TIM1112-15L [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | TIM1112-15L |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总4页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1112-15L
TECHNICAL DATA
FEATURES
nHIGH POWER
P1dB=42.0dBm at 11.7GHz to 12.7GHz
nHIGH GAIN
nBROAD BAND INTERNALLY MATCHED FET
nHERMETICALLY SEALED PACKAGE
G1dB=6.0dB at 11.7GHz to 12.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB
Compression Point
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 41.0 42.0
¾
VDS= 9V
Power Gain at 1dB
Compression Point
G1dB
dB
5.0
6.0
¾
f
= 11.7 to 12.7GHz
Drain Current
Gain Flatness
IDS1
DG
A
dB
%
4.5
¾
5.5
¾
¾
±0.8
Power Added Efficiency
3rd Order Intermodulation
Distortion
hadd
IM3
29
-45
¾
¾
¾
Two-tone Test
Po=30.0 dBm
dBc
-42
Drain Current
IDS2
A
4.5
5.5
¾
¾
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Channel Temperature Rise
DTch
C
°
100
¾
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
gm
mS
3000
¾
-1.5
¾
¾
IDS= 4.8A
Pinch-off Voltage
VGSoff
VDS= 3V
IDS= 145mA
V
-3.0
-4.5
Saturated Drain Current
I
V
V
= 3V
= 0V
A
10.0 11.5
DSS
DS
GS
Gate-Source Breakdown
Voltage
VGSO
IGS= -145 A
V
-5
m
¾
¾
C/W
°
Thermal Resistance
Rth(c-c)
Channel to Case
2.0
2.5
¾
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product
Rev. Mar. 2006
TIM1112-15L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
UNIT
V
RATING
15
V
DS
Gate-Source Voltage
Drain Current
VGS
IDS
PT
V
-5
A
11.5
Total Power Dissipation (Tc= 25 C)
W
60.0
°
C
Channel Temperature
Storage
Tch
Tstg
°
°
175
C
-65 ~ +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
Gate
Source
Drain
0.6±0.15
17.0±0.3
21.5 MAX.
11.0 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM1112-15L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
44 IDS@4.5A
Pin=36.0 dBm
43
42
41
40
11.7
12.2
12.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
45
44
43
42
41
40
39
38
37
36
freq.=12.2GHz
VDS=9V
50
40
30
20
10
IDS@4.5A
Pout
hadd
30
32
34
36
38
Pin(dBm)
3
TIM1112-15L
Power Dissipation(PT) vs. Case Temperature(Tc)
60
30
0
0
40
80
120
160
200
Tc( C )
°
IM3 vs. Output Power Characteristics
-10
-20
-30
-40
-50
-60
VDS=9V
freq.=12.7GHz
Df=5MHz
24
26
28
Pout(dBm) @Single carrier level
30
32
34
4
相关型号：
TIM1213-10
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power
TOSHIBA
TIM1213-2L
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
TIM1213-30L
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明