2SK3538 [TOSHIBA]
Switching Regulator, DC-DC Converter Applications; 开关稳压器， DC- DC转换器应用
| 型号： | 2SK3538 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching Regulator, DC-DC Converter Applications |
| 文件： | 总6页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3538
Switching Regulator, DC-DC Converter Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
= 75 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 7.0 S (typ.)
fs
Low leakage current: I
= 100 µA (V = 500 V)
DSS
DS
Enhancement-mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
500
500
±30
8
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
I
D
DC
(Note 1)
Drain current
A
I
32
Pulse (Note 1)
DP
Drain power dissipation (Tc = 25°C)
P
65
W
mJ
A
D
AS
AR
Single pulse avalanche energy
E
312
8
(Note 2)
JEDEC
JEITA
―
Avalanche current
I
SC-97
2-9F1B
Repetitive avalanche energy
E
6.5
mJ
AR
TOSHIBA
(Note 3)
Channel temperature
T
150
°C
°C
ch
Weight: 0.74 g (typ.)
Storage temperature range
T
-55 to 150
stg
Thermal Characteristics
4
3
Characteristics
Symbol
Max
1.92
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
1
2
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 90 V, T = 25°C (initial), L = 8.3 mH, I = 8 A, R = 25 W
ch AR G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-14
2SK3538
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
¾
±30
¾
¾
¾
±10
¾
mA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
I = ±10 mA, V = 0 V
G DS
(BR) GSS
I
V
= 500 V, V = 0 V
¾
100
¾
mA
V
DSS
(BR) DSS
DS
S
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
GS
500
2.0
¾
¾
D
V
V
V
V
= 10 V, I = 1 mA
¾
4.0
0.85
¾
V
th
DS (ON)
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 4 A
0.75
7.0
1300
130
400
W
S
D
|Y |
fs
= 10 V, I = 4 A
3.5
¾
D
C
C
¾
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
pF
Reverse transfer capacitance
Output capacitance
¾
¾
DS
rss
C
oss
¾
¾
Rise time
t
¾
¾
¾
¾
¾
26
45
¾
¾
¾
¾
¾
r
I
= 4 A
D
10 V
0 V
V
GS
V
OUT
Turn-on time
Switching time
t
on
Fall time
t
40
f
V
≈ 200 V
DD
Turn-off time
t
Duty ≤ 1%, t = 10 ms
140
30
off
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
I
≈ 400 V, V
= 10 V,
GS
DD
nC
= 8 A
Gate-source charge
Q
Q
¾
¾
17
13
¾
¾
D
gs
Gate-drain (“miller”) charge
gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
¾
Typ.
¾
Max
8
Unit
A
Continuous drain reverse current
I
¾
¾
DR
(Note 1)
(Note 1)
Pulse drain reverse current
I
¾
¾
32
A
DRP
Forward voltage (diode)
Reverse recovery time
V
I
I
= 8 A, V
= 8 A, V
= 0 V
¾
¾
¾
-1.7
V
DSF
DR
DR
GS
GS
t
1200
¾
ns
rr
= 0 V,
dI /dt = 100 A/ms
DR
Reverse recovery charge
Q
rr
¾
10
¾
mC
Marking
※ Lot Number
Type
K3538
Month
Year
(starting from alphabet A)
(last number of the christian era)
※
2
2003-02-14
2SK3538
I
– V
I
– V
D
DS
D
DS
5.5
10
8
20
16
12
8
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
6
6
5.25
15
10
10
5
15
6
4.75
5
4
4.5
4.25
4.5
= 4 V
2
4
V
GS
= 4 V
V
GS
0
0
0
2
4
6
8
10
10
30
0
10
20
30
40
50
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
20
16
12
8
10
8
Common source
= 20 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
6
I
= 8 A
D
4
Tc = -55°C
4
2
4
2
25
6
100
0
0
0
2
4
8
0
4
8
12
16
20
Gate-source voltage
V
(V)
Gate-source voltage
V
D
(V)
GS
GS
R
– I
DS (ON)
ïY ï – I
fs
D
3
1
30
10
Common source
= 20 V
DS
Pulse test
Common source
Tc = 25°C
Pulse test
V
Tc = -55°C
25
100
0.5
0.3
V
= 10, 15 V
5
3
GS
0.1
1
0.05
0.5
0.3
1
3
Drain current
10
0.3
1
3
10
30
Drain current
I
(A)
I
D
(A)
D
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2SK3538
R
– Tc
I
– V
DR DS
DS (ON)
5
4
3
2
1
0
30
10
Common source
Tc = 25°C
Pulse test
Common source
= 10 V
V
GS
Pulse test
3
1
I
= 8 A
D
4
10
2
0.3
0.1
5
3
1
V
GS
= 0, -1 V
-80
-40
0
40
80
120
160
100
150
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
Case temperature Tc (°C)
Drain-source voltage
V
DS
Capacitance – V
V
– Tc
th
DS
5000
5
4
3
2
1
Common source
= 10 V
3000
V
DS
= 1 mA
I
D
Pulse test
1000
C
iss
500
300
C
oss
100
50
30
Common source
C
rss
V
= 0 V
GS
f = 1 MHz
Tc = 25°C
10
0
0.1
1
10
-80
-40
0
40
80
120
160
Drain-source voltage
V
(V)
Case temperature Tc (°C)
DS
P
- Tc
Dynamic input/output characteristics
D
100
80
60
40
20
0
500
20
Common source
Common source
= 10 A
I
= 8 A
D
V
DS
= 1 mA
Tc = 25°C
V
DS
Pulse test
I
D
400
300
200
100
0
16
12
8
Pulse test
V
DD
= 100 V
200
400
4
V
GS
0
0
25
50
75
100
125
0
10
20
30
40
50
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
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2003-02-14
2SK3538
r
th
– t
w
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
0.05
P
DM
0.02
0.01
0.03
0.01
t
T
Single pulse
Duty = t/T
th (ch-c)
R
= 1.92°C/W
0.003
10 m
100 m
1 m
10 m
100 m
1
10
Pulse width
t
w
(S)
Safe operating area
E
– T
AS ch
100
10
500
I
max (pulsed)*
D
400
300
200
100
100 ms*
I
max (continuous)
D
1 ms*
DC operation
Tc = 25°C
1
0
25
50
75
100
125
(°C)
150
0.1
0.01
Channel temperature (initial)
T
ch
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
B
VDSS
V
max
DSS
15 V
1
10
100
1000
I
AR
-15 V
Drain-source voltage
V
(V)
DS
V
V
DD
DS
Test circuit
Waveform
æ
ö
÷
1
2
B
2
×
VDSS
R
V
= 25 W
DD
ç
G
=
×L ×I
Ε
AS
ç
÷
-
B
V
DD
= 90 V, L = 8.3 mH
VDSS
è
ø
5
2003-02-14
2SK3538
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2003-02-14
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