TSM500P02CX [TSC]

20V P-Channel Power MOSFET;
TSM500P02CX
型号: TSM500P02CX
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

20V P-Channel Power MOSFET

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中文:  中文翻译
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TSM500P02CX  
20V P-Channel Power MOSFET  
SOT-23  
Key Parameter Performance  
Pin Definition:  
1. Gate  
2. Source  
3. Drain  
Parameter  
Value  
-20  
50  
Unit  
VDS  
V
VGS = -4.5V  
VGS = -2.5V  
VGS = -1.8V  
RDS(on) (max)  
65  
mΩ  
85  
Qg  
9.6  
nC  
Block Diagram  
Features  
Fast Switching  
Suited for -1.8V Gate Drive Applications  
Halogen-free  
Ordering Information  
Part No.  
Package  
SOT-23  
Packing  
TSM500P02CX RFG  
3Kpcs / 7Reel  
Note: Gdenotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds  
P-Channel MOSFET  
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)  
Limit  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
V
-20  
±10  
-4.7  
-3  
TC = 25°C  
A
Continuous Drain Current  
ID  
TC = 100°C  
A
Pulsed Drain Current (Note 1)  
IDM  
PD  
A
-18.8  
1.56  
Power Dissipation @ TC = 25°C  
Operating Junction Temperature  
Storage Temperature Range  
W
°C  
°C  
TJ  
150  
-55 to +150  
TSTG  
Thermal Performance  
Parameter  
Symbol  
Limit  
Unit  
Thermal Resistance - Junction to Ambient  
RӨJA  
80  
°C/W  
1/5  
Version: A14  
TSM500P02CX  
20V P-Channel Power MOSFET  
Electrical Specifications (TC = 25°C unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
V
Static  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = -250µA  
VGS = -4.5V, ID = -3A  
VGS = -2.5V, ID = -2A  
VGS = -1.8V, ID = -1A  
VDS = VGS, ID = -250µA  
BVDSS  
-20  
--  
--  
42  
--  
50  
--  
57  
65  
Drain-Source On-State Resistance  
RDS(ON)  
mΩ  
--  
75  
85  
Gate Threshold Voltage  
VGS(TH)  
IDSS  
-0.3  
-0.6  
-0.8  
V
VDS = -20V, VGS = 0V  
VDS = -16V, TJ = 125°C  
VGS = ±10V, VDS = 0V  
VDS = -10V, ID = -3A  
--  
--  
--  
--  
--  
--  
--  
7
-1  
-10  
±100  
--  
Zero Gate Voltage Drain Current  
µA  
Gate Body Leakage  
Forward Transconductance (Note 2)  
IGSS  
gfs  
nA  
S
Dynamic  
Total Gate Charge (Note 2,3)  
Gate-Source Charge (Note 2,3)  
Gate-Drain Charge (Note 2,3)  
Input Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
9.6  
1.6  
2
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
VDS = -10V, ID = -3A,  
VGS = -4.5V  
nC  
pF  
850  
70  
VDS = -10V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
55  
Reverse Transfer Capacitance  
Switching  
Turn-On Delay Time (Note 2,3)  
Turn-On Rise Time (Note 2,3)  
Turn-Off Delay Time (Note 2,3)  
Turn-Off Fall Time (Note 2,3)  
td(on)  
tr  
td(off)  
tf  
6
--  
--  
--  
--  
--  
--  
--  
--  
21.6  
51  
VDD = -10V, ID = -1A,  
ns  
A
VGS = -4.5V, RGEN =25Ω  
13.8  
Source-Drain Diode Ratings and Characteristic  
Maximum Continuous Drain-Source  
-4.7  
IS  
--  
--  
Diode Forward Current  
Maximum Pulse Drain-Source Diode  
Forward Current  
Integral reverse diode in  
the MOSFET  
-18.8  
-1  
ISM  
--  
--  
--  
--  
A
V
Diode-Source Forward Voltage  
Note:  
VGS = 0V, IS = -1A  
VSD  
1.  
2.  
3.  
Pulse width limited by safe operating area  
Pulse test: pulse width 300µs, duty cycle 2%  
Switching time is essentially independent of operating temperature.  
2/5  
Version: A14  
TSM500P02CX  
20V P-Channel Power MOSFET  
Electrical Characteristics Curves  
Continuous Drain Current vs. Tc  
Normalized RDSON vs. TJ  
TC, Case Temperature (°C)  
TJ, Junction Temperature (°C)  
Normalized Vth vs. TJ  
Gate Charge Waveform  
Qg, Gate Charge (nC)  
TJ, Junction Temperature (°C)  
Normalized Transient Impedance  
Maximum Safe Operation Area  
VDS, Drain to Source Voltage (V)  
Square Wave Pulse Duration (s)  
3/5  
Version: A14  
TSM500P02CX  
20V P-Channel Power MOSFET  
SOT-23 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
50 = Device Code  
= Year Code  
M = Month Code for Halogen Free Product  
Y
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
4/5  
Version: A14  
TSM500P02CX  
20V P-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSCs terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
5/5  
Version: A14  

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