TK8A25DA [TOSHIBA]
MOSFETs Silicon N-Channel MOS (π-MOS); MOSFET的硅N沟道MOS （ π - MOS ）
| 型号： | TK8A25DA |
| 厂家： | 
TOSHIBA |
| 描述： | MOSFETs Silicon N-Channel MOS (π-MOS) |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TK8A25DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK8A25DA
1. Applications
•
Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-220SIS
2011-01-22
Rev.1.0
1
TK8A25DA
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
VDSS
Rating
Unit
V
Drain-source voltage
Gate-source voltage
250
VGSS
±20
Drain current (DC)
Drain current (pulsed)
Power dissipation
(Note 1)
(Note 1)
ID
IDP
PD
7.5
30
A
(Tc = 25)
30
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 2)
(Note 3)
(Note 1)
(Note 1)
EAS
IAR
IDR
IDRP
Tch
45
7.5
7.5
30
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
150
Storage temperature
Tstg
-55 to 150
Isolation voltage (RMS)
Mounting torque
(t = 1.0 s)
VISO(RMS)
2000
0.6
V
TOR
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Rth(ch-c)
Rth(ch-a)
4.16
62.5
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 50 V, Tch = 25 (initial), L = 1.33 mH, RG = 25 Ω, IAR = 7.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2011-01-22
Rev.1.0
2
TK8A25DA
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±1
10
µA
Drain cut-off current
VDS = 250 V, VGS = 0 V
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
250
1.5
V
Vth
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.8 A
3.5
0.5
Drain-source on-resistance
RDS(ON)
0.41
Ω
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
rg
VDS = 100 V, VGS = 0 V, f = 1 MHz
550
5.1
40
Reverse transfer capacitance
Output capacitance
Gate resistance
VDS = OPEN, f = 1 MHz
See Figure 6.2.1.
5.8
28
Ω
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
tr
ns
ton
tf
32
16
toff
66
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
16
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ 200 V, VGS = 10 V, ID = 7.5 A
Gate-source charge 1
Gate-drain charge
Qgs1
Qgd
3.3
5.3
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
VDSF
trr
IDR = 7.5 A, VGS = 0 V
-1.7
V
Reverse recovery time
IDR = 7.5 A, VGS = 0 V
150
ns
-dIDR/dt = 100 A/µs
Reverse recovery charge
Qrr
Irr
0.8
11
µC
Reverse recovery peak current
A
2011-01-22
Rev.1.0
3
TK8A25DA
7. Marking (Note)
Fig. 7.1 Marking
Note: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2011-01-22
Rev.1.0
4
TK8A25DA
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.2 ID - VDS
Fig. 8.4 VDS - VGS
Fig. 8.6 RDS(ON) - ID
2011-01-22
Rev.1.0
5
TK8A25DA
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
Fig. 8.12 Dynamic Input/Output Characteristics
(Guaranteed Maximum)
2011-01-22
Rev.1.0
6
TK8A25DA
Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2011-01-22
Rev.1.0
7
TK8A25DA
Package Dimensions
Unit: mm
Weight: 1.7 g (typ.)
Package Name(s)
JEITA: SC-67
TOSHIBA: 2-10U1S
Nickname: TO-220SIS
2011-01-22
Rev.1.0
8
TK8A25DA
RESTRICTIONS ON PRODUCT USE
•
•
•
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
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are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
2011-01-22
Rev.1.0
9
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