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TPCP8202_1 [TOSHIBA]

Portable Equipment Applications Motor Drive Applications DC_DC Converters; 便携式设备应用电机驱动应用DC_DC转换器
TPCP8202_1
型号： TPCP8202_1
厂家： TOSHIBA    TOSHIBA
描述：

Portable Equipment Applications Motor Drive Applications DC_DC Converters
便携式设备应用电机驱动应用DC_DC转换器

转换器 电机 驱动 便携式 便携式设备
文件： 总7页 (文件大小：244K)
中文：  中文翻译
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TPCP8202  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)  
TPCP8202  
Portable Equipment Applications  
Motor Drive Applications  
DC-DC Converters  
Unit: mm  
0.33±0.05  
A
M
0.05  
5
8
•
•
•
•
•
Lead(Pb)-Free  
Low drain-source ON-resistance: R  
= 19 mΩ (typ.)  
DS(ON)  
High forward transfer admittance: |Y | = 20 S (typ.)  
fs  
0.475  
1
4
B
Low leakage current: I  
= 10 μA (max)(V = 30 V)  
DS  
DSS  
B
M
0.05  
0.65  
2.9±0.1  
A
Enhancement model: V = 0.7 to 1.4V  
th  
0.8±0.05  
(V = 10 V, I = 200 μA)  
DS  
D
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
1.12  
1.12  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
+0.13  
-0.12  
V
30  
30  
V
V
V
DSS  
+0.1  
0.28  
1. Source1  
2. Gate1  
5. Drain2  
-0.11  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
6. Dain2  
7. Drain1  
8. Drain1  
V
±12  
5.5  
22  
GSS  
3. Source2  
4. Gate2  
DC  
Pulse  
(Note 1)  
(Note 1)  
I
D
Drain current  
A
JEDEC  
JEITA  
⎯
I
DP  
Single-device operation  
(Note 3a)  
⎯
P
P
P
P
1.48  
1.23  
0.58  
0.36  
D (1)  
Drain power  
dissipation  
(t = 5 s) (Note 2a)  
TOSHIBA  
2-3V1G  
Single-device value at  
dual operation (Note 3b)  
D (2)  
D (1)  
D (2)  
Weight: 0.017 g (typ.)  
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
Single-device value at  
dual operation (Note 3b)  
(t = 5 s) (Note 2b)  
Circuit Configuration  
Single-pulse avalanche energy  
Avalanche current  
(Note 4)  
E
7.86  
5.5  
mJ  
A
AS  
8
7
5
6
I
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
E
0.12  
mJ  
AR  
(Note 2a, 3b, 5)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: For Notes 1 to 6, see the next page.  
1
2
4
3
Using continuously under heavy loads (e.g. the application of high  
Marking (Note 6)  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
8
7
6
5
8202  
※
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2
3
4
Lot No.  
1
2008-03-21  
TPCP8202  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
84.5  
Unit  
Single-device operation  
(Note 3a)  
R
R
R
R
th (ch-a) (1)  
th (ch-a) (2)  
th (ch-a) (1)  
th (ch-a) (2)  
Thermal resistance,  
channel to ambient  
°C/W  
Single-device value at  
(Note 2a)  
(t = 5 s)  
101.6  
215.5  
347.2  
dual operation (Note 3b)  
Single-device operation  
(Note 3a)  
Thermal resistance,  
channel to ambient  
°C/W  
Single-device value at  
(Note 2b)  
(t = 5 s)  
dual operation (Note 3b)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: (a) Device mounted on a glass-epoxy board (a)  
25.4  
(b) Device mounted on a glass-epoxy board (b)  
FR-4  
FR-4  
25.4 × 25.4 × 0.8  
(Unit: mm)  
25.4 × 25.4 × 0.8  
(Unit: mm)  
(a)  
(b)  
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.  
(During single-device operation, power is applied to one device only.)  
b) The power dissipation and thermal resistance values shown are for a single device.  
(During dual operation, power is applied to both devices evenly.).  
Note 4: V  
= 24 V, T = 25°C (initial), L = 0.2 mH, R = 25 Ω, I  
= 5.5 A  
AR  
DD  
ch  
G
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature.  
Note 6: ● on the lower left of the marking indicates Pin 1.  
* Weekly code (three digits):  
Week of manufacture  
(01 for the first week of the year, continuing up to 52 or 53)  
Year of manufacture  
(The last digit of the year)  
2
2008-03-21  
TPCP8202  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
= ±10 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
V
⎯
⎯
30  
15  
0.7  
⎯
⎯
⎯
10  
⎯
⎯
⎯
⎯
⎯
±10  
10  
⎯
μA  
μA  
GSS  
GS  
DS  
DS  
Drain cutoff current  
I
= 30 V, V  
= 0 V  
= 0 V  
DSS  
GS  
GS  
GS  
V
V
I
I
= 10 mA, V  
= 10 mA, V  
⎯
(BR) DSS  
(BR) DSX  
D
D
Drain-source breakdown voltage  
Gate threshold voltage  
V
V
= -12 V  
⎯
⎯
V
V
V
V
V
V
= 10 V, I = 200 μA  
⎯
1.4  
39  
24  
23  
⎯
th  
DS  
GS  
GS  
GS  
DS  
D
R
= 2.5 V, I = 2.8 A  
29  
