TIM1213-2L [TOSHIBA]
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power;
| 型号： | TIM1213-2L |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power 局域网 CD 晶体管 |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1213-2L
TECHNICAL DATA
PRELIMINARY
FEATURES
n
n
HIGH POWERT
n
n
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
P1dB=33.5dBm at 12.7GHz to 13.2GHz
HIGH GAIN
G1dB=7.5dB at 12.7GHz to 13.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
¾
P1dB
dBm
32.5 33.5
VDS= 9V
f= 12.7 to 13.2GHz
¾
G1dB
dB
6.5
7.5
¾
¾
IDS1
A
dB
%
0.85
¾
1.1
Gain Flatness
D
G
hadd
±
0.8
¾
¾
Power Added Efficiency
3rd Order Intermodulation
Distortion
24
¾
IM3
dBc
-42
-45
NOTE
¾
¾
Drain Current
IDS2
D
Tch
A
°
C
0.85
¾
1.1
60
Channel Temperature Rise
VDS X IDS X Rth(c-c)
NOTE : Two Tone Test, Po=22dBm (Single Carrier Level)
ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS
SYMBOL
CONDITION
VDS= 3V
IDS= 1.0A
VDS= 3V
IDS= 30mA
VDS= 3V
VGS= 0V
UNIT MIN. TYP. MAX.
¾
-2.0
¾
¾
Transconductance
gm
mS
600
-3.5
2.0
¾
Pinch-off Voltage
VGSoff
IDSS
V
-5.0
2.6
¾
Saturated Drain Current
A
m
Gate-Source Breakdown
Voltage
VGSO
IGS= -30 A
V
-5
°
¾
Thermal Resistance
Rth(c-c) Channel to Case
C/W
5.0
6.0
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
TIM1213-2L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C )
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
UNIT
RATING
VDS
VGS
IDS
V
V
15
Gate-Source Voltage
Drain Current
-5
2.6
A
°
Total Power Dissipation (Tc= 25 C)
PT
W
15
°
°
Channel Temperature
Tch
Tstg
C
C
175
Storage Temperature
-65 to +175
PACKAGE OUTLINE (2-9D1B)
4-R2.4
•
•
‚
Gate
Source
Drain
‚
‚
ƒ
ƒ
0.5±0.15
13.0
±0.3
17.0 MAX
8.5 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260 C.
°
2
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