TIM1112-4UL [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | TIM1112-4UL |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1112-4UL
TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=36.5dBm at 11.7GHz to 12.7GHz
HIGH GAIN
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
G1dB=9.5dB at 11.7GHz to 12.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 35.5 36.5
⎯
G1dB
dB
8.5
9.5
VDS= 10V
IDSset≅1.0A
f= 11.7 to 12.7GHz
⎯
IDS1
ΔG
ηadd
IM3
A
dB
%
1.1
⎯
36
1.6
±0.8
⎯
⎯
⎯
⎯
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
dBc
-42
-45
⎯
Two-Tone Test
Po=24.0 dBm
Drain Current
IDS2
A
1.1
1.6
60
⎯
⎯
(Single Carrier Level)
(VDS x IDS + Pin – P1dB)
x Rth(c-c)
C
°
Channel Temperature Rise
ΔTch
⎯
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Transconductance
gm
VDS= 3V
mS
1200
-2.0
2.2
⎯
-0.5
⎯
⎯
-4.5
⎯
IDS= 1.2A
VDS= 3V
IDS= 40mA
VDS= 3V
VGS= 0V
Pinch-off Voltage
VGSoff
IDSS
V
Saturated Drain Current
A
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -40μA
V
-5
⎯
⎯
C/W
Thermal Resistance
Channel to Case
3.8
4.4
°
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2011
TIM1112-4UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
3.3
Total Power Dissipation (Tc= 25 C)
PT
W
34.1
°
C
Channel Temperature
Storage Temperature
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-9D1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
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