TPD7000AF [TOSHIBA]
IC 0.02 A 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO24, SSOP-24, MOSFET Driver;
| 型号： | TPD7000AF |
| 厂家： | 
TOSHIBA |
| 描述： | IC 0.02 A 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO24, SSOP-24, MOSFET Driver 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TP D7 0 0 0 AF
●●4-channel Low-Side N-ch Power-MOSFET Driver for ABS Applications
The IC incorporates a circuit which monitors the voltage between the power MOSFET drain and source.
It supports an intelligent function for power MOSFET protection and diagnosis.
(T = 25°C)
Maximum Rating
a
Features
Characteristic
Symbol
Rating
Unit
● Low-side N-channel power MOSFET driver
(input capacitance: 15 nF max)
● Incorporates a power MOSFET overcurrent
protection function.
● Incorporates induction load energy clamping
function.
● INHIBIT option using enable input, open collector
output.
● SSOP 24-pin package for packing in embossed-
tape
DC
V
V
V
V
V
25
DH (1)
DH (2)
DL
Supply Voltage
V
(
)
Pulse
30 1 s
Supply Voltage
Output Voltage
Input Voltage
10
10
V
V
OPOUT
IN
–0.5 to 7
20
V
Output Current
Power Dissipation
I
mA
W
°C
°C
°C
OPOUT
T
= 25°C
P
0.5
a
D
Operating Temperature
Junction Temperature
Storage Temperature
T
T
T
–40 to 110
150
opr
j
–55 to 150
stg
SSOP-24PIN
(T = –40 to 110°C, V
j
= 13 V, V
= 5 ± 0.5 V)
Electrical Characteristics
DH
DL
Characteristic
Symbol
Terminal
Test Condition
Min
Typ.
Max
Unit
V
V
V
V
8
4.5
–
13
18
5.5
5
DH
DL
DH
DL
V
Operating Voltage
—
5
2
I
I
I
I
V
V
= 0 V, V
= 0 V, V
= 13 V, Output Off
= 5 V, Output Off
DH
DL
DH
DL
IN
IN
DH
DL
Current Dissipation
mA
V
–
8
12
1.5
–
V
V
IN / ENB
/ OPIN
When Output Off
When Output On
–
–
–
–
100
IL
IH
IL
Input Voltage
Input Current
3.5
–
I
I
IN / ENB
/ OPIN
V
V
= 0 V
= 5 V
1
IN
IN
µA
V
–
200
IH
High-Level
Output Voltage 1
V
V
V
V
V
= 5 V, I = 0 A, V
< 14 V
–
–
–
V
OH 1
OH 2
GS
GS
IN
O
DH
DH
DH
High-Level
Output Voltage 2
V
V
= 5 V, I = 0 A, V
O
≥ 14 V
12
15
V
IN
V
V
V
V
–
–
–
–
1.0
10
0.5
–
V
V
Low-Level Output Voltage
= 0 V, I = 0 A
O
OL
DS
GS
DS
IN
—
—
V
Detection Voltage
DS
–
Diagnostic Resistance
kΩ
R
DIAG
DIAG
Diagnostic Output
Voltage
V
“L” Level
“H” Level
DIAG
V
= 5 V
= 5 V
–
–
–
–
0.4
10
V
DIAG
DIAG
DL
Diagnostic Output
Current
I
DIAG
V
I
µA
DIAG
V
I
Optional Output Voltage
Optional Off Current
OPOUT
OPOUT
= 10 mA
–
–
30
–
–
–
–
35
–
–
0.4
10
V
µA
V
OPL
OP
V
I
= 5 V
OPH
OPOUT
V
V
Zener Voltage between Drain and Gates
= 5 mA, V
= V –V
40
CLAMP
DS
DS
CLAMP
DS GS
t
t
C
= 3000 pF
100
100
PLH
When On
L
µs
Switching Time
V
GS
(
)
capacitance between V
and GND pins
GS
PLH
When Off
32
Operation
(1)
When normal
(2) At Overcurrent
If the V pin voltage (the voltage between the
DS
power MOS drain and source) is around 1.0 V or
above (V typical detection voltage) while high
● At external power MOS on
When 3.5 V or more is applied to the IN and ENB
DS
pins, the V
pin goes high and 1 mA (Typ.)
GS
level input voltage is applied to the IN and ENB
pins, overcurrent to the external power MOS is
constant current drives the power MOS gate.
A V mask circuit is built in to prevent erroneous
GS
detected and the V
output is a instantly shut
GS
detection of overcurrent in the transient area
before the power MOS comes sufficiency on from
off state. This circuit is set so that overcurrent is
down and latched. Setting the input voltage back
to low level releases the latch.
When the voltage reaches the V
voltage or above, DIAG outputs low level.
detection
DS
not erroneously detected before the V
6.5 V (Typ.).
rises to
GS
DIAG output a voltage that is the inverse of the
state. The power MOS and its load state can
be checked by monitoring the input voltage and the
DIAG output.
(3) At load open
V
As a pull-down resistor is connected to the V
pin, when the load is open the V
low and high level is output to DIAG.
DS
DS
pin is always
DS
(4)
● External power MOS off
OPTION function
When the input voltage of IN or ENB falls to 1.5 V
The OPTION function is controlled by two input
pins: OPIN and ENB. ENB has priority over
OPIN. When high level voltage is input to OPIN or
ENB, the OPOUT pin goes low. This function can
be used as a pre-diver for lamps and mechanical
relays.
or below, the V
pin goes low, the external
GS
power MOS gate is discharged, and the MOSFET
turns off.
The ENB pin has priority over the IN pin. When
ENB is low, the V
GS
pin does not go on even if a
high level input voltage is applied to IN.
(5) At VDL low voltage
TPD7000AF incorporates a low-voltage lock circuit
for locking the V
and DIAG outputs when V
GS
DL
falls. This circuit is designed to operate around
= 2.8 V (Typ.) or lower. When the circuit is in
V
DL
operation, ENB is locked at low level to cut off the
output.
V
GS
Truth table
State
OPIN
ENB
OUTPUT
IN
ENB
H
L
V
DIAG
DS
L
H
L
H
L
L
H
L
L
H
L
H
H
L
HZ
L
Normal
HZ
HZ
H
H
H
H
H
H
H
H
H
H
L
H
L
H
L
L
L
H
L
H
L
L
Overcurrent
L
H
L
L
L
H
L
H
L
L
Load Short Circuit
Power MOS Short Circuit
Load Open
L
H
L
L
H
H
H
H
H
H
H
H
H
L
H
L
L
L
H
L
L
L
H
L
H
L
L
*OPOUT is an NPN open collector.
*HZ: High impedance
*ENB is active high.
L
H
L
*DIAG monitors V
regardless of IN or ENB.
DS
33
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