverse Recovery
Forward Recovery
Junction Capacitance
40
100
Note: At Forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes.
Reverse Current vs Voltage
Forward Current vs Voltage
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UC1611
UC3611
TYPICAL APPLICATIONS
A. Clamp Diodes - PWMS and Drivers
B. Transformer Coupled Drive Circuits
C. Linear Regulations
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD. • MERRIMACK, NH 03054
TEL. (603) 424-2410 • FAX (603) 424-3460
3
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