DS (ON)  
DS (ON)  
DS (ON)  
D
Drain-source ON-resistance  
mΩ  
S
R
R
= 4.0 V, I = 2.8A  
20  
D
= 4.5 V, I = 2.8A  
19  
D
Forward transfer admittance  
Input capacitance  
|Y |  
fs  
= 10 V, I = 2.8A  
20  
D
C
C
2150  
155  
165  
⎯
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
DS  
rss  
C
⎯
oss  
5V  
I = 2.8 A  
D
Rise time  
t
⎯
⎯
⎯
⎯
⎯
10  
20  
19  
90  
28  
⎯
⎯
⎯
⎯
⎯
r
V
GS  
0 V  
Turn-on time  
Switching time  
t
on  
ns  
Fall time  
t
f
V
DD ≈ 15 V  
Turn-off time  
t
Duty ≤ 1%, t = 10 μs  
off  
w
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
DD ≈ 24 V, V  
= 5 V, I = 5.5 A  
nC  
GS  
D
Gate-source charge1  
Q
⎯
⎯
4
8
⎯
⎯
gs1  
Gate-drain (“Miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Drain reverse current  
Forward voltage (diode)  
Pulse (Note 1)  
I
⎯
⎯
⎯
⎯
⎯
22  
A
V
DRP  
V
I
= 5.5 A, V = 0 V  
GS  
-1.2  
DSF  
DR  
3
2008-03-21  
TPCP8202  
I
– V  
I – V  
D DS  
D
DS  
4.0  
4.0  
5
4
3
2
1
0
10  
8
2.2  
2.3  
Common source  
Ta = 25°C Single Pulse test  
Common source  
Ta = 25°C Single Pulse test  
2.0  
2.1  
2.5  
2.1  
2.2  
1.9  
2.3  
2.0  
1.9  
6
1.8  
1.7  
4
1.8  
1.7  
2
V
= 1.6 V  
GS  
4
V
= 1.6 V  
GS  
0
0
0.4  
0.8  
1.2  
1.6  
2
0
1
2
3
5
Drain−source voltage  
V
(V)  
Drain−source voltage  
V
(V)  
DS  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
2.0  
1.6  
1.2  
0.8  
10  
8
Common source  
= 10 V  
Common source  
Ta = 25°C  
V
DS  
Single Pulse test  
Single Pulse test  
6
4
100°C  
5.5  
1.4  
2.8  
0.4  
0.0  
2
ID= 11A  
25°C  
Ta = −55°C  
0
0
2
4
6
8
10  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Gate−source voltage  
V
(V)  
Gate−source voltage  
V
(V)  
GS  
GS  
|Y | – I  
fs  
R
– I  
DS (ON) D  
D
100  
10  
1
100  
10  
1
Common source  
= 10 V  
Common source  
Ta = 25°C  
V
DS  
Single Pulse test  
Single Pulse test  
V
= 2.5 V  
GS  
Ta = −55°C  
25°C  
4.0  
4.5  
100°C  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
4
2008-03-21  
TPCP8202  
R
– Ta  
I
– V  
DR DS  
DS (ON)  
50  
10  
Common source  
Single Pulse test  
4
5.5 A  
40  
30  
20  
2.8 A  
2
4.0 V  
4.5 V  
V
= 2.5 V  
GS  
1
V
= 0 V  
GS  
I
= 1.4 A  
D
1
I
= 1.4,2.8,5.5 A  
D
10  
0
Common source  
Ta = 25°C  
Single Pulse test  
0.1  
−80  
−40  
0
40  
80  
120  
160  
0
− 0.2  
− 0.4  
− 0.6  
− 0.8  
− 1  
Ambient temperature Ta (°C)  
Drain−source voltage  
V
(V)  
DS  
C – V  
V
– Ta  
th  
DS  
10000  
1000  
100  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
C
iss  
C
oss  
C
rss  
Common source  
V
= 10 V  
DS  
= 0.2 mA  
Common source  
= 0 V  
I
D
V
Pulse test  
GS  
f = 1 MHz  
Ta = 25°C  
−80  
−40  
0
40  
80  
120  
160  
10  
0.1  
Ambient temperature Ta (°C)  
1
10  
100  
Drain−source voltage  
V
(V)  
DS  
Dynamic input/output  
characteristics  
P
– Ta  
D
2.0  
1.5  
35  
30  
7
6
Device mounted on a glass-epoxy board (a)  
(Note 2a)  
(1) Single-device operation  
(2) Single-device value at dual operation  
(Note 3b)  
Device mounted on a glass-epoxy board (b)  
(Note 2b)  
(3) Single-device operation  
(4) Single-device value at dual operation  
(Note 3b)  
Common source  
I = 5.5 A  
D
(Note 3a)  
Ta = 25°C  
Pulse test  
(1)  
(2)  
12V  
V
25  
20  
15  
10  
5
4
3
2
DS  
V
GS  
(Note 3a)  
6V  
t = 5 s  
1.0  
0.5  
V
= 24V  
DD  
(3)  
(4)  
5
0
1
0
36  
0
0
4
8
12  
16  
20  
24  
28  
32  
0
40  
80  
120  
160  
200  
Total gate charge  
Q
g
(nC)  
Ambient temperature Ta (°C)  
5
2008-03-21  
TPCP8202  
r
th  
– t  
w
1000  
100  
10  
(4)  
(3)  
Single pulse  
(2)  
(1)  
Device mounted on a glass-epoxy board (a) (Note 2a)  
(1) Single-device operation  
(2) Single-device value at dual operation  
(Note 3a)  
(Note 3b)  
Device mounted on a glass-epoxy board (b) (Note 2b)  
(3) Single-device operation  
(4) Single-device value at dual operation  
(Note 3a)  
(Note 3b)  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width  
t
(s)  
w
Safe operating area  
100  
I
max (pulse)*  
D
1 ms*  
10  
10 ms*  
1
*: Single nonrepetitive pulse  
Ta = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
V
max  
DSS  
0.1  
0.1  
1
10  
100  
Drain−source voltage  
V
(V)  
DS  
6
2008-03-21  
TPCP8202  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
7
2008-03-21  

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