FDN359AN [TYSEMI]
SuperSOT -3; SuperSOT -3
| 型号： | FDN359AN |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SuperSOT -3 |
| 文件： | 总2页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
FDN359AN
General Description
Features
This N-Channel Logic Level MOSFET is produced
2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V
RDS(ON) = 0.060 W @ VGS = 4.5 V.
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
Very fast switching.
Low gate charge (5nC typical).
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
SO-8
SOIC-16
SOT-223
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol
VDSS
VGSS
ID
Parameter
Ratings
30
Units
V
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
±20
V
(Note 1a)
2.7
A
15
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
0.46
-55 to 150
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
250
75
°C/W
°C/W
(Note 1)
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Product specification
FDN359AN
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
23
mV/ oC
DBVDSS/DTJ
IDSS
VDS = 24 V, VGS = 0 V
1
µA
µA
nA
nA
TJ = 55°C
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V,VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
1
1.6
-4
3
V
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
mV/ oC
DVGS(th)/DTJ
RDS(ON)
VGS = 10 V, ID = 2.7 A
0.037 0.046
0.055 0.075
0.049 0.06
W
TJ =125°C
VGS = 4.5 V, ID = 2.4 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 2.7 A
ID(ON)
gFS
On-State Drain Current
15
A
S
Forward Transconductance
9.5
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
480
120
45
pF
pF
pF
iss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 5 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 W
6
13
15
4
12
24
27
10
7
ns
ns
ns
ns
Qg
Qgs
Qgd
VDS = 10 V, ID = 2.7 A,
VGS = 5 V
5
nC
nC
nC
1.4
1.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note)
0.42
1.2
A
V
VSD
0.65
Note:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
Typical RqJA using the board layouts shown below on FR-4 PCB in a still air environment :
a. 250oC/W when mounted on
a 0.02 in2 pad of 2oz Cu.
b. 270oC/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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