TIM1213-2 [TOSHIBA]
TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power;
| 型号： | TIM1213-2 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总5页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TOSHIBA
MICROWAVE POWER GaAs FET
TIM1213-2
Internally Matched Power GaAs FETs (X, Ku-Band)
Features
• High power
- P
= 33.5 dBm at 12.7 GHz to 13.2 GHz
1dB
• High gain
- G = 7.5 dB at 12.7 GHz to 13.2 GHz
1dB
• Broadband internally matched
• Hermetically sealed package
RF Performance Specifications (T = 25°C)
a
Characteristic
Symbol
Condition
Unit
Min.
Typ.
Max
Output Power at 1dB Compression
Point
P
dBm
32.5
33.5
–
1dB
V
= 9V
DS
Power Gain at 1dB Compression
Point
G
dB
6.5
7.5
–
1dB
f = 12.7 - 13.2 GHz
Drain Current
I
A
–
–
–
0.85
24
–
1.1
–
DS
Power Added Efficiency
Channel-Temperature Rise
η
%
°C
add
∆T
V
x I x R
th (c-c)
60
ch
DS
DS
Electrical Characteristics (T = 25°C)
a
Characteristic
Symbol
Condition
Unit
Min.
Typ.
Max.
V
= 3V
= 1.0A
DS
Transconductance
gm
mS
V
–
600
-3.5
–
I
DS
V
= 3V
= 30 mA
DS
Pinch-off Voltage
V
-2
-5
GSoff
I
DS
V
V
= 3V
= 0V
DS
GS
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
I
A
V
–
-5
–
2.0
–
2.6
–
DSS
V
I
= -30 µA
GSO
GS
Channel
to Case
R
°C/W
5
6
th (c-c)
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
MW50210196
1/5
TIM1213-2
Absolute Maximum Ratings (T = 25°C)
a
Characteristic
Symbol
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
V
V
V
15
-5
DS
V
GS
I
A
2.6
D
Total Power Dissipation (T = 25°C)
P
W
˚C
˚C
15
c
T
Channel Temperature
Storage Temperature
T
175
ch
T
-65 ~ 175
stg
Package Outline (2-9D1B)
Handling Precautions for Packaged Type
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
2/5
MW50210196
TOSHIBA CORPORATION
TIM1213-2
RF Performances
TOSHIBA CORPORATION
MW50210196
3/5
TIM1213-2
Power Dissipation vs. Case Temperature
4/5
MW50210196
TOSHIBA CORPORATION
TIM1213-2
TIM1213-2 S-Parameters (Magn. and Angles)
TOSHIBA CORPORATION
MW50210196
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