KBU807GT0G [TSC]

Glass Passivated Bridge Rectifiers;
KBU807GT0G
型号: KBU807GT0G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Glass Passivated Bridge Rectifiers

二极管
文件: 总4页 (文件大小:192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBU801G thru KBU807G  
Taiwan Semiconductor  
CREAT BY ART  
Glass Passivated Bridge Rectifiers  
FEATURES  
- Glass passivated junction  
- Ideal for printed circuit board  
- High case dielectric strength  
- Typical IR less than 0.1μA  
- High surge current capability  
- UL Recognized File # E-326243  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
KBU  
MECHANICAL DATA  
Case: KBU  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Mounting torque: 0.56 Nm max.  
Weight: 7.2 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
PARAMETER  
SYMBOL  
Unit  
801G 802G 803G 804G 805G 806G 807G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
I2t  
200  
166  
A
A2s  
Rating for fusing (t<8.3mS)  
Maximum instantaneous forward voltage (Note 1)  
IF= 4 A  
IF= 8 A  
VF  
1.0  
1.1  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TJ=25oC  
TJ=125oC  
5
500  
IR  
μA  
Typical junction capacitance per leg  
400  
Cj  
pF  
RθJC  
RθJA  
3
18  
OC/W  
Typical thermal resistance  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Measured at 1MHz and applied Reverse Voltage of 4.0V D.C.  
Document Number: DS_D1409012  
Version: H14  
KBU801G thru KBU807G  
Taiwan Semiconductor  
ORDERING INFORMATION  
PART NO.  
PACKING CODE  
PACKING CODE  
SUFFIX  
PACKAGE  
PACKING  
KBU80xG  
(Note 1)  
T0  
G
KBU  
500 / Tray  
Note 1: "x" defines voltage from 50V (KBU801G) to 1000V (KBU807G)  
EXAMPLE  
PACKING CODE  
SUFFIX  
PREFERRED P/N  
PACKING CODE  
DESCRIPTION  
PART NO.  
KBU807G T0  
T0  
T0  
KBU807G  
KBU807G  
KBU807G T0G  
G
Green compound  
RATINGS AND CHARACTERISTICS CURVES  
(TA=25oC unless otherwise noted)  
FIG.1 MAXIMUM DERATING CURVE FOR  
OUTPUT CURRNET  
FIG. 2 MAXIMUM FORWARD SURGE CURRENT  
PER LEG  
200  
175  
150  
125  
100  
75  
8
6
8.3ms Single  
Half Sine Wave  
4
RESISTIVE OR  
INDUCTIVELOAD  
50  
2
WITH HEATSINK  
25  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
1
10  
100  
AMBIENT TEMPERATURE (oC)  
NUMBER OF CYCLES AT 60 Hz  
FIG. 4 TYPICAL FORWARD CHARACTERISTICS  
PER LEG  
FIG. 3 TYPICAL REVERSE CHARACTERISTICS  
PER LEG  
1000  
100  
10  
10  
1
TJ=125oC  
1
TJ=25oC  
0.1  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
INSTANTANEOUS FORWARD VOLTAGE (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (V)  
Document Number: DS_D1409012  
Version: H14  
KBU801G thru KBU807G  
Taiwan Semiconductor  
FIG. 5 TYPICAL JUNCTION CAPACITANCE  
1000  
100  
10  
f=1.0MHz  
Vslg=50mVp-p  
0.1  
1
10  
100  
REVERSE VOLTAGE (V)  
PACKAGE OUTLINE DIMENSIONS  
KBU  
Unit (mm)  
Unit (inch)  
DIM.  
Min  
Max  
19.8  
5.6  
Min  
Max  
0.780  
0.220  
A
B
C
D
E
F
18.8  
4.6  
0.740  
0.181  
8.2 (TYP.)  
0.322 (TYP.)  
1.2  
20.0  
6.8  
1.3  
-
0.047  
0.787  
0.268  
0.894  
0.181  
0.051  
-
7.1  
23.7  
5.0  
0.280  
0.933  
0.197  
G
H
22.7  
4.6  
MARKING DIAGRAM  
P/N  
G
= Specific Device Code  
= Green Compound  
= Date Code  
YWW  
F
= Factory Code  
Document Number: DS_D1409012  
Version: H14  
KBU801G thru KBU807G  
Taiwan Semiconductor  
CREAT BY ART  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied,to  
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or seling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
Document Number: DS_D1409012  
Version: H14  

相关型号:

KBU808

SINGLE PHASE 8.0 AMPS. SILICON BRIDGE RECTIFIERS
GOOD-ARK

KBU808

8 AMP SILICON BRIDGE RECTIFIER
FUJI

KBU808

8.0A BRIDGE RECTIFIER
WTE

KBU808

8.0 Amp SINGLE PHASE SILICON BRIDGE
FCI

KBU808

SILICON BRIDGE RECTIFIERS
HY

KBU808

SINGLE - PHASE BRIDGE RECTIFIERS
SEMTECH

KBU808

SINGLE PHASE SILICON BRIDGE RECTIFIER
DIOTECH

KBU808

BRIDGE RECTIFIERS 3.0 to 6.0 Amps
RFE

KBU808-G

Silicon Bridge Rectifiers
COMCHIP

KBU808-LF

Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE

KBU808G

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS
GOOD-ARK

KBU808G

8.0A GLASS PASSIVATED BRIDGE RECTIFIER
WTE